• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1187-1191
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• 2000

정방정형 지르코니아를 상온에서 안정화시키는 이트리아와, 지르코니아의 저온 열화을 억제하고 파괴강도의 증가에 기여하는 알루미나를 YAG(5Al$_2$O$_3$.3Y$_2$O$_3$) 졸의 형태로 m-ZrO$_2$와 알루미나의 혼합 slurry에 첨가하여, m-ZrO$_2$를 yttria 안정화 지르코니아로의 in situ 변환과 동시에 알루미나의 분산도를 향상시키고자 하였다. 20wt% 알루미나-지르코니아(YSZ)의 복합체 (20ATZ)를 1450$^{\circ}$~150$0^{\circ}C$에서 상압소결하여 0.5$mu extrm{m}$ 이하의 균일한 미세구조로 얻었다. 이 복합체는 정방정형 지르코니아와 $\alpha$-알루미나 상으로만 이루어지었고, 소결밀도 >99% TD이었다. 제조된 복합체의 파괴강도는 810 MPa로, 고상법으로 $Al_2$O$_3$와 3Y-ZrO$_2$분말로부터 제조된 시편의 682 MPa 보다 약 20% 향상되었고, 파괴인성은 5.52 MPa.m$^{1}$2/로 고상법으로 제조된 시편의 5.39 MPa.m$^{1}$2/과 비슷하였다.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.134-137
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• 2000

Zirconia films stabilized b $Y_2O_3$, YSZ, films were deposition by metal organic chemical vapor deposition (MOCVD) onto various kind of substrates. $Y_2O_3$, $ZrO_2$and the mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_H_9)_4$source gas ratios and the deposition temperature. The Y/Zr ratio in YSZ film could be adjusted by controlling the ratio of $Y(C_{11}H_{19}O_2)_3$, Zr(O.t-$C_4H_9)_4$partial pressures. This is because the ratios of the deposition rates of Y and Zr atoms in $Y_2O_3$and $ZrO_2$films to those in YSZ films, Ф, are constant irrespective of the input gas concentration. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of un-mixed $Y_2O_3$and $ZrO_2$films. This is because the Фs of Y and Zr atoms are not equal. The activation energy of $Y_2O_3$component in YSZ films was similar to that of $ZrO_2$component in YSZ films. These YSZ values were more than 4 times larger than those of un-mixed $Y_2O_3$or $ZrO_2$films.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.237-237
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• 2003

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.635-642
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• 1993

To obtain a higher dielectric constant material, we investigated Ca substitution for Pb in PbZrO3. In this study, the four mixtures of (Pb0.68Ca0.32)ZrO3, (Pb0.65Ca0.37)ZrO3, (Pb0.63Ca0.37)ZrO3, and (Pb0.60Ca0.40)ZrO3 were prepared by coprecipitation reaction of Pb(NO3)2, ZrOCl2, and CaCl2 with (NH4)2CO3 and NH4OH in aqueous solution. The (Pb1-xCax)ZrO3 with different x mole fractions (x=0.35, 0.37) showed not only high dielectric constant, but also high Q values and low temperature coefficient of the capacitance.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.420-426
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• 2002

$ZrO_2$, $Y_2O_3$-doped $ZrO_2$ and CaO-doped $ZrO_2$ powders were prepared by hydrothermal crystallizing spherical $ZrO_2$ gel which had been synthesized by thermal hydrolysis reaction. After the hydrothermal crystallization process, the formed crystallized powders sustained its original spherical shape and had the mean particle size of $0.4{\mu}m$. The particles were composed of about 10nm sized primary particles. The agglomeration strength between the primary particles appears very weak considering that the spherical particles were broken into the primary particles during the pressing process. The particle shape, size, phase fraction and dopant content were analyzed and crystallization mechanism of spherical gel was discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.69-69
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.150-150
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• 1992

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.27.1-27
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• 2002