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Properties of SiC-Ti $B_2$ Electroconductive Ceramic Composites by Pressureless Annealing  

신용덕 (원광대 전기전자 및 정보공학부)
주진영 (원광대 전기공학과)
최광수 (원광대 전기공학과)
오상수 (원광대 전기공학과)
윤양웅 (원광대 전기전자 및 정보공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.52, no.2, 2003 , pp. 80-84 More about this Journal
Abstract
The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.
Keywords
Electroconductive; Pressureless Annealed; Liquid Additive YAG; Fracture Toughness; PTCR;
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Times Cited By KSCI : 2  (Citation Analysis)
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