• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1009-1012
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• 2008

We have succeeded in producing the world $1^{st}$ TFT LCD panel adapting the data line sharing method. In the data line sharing structure, two neighboring pixels share one data line. We also adapted time shared data driving with a-Si TFT based circuit integration technology of LG Display's own. By using these technologies, we can reduce the number of source driver ICs by half, compared to that of the existing gate driver integrated TFT LCD panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.793-796
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• 2005

A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.272-278
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• 2008

This paper investigated the a-si:H gate driver with the stepwise gate signal. In 1-chip type mobile LCD application the stepwise gate signal for low power consumption can be used by adding simple switching circuit. The power consumption of the a-Si:H gate driver can be decreased by employing the stepwise gate signal in the conventional circuit. In conventional one, the effect of stepwise gate signal can decrease slew rate and increase the fluctuation of gate-off state voltage, In order to increase the slew rate and decrease the gate off state fluctuation, we proposed a new a-Si:H TFT gate driver circuit. The simulation data of the new circuit show that the slew rate and the gate-off state fluctuation are improved, so the circuit can work reliably.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.783-786
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• 2004

We have developed a 470 x 235ppi poly-Si TFT LCD with a novel pixel arrangement, called HDDP (Horizontally Double-Density Pixels), for high-resolution 2D and 3D autostereoscopic display. 3D image quality is especially high in a lenticular-lens-equipped 3D mode because both horizontal resolution and vertical resolution are high, and because these resolutions are equal. 3D and 2D images can be displayed simultaneously in the same picture. In addition, 3D images can be displayed anywhere and 2D characters can be made to appear at different depths with perfect legibility. No switching of 2D/3D modes is necessary, and the design's thin and uncomplicated structure makes it especially suitable for mobile terminals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1114-1119
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• 2004

The photodepositioned tungsten film by laser CVD has been carried out the taping test with scotch tape over 10 times. As a result, it exhibited strong adhesion to the under-film such as ITO and SiNx patterned on the LCD substrate. However, it was seriously attacked by alkaline solution used for removing polyimide. And a thickness of laser CVD tungsten film had a close relation to a speed of laser scanning. Also we have improved the success rate of a laser CVD repair with making two pairs of contact hole structure and decreasing laser scanning speed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.552-555
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• 2002

In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.700-702
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• 2005

A 5.0-inch transmissive type plastic TFT arrays were successfully fabricated on a plastic substrate at the resolution of $400{\times}3{\times}300$ lines (100ppi). All of the TFT processes were carried out below $150^{\circ}C$ on PES plastic films. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 1um) without their failures, it is necessary to solve the critical problem related to the internal compressive stress (some GPa) leading to delamination at a threshold thickness value of the films. The Griffith's theory explains the failure process by looking at the excess of elastic energy inside the film, which overcomes the cohesive energy between film and substrate. To increase the above mentioned threshold thickness value there are two possibilities: (i) the improvement of the interface adhesion (for example, through surface micro-roughening and/or surface activation), and (ii) the reduction of the internal stress. In this work, reducing a-Si layer film thickness and optimizing a barrier SiNx layer have produced stable CVD films at 150oC, over PES substrates

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.119-123
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• 2004

This paper describes low temperature poly-Si (LTPS) TFT system on glass (SOG) technology developed in NEC. High resolution SOG-LCDs such as a 230 ppi reflective type LCD, a 2.5", 333 ppi 2D/3D autostereoscopic LCD, and a 2.1" single voltage driven full integration LCD for mobile applications and a 0.9", XGA light valve for projectors are reviewed from the perspective of the high resolution technologies

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.533-536
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• 2006

VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.