• 전기학회논문지
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• 제61권4호
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.321-322
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• 2009

Al doped ZnO films deposited on glass substrate using RF magnetron sputtering in Ar and $Ar+H_2$ gas ambient at $100^{\circ}C$. The films deposited in $Ar+H_2$ were hydrogen-annealed at the temperature of $150\sim300^{\circ}C$ for 1hr. The lowest resistivity of $4.25\times10^{-4}{\Omega}cm$ was obtained for the AZO film deposited in $Ar+H_2$ after hydrogen annealing at $300^{\circ}C$ for 1hr. The average transmittance is above 85% in the range of 400-1000 nm for all films. The absorption efficiency of solar cell was improved by using the optimized AZO films as a top electrode.

• Journal of Magnetics
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• 제6권1호
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• pp.23-26
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• 2001

Nano-crystalline hexaferrite $BaFe_{12}O_{19}$(BaM) thin films have been prepared by the sol-gel method. A solution of Ba-nitrate and Fe-nitrates was dissolved in solvent with the stoichiometric ratio Ba/Fe=1/10. Films were spin-coated onto $SiO_2$Si substrates, dried and then heated in air at various temperatures. In films prepared at a drying temperature $T_d=250^{\circ}C$ and a crystallizing temperature 650${\circ}C$, single-phase BaM was obtained. High coercivities were obtained in these nano-crystalline thin films, 4~5.5 kOe for hexaferrite. Polycrystalline BaM/$SiO_2$/Si(100) thin films were characterized by Rutherford backscattering (RBS), thermogravimetry (TGA), differential thermal analysis (DTA), x-ray diffraction (XRD), and vibrating sample magnetometry (VSM), as well as Fourier transform infrared spectroscopy (FTIR). The perpendicular coercivity $H_{C\bot}$ and in-plane coercivity $H_{CII}$ after annealing at 650${\circ}C$ for 2 hours were 4766 Oe and 4480 Oe, respectively, at room temperature, under a maximum applied field of 10 kOe.

• Journal of Magnetics
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• 제4권4호
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• pp.119-122
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• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

• Journal of Magnetics
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• 제9권4호
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Bulletin of the Korean Chemical Society
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• 제15권2호
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• pp.126-132
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• 1994

RhCl [P($C_6H_5)_3]_3$ complexes have been incorporated in polysulfone (PS) as a dispersion medium using cosolvent (THF). The interactions between Rh(Ⅰ) complexes and polysulfone polymer molecules are examined by infrared spectroscopy and thermal analysis. The chemical reactivity of Rh in PS films has been investigated by reacting Rh sites with CO, $H_2,\;D_2,\;O_2\;NO,\;C_2H_2\;and\;C_2H_4$ in the temperature range $25-200^{\circ}C$. Various Rh-carbonyl, -hydride and -nitrosyl species formed in PS films are characterized by their infrared spectra. Rh complexes in PS film show interesting catalytic reactivities in the reactions such as hydrogenation of $C_2H_2\;and\;C_2H_4$, oxidation of CO, and reduction of NO by CO or $H_2$ gas under relatively mild conditions.

• 한국자기학회지
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• 제8권5호
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• pp.295-299
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• 1998

페라이트 도금 방법은 진공이 불필요하며 저온(<10$0^{\circ}C$)에서 페라이트 박막을 제작할 수 있다. 이 방법으로 기판온도 8$0^{\circ}C$, 산화용액의 pH 7.1~8.8 영역에서 모두 스피넬 구조의 NixFe3-xO4 (x=0.162~0.138) 박막을 얻었다. 이들은 열처리를 하지 않았음에도 불구하고 결정성이 우수한 다결정의 박막을 얻었다. 박막의 성장속도는 산화용액의 pH가 7.1에서 8.8까지 변함에 따라 성장속도가 143$\AA$/min에서 255 $\AA$/min 까지 증가하였다. 산화용액의 pH가 증가할수록 입경의 크기가 증가하고, 보자력은 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.1-2
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• 2008

Thick films of Carbon fiber were prepared by a heating element of plan shape made in Darin co.. We have investigated surface morphology of the specimen depending on second heat-treatment temperatures. X-ray diffraction patterns of Carbon fiber thick films show that the specimen heat treated below $600^{\circ}C$ was an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. Scanning electron microscope(SEM) image of Carbon fiber thick films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1685-1686
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• 2000

Crack-free and homogeneous com ceramic and epitaxial lead zirconate titanat ferroelectric thin films with perovskite structure been prepared by sol-gel processing. Ti-isoprop and lead acetate trihydrate and zirconium-pro are used raw materials. EAcAc is used as a cat 2-Methoky ethanol is used as a solvent annealing temperatures of the thin films are 0$^{\circ}C$.