• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.394-397
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• 2001

In this paper, in-situ deposited Ru/RuO$_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and RuO$_2$ bottom electrodes are also investigated. The use of Ru/RuO$_2$ hybrid electrodes showed better electrical properties in compression with RuO$_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/RuO$_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of 7.2 C/$\textrm{cm}^2$ and 46.35 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.202-203
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• 2007

Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.249-252
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• 2005

Recently, as the industrial demand for small quantity batch production of sheet metal components, the application of dieless forming technology to production of these component rise with the advantages of the reduction in manufacturing cost and time. In dieless forming processes, the determination of moving path of tool plays an important role in producing successfully formed parts. In order to obtain the optimized moving path of tool avoiding forming failure, it is necessary to examine the forming limit of sheet material. Therefore, in this study, as the new criterion to evaluate the formability of sheet material in dieless forming processes FDD(feeding depth diagram) with respect to feeding depth and punch diameter is proposed. Thus, the FDD for the sheet materials of STS304 and Ti-grade2 were obtained from a series of FDT(feeding depth test). In addition the possibility of the application of FLD in judging forming severity in dieless forming processes was investigated by comparing the results of FE analyses based on FLD and experimental FDT.

• 한국재료학회지
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• 제19권1호
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• 대한금속재료학회지
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• 제47권3호
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• pp.195-201
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• 2009

This paper is concerned with effects of Mn and heat-input on the mechanical properties of EGW welds. Four different kinds of welding consumables were fabricated by varying Mn contents such as 1.3, 1.5, 1.7, 2.0%Mn and each consumable was welded for EGW on four heat-input conditions between 190 and 340 KJ/Cm. Mn contents were decreased as heat-input increases and alloy elements (C, Si, Ti, B, Al) to deoxidize easily also revealed similar tendency to Mn. Their microstructure, Charpy impact property and strength were investigated, and it is found that Charpy impact property and strength exhibit a strong dependence on change of microstructure by Mn contents and heat-input. The increase of Mn contents or the decrease of heat-input made the microstructure fine and increase volume fraction of acicular ferrite, thereby leading to the great improvement of Charpy impact property and strength. In case of single EGW, optimum Mn contents are over 1.7% for the toughness and strength.

• 한국응용약물학회:학술대회논문집
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• 한국응용약물학회 1995년도 춘계학술대회
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• pp.102-102
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• 1995

The present study was undertaken to investigate the behavioral and biochemical effects of ginseng total sponin (GTS) on methamphetamine-treated mice. GTS (50 or 100 mg/kg) was administered intraperitoneally two times with 2 hour interval. Two hours after the second injection of GTS, methamphetamine (2 mg/kg) was administered subcutaneously. The ambulatory activity of mice was measured by the ti1ting-type ambulometer every 10 min. for 1 hour. Methamphetamine-induced hyperactivity was reduced by GTS. in a dose-dependent manner. To study the neurochemical mechanism underlying the GTS effects, monoamine contents were measured from brain tissues. After 45 min. of methamphetamine injection. mice were sacrificed and monoamine contents were determined from the striatum. Biochemical analysis revealed that GTS reduced the methamphetamine- induced increase in striatal dopamine contents. These observations indicate that inhibition of methamphetamine-induced hyperactivity by GTS is mediated by the modulation of dopaminergic nervous system, and it could be helpful for the therapy of hyperactivity.

• 전기전자학회논문지
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• 제23권3호
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• pp.1088-1091
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• 2019

본 논문에서는 생활권역별 환경안전 실시간 모니터링 시스템을 제안한다. 제안하는 시스템은 고정형 및 이동형 측정장비를 활용하여 방사선, 미세먼지, 생활기본정보(온도) 등을 측정 하도록 설계된다. 고정형 및 이동형 측정장비로부터 수신한 데이터를 저장하는 웹 데이터베이스를 구성한다. 또한 수신한 데이터를 PC에 디스플레이하기 위한 웹 프로그램과 휴대폰에 디스플레이 위한 웹 프로그램을 개발한다. 제안된 시스템의 성능을 평가하기 위하여 공인시험기관에서 실험한 결과는 방사선 측정범위는 세계 최고 수준과 버금가는 $10{\mu}Sv/h{\sim}10mSv/h$의 범위에서 측정이 되었고, 정확도는 ${\pm}6.7%{\sim}8.7%$의 측정 불확도가 측정되어 국제 표준인 ${\pm}15%$ 이하에서 정상동작 됨이 확인되었다. 4계절을 보유한 우리나라의 온도변화 특성에 따라 $-20^{\circ}C{\sim}50^{\circ}C$의 구간에 대해 온도 시험을 수행하였으며 온도변화에 대응하여 정상동작 됨이 확인되었다. 복사전자파 내성 시험의 경우에 적합 판정으로 안정성이 확보되었다. 시제품 제작이후 약 4개월 동안 일반환경 및 고온과 저온 환경에서 제품을 테스트한 결과, 구성된 센서의 보증기간 및 운영테스트 시 작동 및 기록되는 데이터를 기반으로 약 5년 이상의 내구성이 확인되었다. 미세먼지 센서에 대한 측정범위와 정확도는 대기환경 측정 기업을 통하여 상대성 비교 테스트를 진행하고 대기질 측정 기록부를 통하여 성능수준이 유사함을 확인하였다.