• Journal of Gastric Cancer
• /
• v.14 no.4
• /
• pp.252-258
• /
• 2014

Purpose: The macroscopic diagnosis of tumor invasion through the serosa during surgery is not always distinct in patients with gastric cancer. The prognostic impact of the difference between macroscopic findings and pathological diagnosis of serosal invasion is not fully elucidated and needs to be re-evaluated. Materials and Methods: A total of 370 patients with locally advanced pT2 to pT4a gastric cancer who underwent curative surgery were enrolled in this study. Among them, 155 patients with pT3 were divided into three groups according to the intraoperative macroscopic diagnosis of serosal invasion, as follows: serosa exposure (SE)(-) (no invasion, 72 patients), SE(${\pm}$) (ambiguous, 47 patients), and SE(+) (definite invasion, 36 patients), and the clinicopathological features, surgical outcomes, and disease-free survival (DFS) were analyzed. Results: A comparison of the 5-year DFS between pT3_SE(-) and pT2 groups and between pT3_SE(+) and pT4a groups revealed that the differences were not statistically significant. In addition, in a subgroup analysis of pT3 patients, the 5-year DFS was 75.1% in SE(-), 68.5% in SE(${\pm}$), and 39.4% in SE(+) patients (P<0.05). In a multivariate analysis to evaluate risk factors for tumor recurrence, macroscopic diagnosis (hazard ratio [HR], SE(-) : SE(${\pm}$) : SE(+)=1 : 1.01 : 2.45, P=0.019) and lymph node metastasis (HR, N0 : N1 : N2 : N3=1 : 1.45 : 2.20 : 9.82, P<0.001) were independent risk factors for recurrence. Conclusions: Gross inspection of serosal invasion by the surgeon had a strong impact on tumor recurrence in gastric cancer patients. Consequently, the gross appearance of serosal invasion should be considered as a factor for predicting patients' prognosis.

• Korean Journal of Materials Research
• /
• v.5 no.8
• /
• pp.988-996
• /
• 1995

CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.3
• /
• pp.232-239
• /
• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Korean Journal of Materials Research
• /
• v.32 no.8
• /
• pp.339-344
• /
• 2022

The lattice oxygen mechanism (LOM) is considered one of the promising approaches to overcome the sluggish oxygen evolution reaction (OER), bypassing -OOH^* coordination with a high energetic barrier. Activated lattice oxygen can participate in the OER as a reactant and enables O^*-O^* coupling for direct O₂ formation. However, such reaction kinetics inevitably include the generation of oxygen vacancies, which leads to structural degradation, and eventually shortens the lifetime of catalysts. Here, we demonstrate that Se incorporation significantly enhances OER performance and the stability of NiFe (oxy)hydroxide (NiFe) which follows the LOM pathway. In Se introduced NiFe (NiFeSe), Se forms not only metal-Se bonding but also Se-oxygen bonding by replacing oxygen sites and metal sites, respectively. As a result, transition metals show reduced valence states while oxygen shows less reduced valence states (O^-/O₂^2-) which is a clear evidence of lattice oxygen activation. By virtue of its electronic structure modulation, NiFeSe shows enhanced OER activity and long-term stability with robust active lattice oxygen compared to NiFe.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.350-355
• /
• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.77-81
• /
• 1992

The purpose of this research was th evaluate conductivity of electricity of Ge-Se-Bi system Chalcogenide glass as a amorphous semiconductor by observing its dissolution and crystallization. In this experiment. Ge-Se-Bi metal powder in the rage of $Ge_{12-25}$, $Se_{65-85}$, $Bi_{2.5-15}$ was used as the sample ore. The ore was. put into a vaccous quartz tube and then melted. The condition of heat treatment was to dispose it to $1000^{\circ}C$ heat for 10 hours and then rapidly quenched it at $3834^{\circ}C$/see. The crystallization of the fused sample ripened as the change of temperature and time, after the crystal core was formell. At that time it was possible to observe the state that $Bi_2Se_3$ and $GeSe_2$ were crystallized. In the experiment of making memberance, the memberance was produced by using the previously experimented bulk sample. And decrystalization was well progressed when Ge was over 15 at %, Se was over 70 at %, and Bi was under 10 at%. As for bulk. when Ge was fixed to 20 at %, the conducting of electricity was increased as Bi gained at %. In the case of memberance, the conductivity was much more increased than that of bulk sample as the increase of at the increase of at % of Bi. In the experiment on $Ge_{20}$, $Se_{77.5}$ and $Bi_{2.5}$, the crystallization sswas most vigorous when they were kept at $330^{\circ}C$ for 4 hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.1.1-5
• /
• 1996

Structural characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of 100$^{\circ}C$. But Se film was grown with monoclinic at substrate temperature of over 150$^{\circ}C$. Lattice constants of it were as follow: a=12.76[${\AA}$], b=9.15[${\AA}$], c=10.4[${\AA}$]. Finally, after heat-treatment at 150$^{\circ}C$ for 15 min with substrate temperature of 100$^{\circ}C$, noncrystalline Se was proved to be hexagonal. Lattice constants of it were as follow: a=4.27[${\AA}$], c=4.83[${\AA}$].

• Journal of the Korean Physical Society
• /
• v.73 no.11
• /
• pp.1684-1690
• /
• 2018

The layered semiconductors $Bi_2O_2Q$ (Q = S, Se) consists of $Bi_2O_2$ layers sandwiched by Q square nets. On the basis of density functional theory calculations, we examined the thermoelectric properties of $Bi_2O_2S$, $Bi_2O_2Se$ as well as hypothetical structure of $Bi_2O_2$($S_{0.5}Se_{0.5}$) consisting of mixed chalcogen nets. The thermoelectric power factor of $Bi_2O_2S_{0.5}Se_{0.5}$ is much greater than those of $Bi_2O_2S$ and $Bi_2O_2Se$, suggesting that introducing mixed chalcogen net in $Bi_2O_2Q$ is a possible way of enhancing the thermoelectric property of $Bi_2O_2Q$.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1287-1288
• /
• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.91-94
• /
• 1988

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.