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http://dx.doi.org/10.9714/psac.2014.16.2.020

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer  

Putri, W.B.K. (Department of Physics, Chungbuk National University)
Kang, B. (Department of Physics, Chungbuk National University)
Ranot, M. (Department of Physics, Sungkyunkwan University)
Lee, J.H. (Department of Physics, Sungkyunkwan University)
Kang, W.N. (Department of Physics, Sungkyunkwan University)
Publication Information
Progress in Superconductivity and Cryogenics / v.16, no.2, 2014 , pp. 20-23 More about this Journal
Abstract
We have grown $MgB_2$ on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and $600^{\circ}C$ by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, $MgB_2$ films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the $MgB_2$ films on SiC/Hastelloy deposited at 500 and $600^{\circ}C$. From the surface analysis, smaller and denser grains of $MgB_2$ tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of $MgB_2$ tapes.
Keywords
$MgB_2$ films; critical current density; SiC buffer layers; Hastelloy;
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Times Cited By KSCI : 2  (Citation Analysis)
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