• 한국응용과학기술학회지
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• 제16권1호
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• pp.33-40
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• 1999

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.120-120
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• 2008

We demonstrate epitaxial growth of ZnO thin films on 4H-SiC(0001) substrates using pulsed laser deposition (PLD). ZnO and SiC have attracted attention for their special material properties as wide band gap semiconductors. Especially, ZnO could be applied to optoelectronic applications such as light emitting devices and photo detectors due to its direct wide bandgap (Eg) of ~3.37eV and large exciton binding energy of ~60meV. SiC shows a good lattice matching to ZnO compared with other commonly used substrates and in this regard SiC is a good candidate as a substrate for ZnO. In this work, ZnO thin films were grown on 4H-SiC(0001) substrates by PLD using an Nd:YAG laser with a 355nm wavelength. The crystalline properties of the films were evaluated by x-ray diffraction (XRD) $\theta-2\theta$, rocking curve and pole figure measurements using a high-resolution diffractometer. The surface morphology of the films was studied by atomic force microscopy (AFM).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• 동굴
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• 제14권15호
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• pp.42-90
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• 1987

제주화산도의 암석학에 대한 암석기재 및 총화학 조성의 63종은 이문원에 의해 보고되고 있다. 총화학조성 데-타는 FORTRAN77의 프로그램에 의해 해석을 하였다. 해석에는 우선 최소자집법에 의해 환산식과 산분도를 검토했다. 다음에 통계적 데-타는 평균치, 최대치, 최소치, 범위, 표준편차, 분산, 표준오차 및 변동계수를 구했다. 표준편차의 큰 단위 물질은 SiO$_2$, MgO 및 FeO이고 작은 단위 물질은 MnO와 P$_2$O$_{5}$이다. 표준오차와 분산은 표준편차와 매우 유사한 조항이 있다. 그렇지만 변동계수는 표준편차와 다르다. 여기에서 큰 단위 변동계수는 $H_2O$$^{-}$ 및 $H_2O$$^{+}$이고, 작은 단위 변동계수는 $Al_2$O$_3$ 및 SiO$_2$ 이다. 상관계수의 계산은 정과 부의 상관성을 SiO$_2$, $Al_2$O$_3$ 및 TiO$_2$에 대해서 다른 조성과의 관계를 계산적으로 구할수 있다.

• 한국세라믹학회지
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• 제27권2호
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• pp.219-225
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• 1990

Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.349-352
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• 2012

ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.

• Korean Chemical Engineering Research
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• 제59권2호
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• pp.281-295
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• 2021

Si/(Si + Al) 몰비를 30 몰%까지 변화시켜 제조한 SiO2-Al2O3 복합 산화물(SA) 상에 니켈을 함침법으로 제조한 촉매 상에서 에탄올의 아민화반응에 미치는 영향을 연구하였다. 제조된 촉매의 물리·화학적 특성을 알아보기 위하여 X-선 회절분석(XRD), N2 흡착분석, 이소프로판올 승온탈착(IPA-TPD), 에탄올 승온탈착(EtOH-TPD), 수소 승온환원(H2-TPR), H2 화학흡착, 투과전자현미경(TEM) 분석을 수행하였다. SA 복합 산화물 상에서 Si/(Si + Al) = 30 몰%가 될 때까지 지속적으로 산점이 증가하였다. 담지된 Ni 금속의 분산도, 비표면적 및 산 특성 등이 촉매 반응활성에 복합적으로 영향을 미쳤다. 산점 증가와 니켈 산화물의 낮은 환원 온도는 아세토니트릴 생성에 유리하게 작용하는 것으로 사료된다. 에탄올의 전환율 측면에서는 10 wt% Ni이 담지된 Si/(Si + Al) = 10 몰% 촉매가 가장 높은 전환율을 보였으며 이를 기준으로 화산형 형태를 나타냈고, Ni 금속 분산도와 경향이 일치했다.

• 한국분말재료학회지
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• 제28권1호
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• pp.51-58
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• 2021

The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

• 천문학회보
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• 제38권2호
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• pp.77.2-77.2
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• 2013

We present the interim results of simultaneous time monitoring observations of $^{28}SiO$ v = 1, 2, J = 1-0, $^{29}SiO$ v = 0, J = 1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward 10 known water fountain sources at a post-AGB stage. The observations have been carried out from 2009 June to 2013 September using the 21m single dish radio telescopes of the Korean VLBI Network. From six sources, we detected well separated red- and blue-shifted $H_2O$ maser features with large velocity ranges more than 100 km $s^{-1}$. From four sources, we detected red- and/or blue-shifted $H_2O$ maser features depended on observational epochs. However, we could not detected SiO maser emission from any sources and any epochs. For a representative water fountain source W43A, we obtained $H_2O$ maser spectra at 17 epochs which show a clear bipolar and discontinuous mass ejections. They also showed a periodic change between red-shifted and blue-shifted peaks. However, we need a more regular and short-time interval monitoring observations in order to fix the period and peak intensity variation interval.

• Nuclear Engineering and Technology
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• 제33권4호
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• pp.386-396
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• 2001

Mixtures Of AUC-UO$_2$and Gd$_2$O$_3$ Powders doped With Cr$_2$O$_3$ or Cr$_2$O$_3$-SiO$_2$ were Pressed and sintered at 1730 t in hydrogen gas witk various water-vapor contents. The density of UO$_2$- 6wt% Gd$_2$O$_3$ pellets can be increased from 91% TD to 94.5% TD in 1 vol% $H_2O$-H$_2$ gases by the addition of 0.02wt% Cr$_2$O$_3$-(0.01~0.04) wt% SiO$_2$. The magnitude of density increase is much larger in (1~3 vol%) $H_2O$-H$_2$ gases than in 0.05 vol% $H_2O$-H$_2$ gas. The densification of U0$_2$- Gd$_2$O$_3$ compact is significantly delayed in the temperature range between 1300 and 1500 t , but that of compacts with Cr$_2$O$_3$-SiO$_2$ is not. The role of Cr$_2$O$_3$ and SiO$_2$ in densification is discussed.