• Title/Summary/Keyword: Zr-2.5Nb

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HIGH TEMPERATURE OXIDATION OF NB-CONTAINING ZR ALLOY CLADDING IN LOCA CONDITIONS

  • Chuto, Toshinori;Nagase, Fumihisa;Fuketa, Toyoshi
    • Nuclear Engineering and Technology
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    • v.41 no.2
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    • pp.163-170
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    • 2009
  • In order to evaluate high-temperature oxidation behavior of the advanced alloy cladding under LOCA conditions, isothermal oxidation tests in steam were performed with cladding specimens prepared from high burnup PWR fuel rods that were irradiated up to 79 MWd/kg. Cladding materials were $M5^{(R)}$ and $ZIRLO^{TM}$, which are Nb-containing alloys. Ring-shaped specimens were isothermally oxidized in flowing steam at temperatures from 1173 to 1473 K for the duration between 120 and 4000s. Oxidation rates were evaluated from measured oxide layer thickness and weight gain. A protective effect of the preformed corrosion layer is seen for the shorter time range at the lower temperatures. The influence of pre-hydriding is not significant for the examined range. Alloy composition change generally has small influence on oxidation in the examined temperature range, though $M5^{(R)}$ shows an obviously smaller oxidation constant at 1273 K. Consequently, the oxidation rates of the high burnup $M5^{(R)}$ and $ZIRLO^{TM}$ cladding are comparable or lower than that of unirradiated Zircaloy-4 cladding.

A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

Fabrication and Characterization of piezoelectric thick films prepared by Screen Printing Method (Screen Printing법을 이용한 압전 후막의 제조 및 특성연구)

  • 김상종;최형욱;백동수;최지원;윤석진;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.873-876
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    • 2000
  • Characteristics of piezoelectric thick films prepared by screen printing method were investigated. The piezoelectric thick films were printed using Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$system. The lower electrodes were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited with Pt by sputtering on Ag-Pd. The ceramic paste was prepared by mixing powder and binder with various ratios using three roll miller. The fabricated thick films were burned out at 650$^{\circ}C$ and sintered at 950$^{\circ}C$ in the O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20 $\mu\textrm{m}$ and the Ag-Pd electrode acted as a diffusion barrier above 3 $\mu\textrm{m}$ thickness. When the lower electrode Ag-Pd was 6 $\mu\textrm{m}$ and the piezoelectric thick films were sintered by 2nd step (650$^{\circ}C$/20min and 950$^{\circ}C$/1h) using paste mixed Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$$.$ MnO$_2$+ Bi$_2$O$_3$. V$_2$O$\_$5/ and binder in the ratio of 70:30, the remnant polarization of thick film was 9.1 ${\mu}$C /cm$^2$.

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Mineralogy and Mineral-chemistry of REE Minerals Occurring at Mountain Eorae, Chungju (충주 어래산 일대에서 산출하는 희토류 광물의 광물학적 및 광물화학적 특성)

  • You, Byoung-Woon;Lee, Gill Jae;Koh, Sang Mo
    • Economic and Environmental Geology
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    • v.45 no.6
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    • pp.643-659
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    • 2012
  • The Chungju Fe-REE deposit is located in the Kyemyeongsan Formation of the Ogcheon Group. The Kyemyeongsan Formation includes meta-volcanic rocks and pegmatite hosted REE deposit which show different kind of REE-containing minerals. The meta-volcanic rocks hosted REE deposits' main REE minerals are allanite, zircon, apatite, and sphene, whereas the pegmatite hosted REE deposits is mainly composed of fergusonite, and karnasurtite, zircon, thorite. The meta-volcanic rock hosted major REE mineral is allanite as the form of aggregation and contains 23.89-29.19 wt% TREO (Total Rare Earth Oxide), 4.71-9.92 wt% $La_2O_3$, 11.30-14.33 wt% $Ce_2O_3$, 0.11-0.29 wt% $Y_2O_3$, 0.15-0.94 wt% $ThO_2$, as a formula of (Ca, Y, REE, Th)$_{2.095}$(Mg, Al, Ti, Mn, $Fe^{3+})_{2.770}(SiO_4)_{2.975}(OH)$. Accompanying REE in a coupled substitution for $Ca^{2+}$ (M1 site) and $Al^{3+}-Fe^{2+}$ (M2 site) leads to a large chemical variety. Due to the allanite's high contents of Fe, it belongs to Ferrialanite. The pegmatite hosted deposit's domi-nant REE mineral is fergusonite as prismatic or subhedral grains associated with zircon, fluorite and karnasurtite. Geochemical composition of the fergusonite($YNbO_4$) suggests substitution of Y-REE and Y-Th in A-site, and Nb-Ta-Ti in B-site, furthermore the proportion of $Y_2O_3$ and $Nb_2O_5$ is oddly 1:1.5 comparing to the ideal ratio 1:1 and Nb is higher than Y, also A-site Y actively substitutes with REE. Karnasurtite in pegmatite variously ranges 9.16-22.88 wt% $Ce_2O_3$, 2.15-9.16 wt% and $La_2O_3$, 0.44-10.8 wt% $ThO_2$, as a calculated formula (Y, REE, Th, K, Na, Ca)$_{1.478}(Ti, Nb)_{1.304}$(Mg, Al, Mn, $Fe^{3+})_{0.988}$(Si, P)$_{1.431}O_7(OH)_4{\cdot}3H_2O$. Firstly the 870-860 Ma is the initial age of the supercontinent Rhodinia dispersal and subsequent A-1 type volcanism, which contains Fe, REE, and HFS(High Field Strength elements; Nb, Zr, Y etc.) elements in Fe-rich meta-volcanic rocks dominant Kyemyeongsan Formation, might mineralized allanite. Another synthesis is that regional metamorphism at late Paleozoic 300-280 Ma(Cho et al., 2002) might cause allanite mineralization. Also pegmatite REE mineralization highly related to the granite intrusion over the Chungju area in Jurassic(190 Ma; Koh et al., 2012). Otherwise above all, A-1 type volcanism at the same time of the Kyemyeongsan Formation development, regional metamorphism and pegmatite, might have caused REE mineralization. Although REE ore bodies display a close spatial association, each ore bodies display temporal distinction, different mineral assemblage and environment of ore formation.

THE EFFECT OF PROCESSING PARAMETTERS ON THE MAGNETIC PROPERTIES OF Mn-Zn FERRITE FOR SMPS

  • Suk, J.H.;Jung, K.K.;Shon, H.J.;Hur, W.D.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.610-613
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    • 1995
  • The effect of processing parameters such as milling, additives and sintering atmoshpere on the magnetic properties of Mn-Zn ferrite was investigated. The experiment was followed by general ceramic fabrication process and added additives were $CaCO_{3}$, $SiO_{2}$, $V_{2}O_{5}$, $ZrO_{2}$, and $Nb_{2}O_{5}$. The effects of additives could be divided into three categories which were formation ofliquid phase, substitution in lattice and inducing stress. Core loss smong the magnetic properties was dependent mainly on the additives and also correlated with processing parameters. As a result, an optimum condition of preparing process for a high quality Mn-Zn ferrite was suggested by controlling the correlation of each processing parameters.

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Piezoelectrc Transformer Properties of Piezoelectrc Transformer by PNW-PMN-PZT ceramic system (PNW-PMN-PZT 소결체를 이용한 압전트랜스 특성 평가)

  • Ryu, Sung-Lim;Woo, Duck-Hyun;Lee, Myeong-Woo;Lee, Youn-Ki;Lee, Eun-Hee;Kwon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.218-218
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    • 2008
  • 최근 미관을 위하여 소형 네온관 등이 사용되고 있다. 따라서 네온관 등 구동에 사용되는 인버터는 안정기 역할을 하면서 소형화와 경량화가 중요한 요소이다. 본 연구는 압전 특성이 우수한 PZT계 세라믹스 조성인 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$에 특성 향상을 위해 PbO, $Fe_2O_3$, $CeO_2$, Xwt% $Nb_2O_5$ 조성별로 첨가하였으며 그에 따른 유전, 압전 특성을 조사하고 또한 Rosen type의 압전 트랜스포머를 제작하여 각 조성별 변환효율을 측정하였다. 실험방법은 일반적인 세라믹스 제조공정으로 파우더 혼합 후 24시간 ball milling하고 $850^{\circ}C$ 에서 2시간 하소 후 $1230^{\circ}C$에서 2시간 소결하였다. 또한 최종 소결 시편을 이용하여 Rosen type의 압전 트랜스포머를 제작하였다. 상 분석을 위해 XRD를 이용하여 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하기 위해 압전 $d_{33}$ Meter를 사용하였으며, Impedence analyzer HP 4194A를 이용하여 전기적 특성을 측정하였다.

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Design of Piezoelectric Acoustic Transducer (압전세라믹 발음체의 설계)

  • 홍성원
    • Journal of the Microelectronics and Packaging Society
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    • v.2 no.1
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    • pp.69-75
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    • 1995
  • 압전세라믹스를 제조하여 발음체 소자의 두께 직경등의 칫수 변화에 따른 압전발을 체 소자의 전기적 특성 및 압전세라믹스와 금속진동판의 상관관계를 조사하고 공명용 수지 case등을 고려하여 공진 주파수에서 효율좋은 음을 발생시킬수 있는 압전발음체를 설계하였 다. 본 실험에서 사용딘 압전세라믹스 (Pb0.95Sr0.05)(Zr0.53Ti0.47)O3+0.8wt%Nb2O5의 특성은 전 기기계 결합계수(KP)가 69%이며 기계적 품질계수(Qm)은 87 비유전율은 2100 tan$\delta$는 0.016이었다. 금속진동판의 공진주파수는 사용되는 재료의 stiffness와 관계가 있고 주파수 -impedance 특성은 재질의 음속, 밀도, Young율 등에 크게 의존하였다. 주파수 대역 2.0~ 2.2khz에서 공진시키기 위한 공명체의 설계에서 압전세라믹스의 외경과 두께가 각각 14mm, 0.1mm 이고 금속진동판의 그것이 각각 20mm, 0.1mmdlfEo 공명기는 방음공의 직경이 3.0mm, cavity의 직경이 18.5mm, cavity의 높이가 4.5mm의 구조로 설계되었을때가 최적조 건이었다.

The Effect of Piezoelectric Ceramic for Properties Improvement at Electrostriction Ceramic (Actuator용 전왜재료의 특성개선을 위한 압전재료의 첨가효과)

  • 이수호;조현철;김한근;손무현;사공건
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.206-210
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    • 1997
  • In the fields of the optics, precise machine, semiconductors, the micro-positioning actuators are required for the control of position in the submicron range. PNN-P2N-PZT ceramics were fabricated with various mole ratio of the PZT[Pb(Zr$_{1}$2//Ti$_{1}$2)O$_3$]. PNN (Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$]and PZN[Pb(Zn$_{1}$3//Nb/sbu 2/3/)O$_3$] powders prepared by double calcination and PZT powders prepared by molten- salt synthesis method. The relative permittivity of specimen with PZT 0.3 mole ratio was shown 5,320 and appeared the relaxor ferroelectric feature. The maximum Piezoelectric coefficient d$_{31}$ to be used for evaluation the displacement of piezoceramics in PNN-PZN-PZT ceramics was 324$\times$10$^{-12}$ (C/V) at the vicinity of morphotropic phase boundary and was larger than that of solid PZT ceramics(120$\times$10$^{-12}$ C/V).

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Preparation and Properties of Ru based Thick Film Resistors (Ru 계 후막저항체의 제조 및 특성 연구)

  • 김창은
    • Journal of the Microelectronics and Packaging Society
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    • v.2 no.1
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    • pp.19-28
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    • 1995
  • RuO2 함량을 각각 달리한 pyrochlore 구조의 Pb2Ru2O6.5분말을 제조하여 이 분말과 유기 vehicle 유기용매를 혼합하여 저항 페이스트를 제조한후 인쇄, 소결과정을 거쳐 전반적 인 물성을 분석하였고 두 종류의 페이스트에 TCR보정용 첨가제로서 ZrO2를 첨가한 경우 처가량에 따라 저항값은 크게 변화하였으나 TCR 은 약간의 변화를 보였으며 Nb2O5의 경우 저항값이 크게 증가하였으며 TCR은 2wt%까지 첨가시 매우 안정적인 값을 나타내었다. 고 정항의 경우 CuO의 첨가시 저항값이 크게 감소 하였으며 TCR은 첨가량에 따라 증가하였 으나 3wt%이상 첨가시 저항체 표면이 심하게 거칠어지는 결과를 보였다.

Effect of flux on low temperature sintering for PNN-PT-PZ piezoelectric ceramics (PNN-PT-PZ계 압전세라믹스의 저온소결에 미치는 flux의 영향)

  • 이기태;남효덕
    • Electrical & Electronic Materials
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    • v.6 no.6
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    • pp.537-544
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    • 1993
  • 기본조성이 0.5[Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_{3}$]-0.5[0.65PbTiO$_{3}$ -0.35PbZrO$_{3}$] (PNN-PT-PZ)인 압전세라믹스를 NaCl-KCI를 사용한 flux의 양 및 소결온도에 따른 생성반응과 소결특성, 유전 및 압전특성을 조사하였다. 이때 1몰의 산화물에 대한 flux의 양은 0.1, 2 및 5mole로 하였으며 소결온도는 1000-1200.deg.C로 하였다. 본 연구의 flux법은 고상반응법에 비해 낮은 하소온도에서 pyrochlore상을 현저히 줄일수 있었으며 고상반응법보다 낮은 온도에서 치밀화가 이루어질뿐 아니라 유전 및 압전특성을 개선할 수 있었으며 소결온도도 낮출 수 있었다. Flux의 양이 증가할수록 결정의 입성장이 빨랐으며 유전 및 압전특성이 가장 좋은 flux의 첨가량의 조건은 1mole이었다.

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