• Title/Summary/Keyword: a two-layer structure

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Structure of Edge Flame in a Methane-Oxygen Mixing Layer (메탄/순산소 혼합층에서 Edge Flame의 구조)

  • Choi, S.K.;Kim, J.;Chung, S.H.;Kim, J.S.
    • Journal of the Korean Society of Combustion
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    • v.11 no.1
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    • pp.19-26
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    • 2006
  • Structure of edge flame established in a mixing layer, formed between two uniformly flowing pure $CH_4$ and pure $O_2$ streams, is numerically investigated by employing a detailed methane-oxidation mechanism. The numerical results exhibited the most outstanding distinction of using pure oxygen in the fuel-rich premixed-flame front, through which the carbon-containing compound is found to leak mainly in the form of CO instead of HC compounds, contrary to the rich $CH_4-air$ premixed flames in which $CH_4$ as well as $C_2H_m$ leakage can occur. Moreover, while passing through the rich premixed flame, a major route for CO production, in addition to the direct $CH_4$ decomposition, is found to be $C_2H_m$ compound formation followed by their decomposition into CO. Beyond the rich premixed flame front, CO is further oxidized into $CO_2$ in a broad diffusion-flame-like reaction zone located around moderately fuel-rich side of the stoichiometric mixture by the OH radical from the fuel-lean premixed-flame front. Since the secondary CO production through $C_2H_m$ decomposition has a relatively strong reaction intensity, an additional heat-release branch appears and the resulting heat-release profile can no longer be seen as a tribrachial structure.

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Highly stable amorphous indium.gallium.zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure

  • Mativenga, M.;Choi, J.W.;Hur, J.H.;Kim, H.J.;Jang, Jin
    • Journal of Information Display
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    • v.12 no.1
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    • pp.47-50
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    • 2011
  • Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

Aeroelastic model test of a 610 m-high TV tower with complex shape and structure

  • Ding, Quanshun;Zhu, Ledong
    • Wind and Structures
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    • v.25 no.4
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    • pp.361-379
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    • 2017
  • In view of the importance of the wind-structure interaction for tall and slender structures, an aeroelastic model test of the 610m-high TV tower with a complex and unique structural configuration and appearance carried out successfully. The assembled aeroelastic model of the TV tower with complex shape and structure was designed and made to ensure the similarities of the major natural frequencies and the corresponding mode shapes. The simulation of the atmospheric boundary layer with higher turbulent intensity is presented. Since the displacement and acceleration responses at several measurement sections were directly measured in the wind tunnel test, a multi-mode approach was presented to indirectly estimate the displacement and acceleration responses at arbitrary structural floors based on the measured ones. It can be seen that it is remarkable for the displacement and acceleration responses of the TV tower in the two horizontal directions under wind loads and is small for the dynamic response of the torsional displacement and acceleration.

Searching a global optimum by stochastic perturbation in error back-propagation algorithm (오류 역전파 학습에서 확률적 가중치 교란에 의한 전역적 최적해의 탐색)

  • 김삼근;민창우;김명원
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.3
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    • pp.79-89
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    • 1998
  • The Error Back-Propagation(EBP) algorithm is widely applied to train a multi-layer perceptron, which is a neural network model frequently used to solve complex problems such as pattern recognition, adaptive control, and global optimization. However, the EBP is basically a gradient descent method, which may get stuck in a local minimum, leading to failure in finding the globally optimal solution. Moreover, a multi-layer perceptron suffers from locking a systematic determination of the network structure appropriate for a given problem. It is usually the case to determine the number of hidden nodes by trial and error. In this paper, we propose a new algorithm to efficiently train a multi-layer perceptron. OUr algorithm uses stochastic perturbation in the weight space to effectively escape from local minima in multi-layer perceptron learning. Stochastic perturbation probabilistically re-initializes weights associated with hidden nodes to escape a local minimum if the probabilistically re-initializes weights associated with hidden nodes to escape a local minimum if the EGP learning gets stuck to it. Addition of new hidden nodes also can be viewed asa special case of stochastic perturbation. Using stochastic perturbation we can solve the local minima problem and the network structure design in a unified way. The results of our experiments with several benchmark test problems including theparity problem, the two-spirals problem, andthe credit-screening data show that our algorithm is very efficient.

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The Study of Si homoepitaxial growth on Si(111) Surface (Si(111)표면 위에서 Si의 동종층상성장에 관한 연구)

  • Kwak, Ho-Weon;moon, Byung-yeon
    • Journal of the Korean Society of Industry Convergence
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    • v.7 no.4
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    • pp.349-354
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    • 2004
  • The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

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Blast resistance of a ceramic-metal armour subjected to air explosion: A parametric study

  • Rezaei, Mohammad Javad;Gerdooei, Mahdi;Nosrati, Hasan Ghaforian
    • Structural Engineering and Mechanics
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    • v.74 no.6
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    • pp.737-745
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    • 2020
  • Nowadays, composite plates are widely used as high-strength structures to fabricate a dynamic loading-resistant armours. In this study, the shock load is applied by an explosion of spherical TNT charge at a specified distance from the circular composite plate. The composite plate contains a two-layer ceramic-metal armour and a poly-methyl methacrylate (PMMA) target layer. The dynamic behavior of the composite armour has been investigated by measuring the transferred effective stress and maximum deflection into the target layer. For this purpose, the simulation of the blast loading upon the composite structure was performed by using the load-blast enhanced (LBE) procedure in Ls-Dyna software. The effect of main process parameters such as the thickness of layers, and scaled distance has been examined on the specific stiffness of the structure using response surface method. After validating the results by comparing with the experimental results, the optimal values for these parameters along with the regression equations for transferred effective stress and displacement to the target have been obtained. Finally, the optimal values of input parameters have been specified to achieve minimum transferred stress and displacement, simultaneously with reducing the weight of the structure.

Study on the Making Wall Techniques behind the Buddha in Main Building of Bongjeongsa Temple (봉정사 대웅전 후불벽체의 제작기법에 관한 연구)

  • Jeong, Hye-Young;Han, Kyeong-Soon
    • Journal of Conservation Science
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    • v.23
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    • pp.53-65
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    • 2008
  • This research investigated and analyzed the structure and material feature of the wall behind the Buddha of main temple in An-dong Bongjeonsa through applying the natural scientific method, in order to closely examine its production technique. As a result of the research, the structural and material feature of the wall has been clarified and its production technique applied to the structure has been understood in a comprehensive sense. The target sample basically adopted the two-layer wall system, which showed a symmetric structure to the center made with the wooden material, and is estimated to follow the structural tendency of a general wall which is organized with the first layer, the midterm layer, and the painting wall layer. Each layer formed by the production procedure showed difference in the material and production method according to its characteristics and roles. And it was identified that, in general, the higher a layer lies, the finer grains it has. Combination of the main materials and the additives, used for the wall forming, was presumed to contribute to improving its durability and conservativeness. Also interaction between the materials generating the conservativeness and the producer's technical effect seemed to fortify solidity of the wall.

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A Simple Microwave Backscattering Model for Vegetation Canopies

  • Oh Yisok;Hong Jin-Young;Lee Sung-Hwa
    • Journal of electromagnetic engineering and science
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    • v.5 no.4
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    • pp.183-188
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    • 2005
  • A simple microwave backscattering model for vegetation canopies on earth surfaces is developed in this study. A natural earth surface is modeled as a two-layer structure comprising a vegetation layer and a ground layer. This scattering model includes various scattering mechanisms up to the first-order multiple scattering( double-bounce scattering). Radar backscatter from ground surface has been modeled by the polarimetric semi-empirical model (PSEM), while the backscatter from the vegetation layer modeled by the vector radiative transfer model. The vegetation layer is modeled by random distribution of mixed scattering particles, such as leaves, branches and trunks. The number of input parameters has been minimized to simplify the scattering model. The computation results are compared with the experimental measurements, which were obtained by ground-based scatterometers and NASA/JPL air-borne synthetic aperture radar(SAR) system. It was found that the scattering model agrees well with the experimental data, even though the model used only ten input parameters.

Practical and Provable Security against Differential and Linear Cryptanalysis for Substitution-Permutation Networks

  • Kang, Ju-Sung;Hong, Seok-Hie;Lee, Sang-Jin;Yi, Ok-Yeon;Park, Choon-Sik;Lim, Jong-In
    • ETRI Journal
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    • v.23 no.4
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    • pp.158-167
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    • 2001
  • We examine the diffusion layers of some block ciphers referred to as substitution-permutation networks. We investigate the practical and provable security of these diffusion layers against differential and linear cryptanalysis. First, in terms of practical security, we show that the minimum number of differentially active S-boxes and that of linearly active S-boxes are generally not identical and propose some special conditions in which those are identical. We also study the optimal diffusion effect for some diffusion layers according to their constraints. Second, we obtain the results that the consecutive two rounds of SPN structure provide provable security against differential and linear cryptanalysis, i.e., we prove that the probability of each differential (resp. linear hull) of the consecutive two rounds of SPN structure with a maximal diffusion layer is bounded by $p^n(resp.q^n)$ and that of each differential (resp. linear hull) of the SDS function with a semi-maximal diffusion layer is bounded by $p^{n-1}(resp. q^{n-1})$, where p and q are maximum differential and linear probabilities of the substitution layer, respectively.

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Martensitic Stainless Steel Nitrided in a Low-Pressure rf Plasma (RF플라즈마에 의한 마르텐사이트 스테인레스강의 질화에 관한 연구)

  • J.S. Yoo;S.K. Kim
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.69-69
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    • 2001
  • We report a study of the nitriding of the martensitic grade of stainless steel AKSK 420 in a low-pressure rl discharge using pure nitrogen. Much studied samples of the austenitic grade AISI 304 were treated at the same time to provide a comparison. With a treatment time of 4.0 h at $400^{\circ}C$, the nitrogen-rich layer on MSK 420 is 20pm thick and has a hardness about 4.3 times higher than that of the untreated material. The layer thickness is much greater than that obtained on AISI 304 under identical treatment conditions, reflecting the different Cr content of the two alloys. The alloy AlISI 420 is more susceptible than AISI 304 to the formation of CrN and ferrite, and this has a deleterious effect on the hardnes, gain. Below the temperature at which CrN forms, the treated layer retains its martensitic structure, but with a larger lattice parameter than the bulk, a phase that we term expanded martensite, by analogy with the situation with austenitic stainless steel. The fact that the treated layer retains a martensitic structure is interesting in view of previous evidence that nitrogen is an austenite stabilizer.

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