• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.327-328
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• 2006

본 연구에서는 0-3 타입의 압전 세라믹 - 고분자 복합소재를 제조하기 위해서 $Pb(Zr_{0.54}Ti_{0.48})O_3$ + 0.2 wt% $Cr_2O_3$ + 1 wt% $Nb_2O_5$ 조성을 기본 조성으로 하여, 세라믹-고분자 첨가량에 따른 복합소재의 전기적 특성과 여러 분극조건, 즉 분극온도, 분극시간, 분극전압 변화에 의한 압전 특성을 고찰하였다. 세라믹 첨가비율이 증가함에 따라 유전상수와 압전상수($d_{33}$)는 증가하였으며, 전압상수($g_{33}$)는 급격히 감소하는 경향을 보였으며, 분극시간과 분극전압도 전기적 특성에 영향을 주는 것을 확인하였다. 분극전압 5KV 인가한 고분자 15% 첨가한 복합 소재에서 유전상수 13, 압전상수 $d_{33}$ 23(${\ast}10^{-12}C/N$), 전압상수 $g_{33}$ 170($10^{-3}v.m/N$)의 우수한 특성을 나타내었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.

• Journal of Technologic Dentistry
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• v.43 no.4
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• pp.145-152
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• 2021

Purpose: This study aimed to produce resin prosthetics using a dental barrel finishing machine. For dental resin grinding, the ingredients of the barrel finishing media were analyzed, and surface residues of the resin were observed. Methods: Two types of barrel finishing media for dental resin grinding were tested. Specimens were made from thermal polymerized, auto polymerized, and photopolymerized resins. Finishing media were analyzed through energy-dispersive X-ray spectroscopy (EDS) component analysis and inductively coupled plasma-optical emission spectrometry (ICP-OES) component analysis. Then, the prepared specimen was barrel finished for 25 minutes using two types of barrel finishing media, and scanning electron microscope was photographed to observe the surface residues. Results: As a result of EDS component analysis, both types of finishing media were analyzed for the components of C, O, Zr and Al elements, and industry media (IM) was further analyzed for the components of Si and Mg elements. In the ICP-OES component analysis, Cd and As, which are harmful elements, were detected in IM, and no harmful elements were detected in manufacturing media (MM). Because of observation of surface residues, no residues were observed in the three types of resin specimens that were barrel finished with two types of finishing media. Conclusion: Surface residue wasn't observed on the specimens polished using two types of finishing media. However, in IM, Cd and As, which are harmful elements, were detected, making it inappropriate for clinical use. In MM, harmful elements were not detected; therefore, clinical use will be possible.

• Journal of Electrochemical Science and Technology
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• v.14 no.1
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• pp.85-95
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• 2023

In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li₇La₃Zr₂O₁₂, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10^-3 S cm^-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li⁺ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li⁺ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO₄ (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g^-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.50 no.2
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• pp.94-102
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• 2024

The exact mechanism of sialolith formation has yet to be determined. Recurrence of sialolithiasis is rare, affecting only 1%-10% of patients. The current study presents a case of recurrent stones that occurred twice on the right submandibular gland 6 months postoperative and 7 months after reoperation in a 48-year-old female patient. The stones were analyzed using histology, scanning electron microscopy, energy dispersive spectroscopy, and transmission electron microscopy (TEM). The first stone showed a three-layered structure with a poorly mineralized peripheral multilayered zone, highly mineralized middle layer, and the central nidus. The stones were composed of Ca, C, O, Cu, F, N, P, Si, Zn, and Zr. In TEM, compact bi-layered bacterial cell membrane was found on the peripheral layer and the central nidus of the stone as well as exosomes in the central nidus. The results demonstrated the essential components of sialolith formation, including bacteria, inflammatory exosomes, and exfoliated salivary epithelial cells that cooperatively underwent the pathogenetic progresses of central nidus formation, induction of compact zone calcification of the middle layer, and repeated subsequent deposition in the peripheral multilayer zone. The rapid recurrence could have resulted from residual pieces of a sialolith acting as the nidus of bacterial infection.

• Korean Journal of Food Science and Technology
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• v.35 no.1
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• pp.103-110
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• 2003

Stable production of fermented kanjang containing 1.8% (v/v) ethanol was obtained within four days using traditional kanjang containing 4% added glucose in packed-bed bioreactor systems filled with immobilized Zygosaccharomyces rouxii and Candida versatilis on porous alumina ceramic bead carrier at $28{\pm}0.5^{\circ}C$ and aeration rate of 0.05 vvm. Specific rates of alcohol production for Z. rouxii and C. versatilis were 0.0033 and 0.0031/day, respectively, and those of glucose consumption were both -0.0087/day in the batch type of alcoholic fermentation. In semi-continuous alcoholic fermentation at a dilution rate of 0.25/day, specific rates of alcohol production for Z. rouxii and C. versatilis were 0.0045 and 0.0029/day, and those of glucose consumption were -0.01 and -0.008/day, respectively, using identical bioreactor system. Similar specific rates of alcohol production were observed both in the batch or semi-continuous process and in the continuous one at the dilution rate of 0.25/day. Sensory characteristics of all alcoholic-fermented kanjang by Z. rouxii, C. versatilis, and a mixture of both yeasts (2:1, w/w) were shown to be significantly superior to those of home-made kanjang as revealed through organoleptic evaluation tests (p<0.05).

• Korean Journal of Medicinal Crop Science
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• v.7 no.3
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• pp.155-161
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• 1999

This study was carried out to develop the propagation system using in vitro induced- microtubers of yams (Dioscorea alata L.). Effects of kinds of media, mineral composition, sucrose concentration (0, 2, 4, 6, 8, 10%), photoperiod (0, 8, 12, 16, 24h), and growth regulators (NAA, IAA, ZR, JA-Me, ABA) on the development of microtubers, roots, and shoots in nodal stem segment cultures of D. alata L. were evaluated. Microtuberization in nodal stem segment occurred on all the media supplemented with growth regulator and sucrose. Among basic media, 1/2MS medium was the best in microtuber induction. NAA was shown to be the most effective among the growth regulators. Optimal NAA concentration was 1mg/l. The microtuberization was the highest at the concentration of 6% sucrose. When the nodal stem segment were cultured under darkness, the tuberization was increased markedly compared to those cultured under light condition. It was also noticeable that the culture in medium with NAA produced only microtubers and roots, but no shoots, in nodal segments. In this study, the optimal medium composition for microtuberization in nodal stem segment was found to be 1/2MS medium supplemented with 1mg/l NAA and 6% sucrose under dark condition at $25^{\circ}C$.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.