• Title/Summary/Keyword: a-Se:As

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A study on point defect for thermal annealed CuGaSe2 single crystal thin film (열처리된 CuGaSe2 단결정 박막의 점결함연구)

  • 이상열;홍광준
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.154-154
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    • 2003
  • A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

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A Study on Automatic Security Diagnostic Evaluation System for Security Assurance (보안 안전성을 위한 자동화 보안진단평가 시스템에 관한 연구)

  • Eom, Jung Ho;Park, Seon Ho;Chung, Tai M.
    • Journal of Korea Society of Digital Industry and Information Management
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    • v.5 no.4
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    • pp.109-116
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    • 2009
  • In the paper, we designed an automatic security diagnostic evaluation System(SeDES) based on a security diagnostic evaluation model(SeDEM) for an organization's security assurance. The SeDEM evaluates a security level of an organization quantitatively by a security evaluation formula which is composed of security variables and security index as applying the statistical CAEL model for evaluate risk level of banks. The SeDES has a good expandability as changing security variables according to an organization scale, characteristics and so on. And it also has a excellent usage because it inputs only numeric data got from statistical technique to security index. We can understand more a security level correctly than the existent risk assessment system because it is possible to assess quantitatively with an security grade as well as score. analysis.

Effect of thermal annealing for $ZnIn_2Se_4$ thin films obtained by photoluminescience measurement (광발광 측정으로부터 얻어진 $ZnIn_2Se_4$ 박막의 열처리 효과)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.120-121
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    • 2009
  • Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

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An Efficient Inter-Cell Interference Mitigation Scheme for Proximity Service in Cellular Networks (셀룰러 망에서 Proximity Service를 위한 효율적인 셀 간 간섭 완화 방안)

  • Kim, Cha-Ju;Min, Sang-Won
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.17 no.1
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    • pp.100-113
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    • 2018
  • The Proximity Service, which is one of the most popular network capacity improvement methods, uses the frequency reuse in order to increase the frequency efficiency. As a result, inter-cell interference between cellular and proximity service users occurs at a cell edge. In this paper, we proposed a mitigation scheme for inter-cell interference, where we suggested a new function of and eNB with ProSe function exchanging information about ProSe parameters and ProSe user equipment with neighboring cells via the X2 interface. As the first step, the resource which did not cause the inter-cell interference problem were pre-allocated through the frequency sensing in the ProSe direct discovery. As the next step, the inter-cell interference problem was solved by reallocating appropriate resources based on the ProSe application code, the ProSe application QoS, the ProSe application ID and validity timer in ProSe direct communication.

Biological Aspects of Selenium in Farm Animals

  • Kim, Y.Y.;Mahan, D.C.
    • Asian-Australasian Journal of Animal Sciences
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    • v.16 no.3
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    • pp.435-444
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    • 2003
  • In 1957, Schwarz and Foltz discovered that selenium (Se) was an essential trace mineral and nutritionists then started extensive studies to figure out the metabolic function of this element which has been called as toxic mineral. The discovery that glutathione peroxidase (GSH-Px) contained Se demonstrated a biochemical role for Se as an essential trace element. The major physiological function of Se containing GSH-Px is thought to maintain low levels of $H_2O_2$ and other hydroperoxides in the cell to prevent tissues from peroxidation damages. It is known that the GSH-Px activity is increased when animals were fed high dietary levels of Se. Chemical properties of Se have much in common with sulfur (S) therefore Se would follow the sulfur pathways in its metabolism in animal body. Two sources of Se are available for supplementation of Se in animal feed. Inorganic Se can also exist in selenide (-2), elemental (0), selenite (+4) and selenate (+6) oxidation state with other minerals. When sulfur in S containing amino acids is replaced by Se, organic Se can be made and named "eleno"prior to the name of S containing amino acid, i.e. selenomethionine. Selenium deficiency affects humans as well as animals and dysfunctions such as exudative diathesis, retained placenta, mastitis, liver necrosis, Keshan disease, numerous diseases and cancer. From several centuries ago, Se toxicity was recognized in various animal species and much of the current toxic Se levels has been established largely based upon the controlled toxicity studies used inorganic Se. Toxic effects of Se in animal result in reduced feed intake, growth retardation, ataxia, diarrhea, alopecia and sloughing of hooves. However, several experiments demonstrated that Se deficiencies or toxicities were varied by dietary Se levels and sources. Recent studies demonstrated that the incidence of colorectal and prostate cancer was reduced by approximately 50% when humans consumed 200 ${\mu}g$ of Se daily.

The Fabrication of the Cu(In,Ga)Se2 Absorber Layer Using Binary Precursor Films Deposited by Chemical Vapor Deposition (화학기상증착된 이원계 화합물 프리커서를 이용한 Cu(In,Ga)Se2 흡수층의 제조)

  • Lee, Gyeong A;Kim, A Hyun;Cho, Sung Wook;Lee, Kang-Yong;Jeon, Chan-Wook
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.137-144
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    • 2021
  • In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se2 (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe2 and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of JSC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of VOC, JSC, and FF could be greatly improved.

A Study on ZnSe/GaAs Heterojunction Solar Cells Grown by MBE (MBE법으로 제작한 ZnSe/GaAs 이종접합 태양전지에 관한 연구)

  • Lee, Hong-Chan;Lee, Sang-Tae;Oh, Jin-Suck;Kim, Yoon-Sik;Chang, Ji-Ho
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2006.06a
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    • pp.289-290
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    • 2006
  • We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

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Study on the Effect of a New Antiseptic Preparation ″Swi-Se-Yo″ on the Carry-Over Cocoons in Silk Reeling Process (새로 개발한 조월견방부제 ″쉬세요(Swi-Se-Yo)″의 효과에 관하여)

  • 이장낙;정태암;송기언;하정근
    • Journal of Sericultural and Entomological Science
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    • v.18 no.2
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    • pp.107-110
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    • 1976
  • In silk reeling process the carry-over cocoons must be submerged in the reeling baths filled with reeling water and left until reopening the operation. Under the detention the carry-over cocoons are apt to decay without any antiseptic treatment. Thus an useful antiseptic for the cocoons is urgently needed, and various antseptic agents have been tested for their applicability to the process. However, such an useful agent has not been developed yet. Formalin has been the only chemical used for antisepticizing carry-over cocoons, although it has many defects as the antiseptic for the cocoons. In these circumstances, recently we newly prepared an antiseptic useful for preventing the carryover cocoons from decaying. We named the new antiseptic preparation "Swi-Se-Yo." The Korean term "Swi-Se-Yo" literally means "please take a rest". Through a series of experiments with Swi-Se-Yo we obtained the following results: 1) Swi-Se-Yo, in 0.05% aqueous solution, exerted a good antiseptic effect on the boiled Cocoons submerged in the reeling baths and the effect lasted for 45 hours. The duration of the effect is about two times longer than that of Formalin. 2) The percentage of cocoon reel ability of the carry-over cocoons treated with Swi-Se-Yo was 6% higher than that of Formalin and was equal to that of flowing cold water. 3) The percentage of raw silk yield of the carry-over cocoons treated with Swi-Se-Yo was almost equal to that of Formalin and to that of flowing cold water. 4) The quality of raw silk of the carry-over cocoons treated with Swi-Se-Yo is the same as that of flowing cold water. Besides the above favourable results, Swi-Se-Yo has many advantages as an antiseptic. Chemically it is very stable. Its antimicrobial action is very strong and the spectrum is very broad. It can be available in water-soluble powder and in small bulk. And it is not harmful to human and domestic animals. Considering these profitable properties of Swi-Se-Yo, it will have a good reputation as a carry-over cocoon antiseptic. (The chemical composition and manufacturing method of Swi-Se-Yo will be published in the near future.)

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Holographic grating formation of Ag/AsGeSeS multi layer (Ag/AsGeSeS 다층 박막의 홀로그래픽 격자 형성)

  • Na, Sun-Woong;Park, Jong-Hwa;Yeo, Cheol-Ho;Shin, Kyoung;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.133-136
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    • 2001
  • In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

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Holographic grating formation of Ag/AsGeSeS multi layer (Ag/AsGeSeS 다층 박막의 홀로그래픽 격자 형성)

  • Na, Sun-Woong;Park, Jong-Hwa;Yeo, Cheol-Ho;Shin, Kyong;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.133-136
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    • 2001
  • In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

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