• Journal of the Korean Applied Science and Technology
• /
• v.25 no.2
• /
• pp.130-136
• /
• 2008

$xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.2
• /
• pp.99-103
• /
• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.6
• /
• pp.441-447
• /
• 2022

Silicon-based materials are one of the most promising anode active materials in lithium-ion battery. A carbon layer decorated on the surface of silicon particles efficiently suppresses the large volume expansion of silicon and improves electrical conductivity. Carbon coating through chemical vapor deposition (CVD) is one of the most effective strategies to synthesize carbon- coated silicon materials suitable for mass production. Herein, we synthesized carbon coated SiOx via pilot scale CVD reactor (P-SiO_x@C) and carbon coated SiO_x via industrial scale CVD reactor (I-SiO_x@C) to identify physical characteristic changes according to the CVD capacity. Reduced size silicon domains and local non-uniform carbon coating layer were detected in I-SiO_x@C due to non-uniform temperature distribution in the industrial scale CVD reactor with large capacity, resulting in increased surface area due to severe electrolyte consumption.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.3
• /
• pp.19-24
• /
• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Journal of Sensor Science and Technology
• /
• v.1 no.1
• /
• pp.5-12
• /
• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.5
• /
• pp.295-299
• /
• 2015

In this paper to improve the ionic conduction properties, lanthanum silicate apatite $La_{9.33}(SiO_4)_6O_2$ ceramic, which substituted by V ions at Si-site, were fabricated by the mixed-oxide method. And we investigated the structural and electrical properties of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens with variation of dopants for the application of solid oxide fuel cells. The sintering temperature of $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens decreased from $1,600^{\circ}C$ to $1,400^{\circ}C$. As results of X-ray diffraction patterns, all $La_{9.33}(Si_{6-x}V_x)O_{26}$ specimens showed the formation of a complete solid solution in a apatite polycrystallin structure. But the specimens doped with more than 1.5mol% showed the second phase, $La_2SiO_5$ and $SiO_2$. The specimen dopants with 1.0 mol% showed the maximum ion conductivity. Ion conducting and activation energy of the $La_{9.33}(Si_5V_1)O_26$ specimens were about $7.8{\times}10^{-4}S/cm$ 1.62 eV at $600^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.1
• /
• pp.78-85
• /
• 2019

The effect of various lithium sources such as LiCl, LiOH, and Li-metal on the microstructure and electrochemical properties of granulated $SiO_x$ powders were investigated. Various lithium sources were metallurgically added for a passive pre-lithiation of $SiO_x$ to improve its low initial coulombic efficiency. In spite of using the same amount of Li in various sources, as well as the same process conditions, different lithium silicates were obtained. Moreover, irreversible phases were formed without reduction of $SiO_x$, which might be from additional oxygen incorporation during the process. Accordingly, there were no noticeable electrochemical enhancements. Nevertheless, the $Li_4SiO_4$ phase changes the initial electrochemical reaction, and consequently the relationship between the microstructure and electrochemical properties of metallurgically pre-lithiated $SiO_x$ could provide a guideline for the optimization of the performance of lithium ion batteries.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.709-715
• /
• 1996

The influence of an electric field on the combustion synthesis of ${Ti}_{5}{Si}_{3}$-x ${ZrO}_{2)$(0 $\leq$ x $\leq$0.6)was investigated. Composite of X $\geq$0.45 can only be synthesized in the presence of an electric field. Although in the absence of an electri field the system with x = 0.45 and x=0.6 can sustain a nonsteady combustion wave, the reaction is not complete. That is, an unstable wave propagates to the middle of the sample and them becomes extinguished. Wave velocity o the ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ Composites slightly increases with the imposition of external field across the sample.

• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.71-75
• /
• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• Journal of the Korean Ceramic Society
• /
• v.53 no.4
• /
• pp.463-467
• /
• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.