• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.51.1-51.1
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• 2010

We present the interim results of simultaneous observations of SiO and H2O masers toward 401 known stellar SiO and/or H2O maser sources (166 both SiO and H2O maser sources, 83 only SiO maser sources, and 152 only H2O maser sources) using KVN_Yonsei telescope. The results of 166 known SiO/H2O maser sources will be presented by Kim et al. and the results of 83 only SiO maser sources and 152 only H2O maser sources presented here. Both SiO and H2O maser emission were detected from 30 sources giving a detection rate of 36 % toward known 83 only SiO maser sources, while they were detected from 66 sources giving a detection rate of 43 % toward known 152 only H2O maser sources at one epoch observation. Only SiO masers were detected from 42 sources toward 83 only SiO sources, while they were detected from 28 sources toward 152 only H2O sources. Characteristics of these observed sources in the IRAS two-color diagram is investigated including mutual relations between SiO and H2O maser emission. In addition, these results will be useful for statistical study of late-type stars and future VLBI observations.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.51.2-51.2
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• 2010

We have carried out an extensive statistical analysis based on the results of simultaneous observations of SiO and $H_2O$ masers toward 166 known SiO and $H_2O$ maser sources using KVN_Yonsei radio telescope (Kim et al.2010, ApJS submitted). We investigate the distributions of the mean velocities and the intensity ratios between SiO and $H_2O$ maser emission including those between SiO v=1 and v=2,J=1-0 transitions according to type of evolved stars. We also investigate mutual relations between SiO and $H_2O$ maser properties(total flux densities and velocity structures etc.) according to stellar pulsation phases. Most of SiO masers appear around the stellar velocity (80 % within ${\pm}5km\;s^{-1}$), while $H_2O$ masers show a different characteristic compared with SiO masers (69% within ${\pm}5km\;s^{-1}$). In addition, we investigate a correlation between $SiO/H_2O$ maser emission and AKARIFIS flux density as well as the AKARI color characteristics of SiO and $H_2O$ observational results in the AKARIFIS two-color diagram.

• Journal of IKEEE
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• v.25 no.1
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• pp.1-9
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• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.291-299
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• 1993

Hydrothermal synthesis of 1.13nm tobermorite was performed to obtain the mixing ratio of raw materials, the optimum reaction time and the effect of aluminum in two systems, $CaO-SiO_2-H_2O$ and cement sludge-$SiO_2-H_2O$. 1.13nm tobermorite($5CaO{\cdot}6SiO_2{\cdot}5H_2O:C_5S_6H_5$) was synthesized excellently from $CaO-SiO_2-H_2O$ system on each mole ratio (0.4, 0.8) of $CaO/SiO_2$ at $180^{\circ}C$. But a tobermorite crystals had a sign of crystal conversion after 6 hours of reaction times in the case of $CaO/SiO_2=0.4$ and 4 hours of reaction time in the case of $CaO/SiO_2=0.8$. However, a tobermorite synthesized from cement sludge wastes did not show the crystal conversion on each mole ratio(0.4, 0.8) of $CaO/SiO_2$ within 10 hours of reaction times. It is considered that aluminum ions dissolved from cement sludge wastes retarded the recrystallization of tobermorite. This role of aluminum ion was confirmed in $CaO-SiO_2-H_2O+Al$ powder system. According as added amount of Al powder was increased from 0.8% to 3.0%, the crystal had a highly flatter and larger shape. Recrvstallization was not detected within the same reaction times when aluminum was added.

• Journal of the Korean Chemical Society
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• v.67 no.5
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• pp.333-338
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• 2023

In this study, the H₂O reaction with SiO clusters was investigated using ab initio Monte Carlo simulations and density functional theory calculations. Three chemistry models, PBE1/DGDZVP (Model 1), PBE1/DGDZVP (Si atom), and aug-cc-pVDZ (O and H atoms), (Model 2) and PBE1/aug-cc-pVDZ (Model 3), were used. The average bond lengths, as well as the relative and reaction energies, were calculated using Models 1, 2, and 3. The average bond lengths of Si-O and O-H are 1.67-1.75 Å and 0.96-0.97 Å, respectively, using Models 1, 2, and 3. The most stable structures were formed by the H transfer from an H₂O molecule except for Si₃O₃-H₂O-1 cluster. The Si₃O₃ cluster with H₂O exhibited the lowest reaction energy. In addition, the Bader charge distributions of the Si_nO_n and (SiO)_n-H₂O clusters with n = 1-7 were calculated using Model 1. We determined that the reaction sites between H₂O and the SiO clusters possessed the highest fraction of electrons.