• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.4-4
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• 2010

Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in $900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.5
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• pp.1592-1596
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• 2010

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.56-63
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• 2023

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N₂) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.338.2-338.2
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• 2014

투명반도체산화물은 우수한 광학적, 전기적 특성을 가지고 있기 때문에 차세대 박막트랜지스터의 채널층으로 각광을 받고 있다. 특히, 그 중에서도 a-IGZO를 이용한 TFT는 높은 가시광선 투과율(>80%)과 큰 전하이동도(>10 cm2/Vs) 를 갖는 등 좋은 광학적, 전기적 특성을 갖기 때문에 많은 연구가 이루어졌다. 여러 연구들에 의하면, a-IGZO TFT는 소스/드레인의 전극으로 어떤 물질을 사용하는지에 따라서 동작특성에 큰 영향을 미치는 것으로 알려져 있다. 일반적으로, a-IGZO 박막은 n형 반도체로써 일함수가 작은 금속과는 ohmic contact를 형성하고, 일함수가 큰 금속과는 Schottky barrier를 형성한다고 알려져 있다. 이와 관련된 대부분의 이전의 연구들에서는 각각의 전극물질에 따라 전기적인 특성변화에 초점을 맞춰서 연구하였다. 본 연구에서는 일함수가 작은 Ag와 일함수가 큰 Au를 a-IGZO의 박막 위에 얇게 증착하면서 이에 따른 고분해능 광전자분광(high-resolution x-ray photoelectron spectroscopy) 정보의 변화를 분석함으로써, 금속의 증착에 따른 금속층과 a-IGZO 표면 및 계면에서의 화학적 상태의 변화를 연구하였다. Au 4f, Ag 3d는 metallic property를 나타내기 이전까지는 lower binding energy(BE) 쪽으로 shift하였으며, In 3d 또한 lower BE 성분이 크게 증가하였다. O 1s, Ga 3d, Zn 3d들은 상대적으로 적은 변화를 나타내었는데, 이는 Ag, Au가 In과 상대적으로 더 많이 상호작용한다는 것을 의미한다. 본 발표에서는 이들 core level의 정보들과, 가전자대의 분광정보, 그리고 band bending의 정보가 제시될 것이며, 이 정보들은 metal 증착에 따른 contact 특성을 이해하는데 기여할 것으로 기대한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.95-95
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• 2011

비정질 산화물 반도체(Amorphous oxide semiconductors: AOSs)는 대면적화에도 불구하고 높은 이동도를 가지고, 상온에서도 제작할 수 있고, 투명 플렉시블 디스플레이 소자에 사용할 수 있기 때문에 최근 들어 각광받고 있는 연구 분야이다. 본 연구에서는 스퍼터링을 이용하여 활성층을 Amorphous indium gallium zinc oxide(a-IGZO)로 증착할 시에 스퍼터의 파워와 챔버내의 Ar/O2 비율을 다르게 했을 때 소자에 미치는 영향을 MIS구조를 이용하여 분석했다. 또한 같은 조건의 a-IGZO 활성층을 사용한 박막트랜지스터(TFT) 소자의 절연막의 종류를 바꿔가며 제작했을때의 소자의 특성 변화에 대해서도 분석하였다. 먼저 60 nm 두께의 a-IGZO층을 Heavily doped된 N형 실리콘 기판위에 스퍼터링 파워와 가스 분압비를 달리하여 증착하였다. 그 후 30 nm두께의 SiO2, Al2O3, SiNx 절연막을 증착하고, 마지막으로 열 증발 증착장비(Thermal Evaporator)를 이용하여 Al 전극을 150nm 증착하였다. 소자의 전기적 특성 분석은 HP4145와 Boonton 720을 사용하여 I-V와 C-V를 측정하였다. 위의 실험으로부터 스퍼터에서의 증착 rf파워가 증가할수록 a-IGZO 박막 트랜지스터에서의 캐리어 이동도가 감소하는 것을 볼 수 있었고, 챔버내의 가스분압비와 소자의 절연막의 종류가 변하면 a-IGZO 박막 트랜지스터의 전기적 특성이 변하는 것을 볼 수 있었다. 이러한 캐리어 이동도의 감소와 전기적 특성의 변화의 이유는 a-IGZO 활성층의 bulk trap과 절연막, 활성층 사이의 interface trap에 의한 것으로 보여진다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.208-213
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• 2020

In this research, design optimization was investigated using the finite element analysis and the optimal design technique based on the PQRSM algorithm to minimize the thermal deformation of IGZO oxide in a target module in which IGZO oxide and a copper backplate are bonded to each other. In order to apply the optimal design technique in conjunction with finite element analysis, the x-coordinate of lower supports and upper fixed boards used as design valuables, and the optimal design was performed to minimize the thermal displacement of IGZO materials as the objective function. After the optimization process, the thermal displacement within IGZO oxide could be reduced to 42 % comparing with the initial model. The result is thought to be useful in the industry as it can reduce the thermal deformation of target oxides materials only by changing the position of the subsidiary materials during the bonding process.