• Title/Summary/Keyword: a-C/B:H film

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A Study on the curing characteristics of 6FDA/4-4' DDE Polyimide thin film fabricated by vapor deposition polymerization (진공증착중합에 의해 제조된 6FDA/4-4' DDE 폴리이미드 박막의 열처리 특성에 관한 연구)

  • Hwang, S.Y.;Lee, B.J.;Kim, H.G.;Kim, J.T.;Kim, Y.B.;Park, K.S.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.816-818
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    • 1998
  • In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

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Study on Electrical Conductivity, Transmittance and Gas Barrier Properties of DLC Thin Films (DLC 박막의 전기전도성, 투과율 및 가스베리어 특성에 관한 연구)

  • Park, S.B.;Kim, C.H.;Kim, T.G.
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.4
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    • pp.187-193
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    • 2018
  • In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

Effects of B Addition and Heat Treatment on the Magnetic and Magnetostrictive Properties of Amorphous $SmEe_2$ thin Films (비정질 $SmFe_2 $합금의 자기적 및 자기변형 특성에 미치는 B 첨가와 열처리 영향)

  • Choi, K.G.;Jang, Ho;Han, S.H.;Kim, H.J.;Lim, S.H.
    • Journal of the Korean Magnetics Society
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    • v.10 no.5
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    • pp.237-245
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    • 2000
  • Effects of B addition and heat treatment on the magnetic and magnetostrictive properties of amorphous SmFe$_2$ thin films are investigated. A significant improvement in the magnetostrictive properties at low magnetic fields is observed with the addition of B. This improvement, however, is achieved at a heavy cost of intrinsic properties such as saturation magnetostriction. For example, at a magnetic field of 30 Oe, magnetostriction of a thin film with a B content of 9.9 at.% is increased from 190 to 333 ppm, but saturation magnetostriction is decreased by more than 50 %. This result is in accord with the deterioration (reduction) of saturation magnetization and the improvement (reduction) of coercive force at this B content. The magnetostrictive properties are also improved by annealing and optimum annealing temperature is found to be in the range 300-400 $^{\circ}C$. The main reason for the improvement is mainly considered to be due to the reduction of coercive force caused by stress relief, not due to the ultrafine SmFe$_2$ precipitates which were originally expected to form by annealing.

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A Study on the Physical Characteristics of III-V Compound Boron Phosphide using CVD (CVD를 이용해 증착한 III-V 화합물 보론 포스파이드의 물성분석에 관한 연구)

  • Hong, Kuen-Kee;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.332-335
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    • 2004
  • Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

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Synthesis of a Triblock Copolymer Containing a Diacetylene Group and Its Use for Preparation of Carbon Nanodots

  • Kim, Beom-Jin;Oh, Dong-Kung;Chang, Ji-Young
    • Macromolecular Research
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    • v.16 no.2
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    • pp.103-107
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    • 2008
  • Carbon nanodots were prepared by the pyrolysis of a triblock copolymer. The triblock copolymer, poly(methyl methacrylate)-b-polystyrene-b-poly(methyl methacrylate) was synthesized by atom transfer radical polymerization using an initiator containing a diacetylene group. A polymer thin film on a mica substrate was prepared by spin-casting at 2,000 rpm from a 0.5 wt% toluene solution of the triblock copolymer. After drying, the cast film was vacuum-annealed for 48 h at $160^{\circ}C$. The annealed film formed a spherical morphology of polystyrene domains with a diameter of approximately 30 nm. The film was exposed to UV irradiation to induce a cross-linking reaction between diacetylene groups. In the subsequent pyrolysis at $800^{\circ}C$, the cross-linked polystyrene spheres were carbonized and the poly(methyl methacrylate) matrix was eliminated, resulting in carbon nanodots deposited on a substrate with a diameter of approximately 5 mn.

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

  • Putri, W.B.K.;Kang, B.;Ranot, M.;Lee, J.H.;Kang, W.N.
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.2
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    • pp.20-23
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    • 2014
  • We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.

A Study on the Contaminants Precision Cleaning of Etched Silicon Wafer by Ozone/UV (오존/자외선에 의한 실리콘 웨이퍼의 정밀세정에 관한 연구)

  • Park, H.M.;Lee, C.H.;Chun, B.J.;Yoon, B.H.;Lim, C.H.;Song, H.J.;Kim, Y.H.;Lee, K.S.
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1820-1822
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    • 2004
  • In this study, major research fields are classified as ozone generation system for dry cleaning wafer of etched silicon wafer, dry cleaning process of etched silicon wafer which includes SEM analysis and ESCA analysis. The following results are deduced from each experiment and analysis. The magnitudes of carbon and silicon were similar to the survey spectrum of silicon wafer which does not cleaning, but magnitude of oxygen was much bigger Because UV light activates oxygen molecules in the oxide film on the silicon wafer.

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Effect of Surface finishing method and sunning on top layer Kochuiang Quality during Aging (표면마감방법과 볕쪼임이 숙성중 표층 고추장 품질에 미치는 영향)

  • Kim, Joong-Man;Song, Hyun-Ju;Yang, Hee-Cheon
    • Journal of the Korean Society of Food Culture
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    • v.8 no.3
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    • pp.249-255
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    • 1993
  • To minimize the waste amount of surface layer kochujang during aging, the effects of the three finishing methods(nothing, salt scatering and Polyethylene film on the kochujang surface) and sunning(conventional aging method) or nonsunning aging(cap covering) on water content, redness and spreadability, film forming yeast occurance and salinity of surface layer kochujang during 120 days aging were investigated. In the case of sunning aging, film forming yeast was not visually found on the surface. The surface layer kochujang was so low spreadability(zero) and very high salinity(18-30%) that could not eat. However, the aging method after PE-film covering on the kochujang surface, and then cap covering(nonsunning) was very effective in keeping of soundness of surface layer kochujang without film forming yeast growth on the surface kochujang, especially was greatly effective in keeping of redness, moderate moisture content and spreadability. The PE-film and cap covering aging were effective in prevention of water evaporation and $CO_2$ release, and in accumulation of ethanol and organic acids between the PE-film and surface layer of kochujang.

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Observation of magnetic fields due to persistent currents in a ring made of a coated conductor

  • Goo, Doo-Hoon;Kim, Ho-Sup;Youm, D.;Jung, Kook-Chae
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.92-98
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    • 2000
  • A ring comprising a coated conductor was fabricated. A ring was made first using a biaxially textured Ni tape whose two ends were connected by means of the atomic diffusion bonding technique. Then buffer layers and a YBCO film were deposited on it. All the films were well textured as confirmed by XRD pole figures. The B-H loops, where B and H are the magnetic field at the center of the ring and the applied field respectively, were measured as a function of temperature. The persistent current density (J$_c$) flowing circularly was estimated from the remanent field of B. In the range of temperature from 72K to 20K, J$_c$ changed from zero to 2${\times}$1 0$^5$A/cm$^2$.

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The Crystal and Molecular Structures of Sulfamethoxypyridazine (Sulfamethoxypyridazine의 결정 및 분자구조)

  • Young Ja Lee;Young Ja Park
    • Journal of the Korean Chemical Society
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    • v.25 no.4
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    • pp.219-227
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    • 1981
  • The crystal structure of sulfamethoxypyridazine has been solved by the direct method and refined by least squares methods from three-dimensional data collected by the multiple-film technique to a final residual of 8.5%. Two molecules (A and B) in one asymmetric unit are different each other in the conformation about S-N(2) bond, and are linked together by N(2A)H${\ldots}$N(3B) and N(2B)H${\ldots}$O(1A)S hydrogen bonds. Benzene and pyridazine rings make the angles of $89^{\circ}$ and $77^{\circ}$ for molecules A and B respectively.

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