• Journal of the Korean Chemical Society
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• v.4 no.1
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• pp.15-17
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• 1957

1. Preparation of Titanium tetrachloride; The following precesses were strictly followed as the preliminary step to obtain pure $TiOCl_2$, titanyl chloride; First, pure Titanium Oxide mixed with carbon is rolled into pills. After drying up perfectly, these pills are heated at 900∼1000${\circ}C$. And then the pills are subjected to the flow of $Cl_2$ gas in a quartz tube heated to 900-1000${\circ}C$. Thus Titanium tetrachloride is obtained. 2. Preparation of $TiOCl_2$ ; Yellowish trobrown solution is made by pouring 80 g of conc. HCl (sp.gr. 1.19) to 45 gr of Titanium tetrachloride (approx. 2 times of theoretical amount). Then this solution is kept settled for 5-days in a desiccator filled with phosphorous pentoxide at room temperature. As the colorless amorphous solid thus obtained is washed with aceton, 36.5 g of the pure salt are obtained. 3. Determination of composition. The analysis of the sample taken from the deposit desiccated gives the following data; (A) Qualitative analysis; a) $Ti(OH)_4$ is precipitated by adding NaOH in water solution of the salt. b) Adding $AgNO_3$ solution, the water solution of the salt gives white precipitate of AgCl. c) When acid and $H_2O_2$ are added, the solution turns its color to redish brown (This proves that $TiO^{++}$ was converted into $TiO^{++}$ by oxidation of $H_2O_2$. (B) Quantitative analysis; a) $Ti(OH)_4$ precipitated by $10{\%}$ NaOH isalitatsubjected consecutively to the filtration and ignition in porcelain crucible at approx. 1000${\circ}C$. , then $TiO_2$ thus formed is weighed and calculated into Ti content. b) Chlorine involved in water solution of the salt is determined by Vorhardt method. Result: The values obtained from previous analysis, devied by their atomic weight gives the following composition: Ti : Cl = 1 : 2 Therefore $TiOCl_2$ should be given as its molecular formula. 4. Summary. When $TiCl_4$ is additated into conc. HCl, $TiO^{++}$ formed exists as a stable form, and forms $TiOCl_2$. However $TiOCl_2$ is unstable to heating. When the temperature is raised to $65{\circ}C$the decomposition of the solution is accelerated, and gives $TiO_2$ aq. $TiOCl_2$ in addition is highly hygroscopic.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.486-491
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• 2006

A new $TiN-Ti_5Si_3$ bulk composite was synthesized from preceramic, inorganic polymer (methylpolysilsesquioxane) and $TiH_2$ filler powders via polymer pyrolysis. Using this process, ceramics with high melting points can be produced relatively easily to a near net shape. The $TiN-Ti_5Si_3$ composite oxidized slowly during heating to $1000^{\circ}C$. During heating at the temperatures of at 700 and $800^{\circ}C$, TiN oxidized to Rutile-$TiO_2$ whereas $Ti_5Si_3$ resisted to oxidation. The oxide scale formed consisted primarily of $TiO_2$ containing $Ti_5Si_3$.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Journal of the Korean Ceramic Society
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• v.26 no.5
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• pp.670-676
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• 1989

The PbTiO3 is well known materials having remarkable ferroelectric, piezoelectric, and pyroelectric properties. PbTiO3 thin films with a perovskite structure were successfully fabricated on titanium substrate by chemical vapor deposition. These films were characterized according to composition, crystal structure, and electrical properties. Semi-quantitative compositional analysis of the deposited films was made by Auger Electron Spectroscopy(AES). The PbTiO3 film deposited on titanium substrate at the deposition temperature 75$0^{\circ}C$, the Ti(C2H5O)4 fraction 0.15, and O2 partial pressure 0.06atm, has a columnar structure and grows with(001) preferred orientation, and has stoichiometric composition. A clear dielectric transition and offset in the dc conductivity near the transition temperature(48$0^{\circ}C$) were observed in the deposited lead titanate film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.80-84
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• 2003

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.288-291
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• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• Carbon letters
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• v.8 no.3
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• pp.177-183
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• 2007

[ $TiO_2$ ]ACF composites were prepared by the electrochemical method with Titanium (IV) n-butoxide (TNB) electrolyte under different electrochemical operation time. The BET surface area for $TiO_2$/ACF composites decrease with the increase of electrochemical operation time. There is a single crystal structure which is anatase in all of the samples from the data of XRD. The SEM micrphotographs of $TiO_2$/ACF composites show that the $TiO_2$ particles were well mixed with the ACF. There are O and P with strong C and Ti peaks in all samples from EDX results, and it also shows that a decrease of the C content with a increasing of Ti content with increasing of the electrochemical operation time in the over all composites. DSC cures show that the exothermic peak of all composites at $560^{\circ}C$ represents the transformation heat of amorphous parts to anatase phase and the discontinuous grain growth of the transformed anatase particles. Finally, the excellent photoactivity of $TiO_2$/ACF composites (especially, ACFT10) could be attributed that the decrease of concentration of MB can be concluded to be much faster for the adsorption by ACF than for photocatalytic decomposition by $TiO_2$.

• Journal of Electrochemical Science and Technology
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• v.13 no.4
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• pp.431-437
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• 2022

As one of the most hazardous and deadliest pathogens, Listeria monocytogenes (LM) posed various serious diseases to the human being, thus designing effective strategy for its detection is of great significance. In this work, by preparing Ti₃C₂T_x MXenes nanoribbon (Ti₃C₂T_xR) as carrier and selecting thionine (Th) acted simultaneously as signal probe and functional monomer, a LM pathogen-imprinted polymers (PIP) integrated probe electrochemical sensor was design to monitor LM for the first time, that was carried out through the electropolymerization of Th on the Ti₃C₂T_xR/GCE surface in the existence of LM. Upon eluting the templates from the LM imprinted cavities, the fabricated PIP/Ti₃C₂T_xR/GCE sensor can rebound LM cells effectively. By recording the peak current of Th as the response signal, it can be weakened when LM cell was re-bound to the LM imprinted cavity on PIP/Ti₃C₂T_xR/GCE, and the absolute values of peak current change increase with the increasement of LM concentrations. After optimizing three key parameters, a considerable low analytical limit (2 CFU mL^-1) and wide linearity (10-10⁸ CFU mL^-1) for LM were achieved. In addition, the experiments demonstrated that the PIP/Ti₃C₂T_xR sensor offers satisfactory selectivity, reproducibility and stability.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.