• Transactions of Materials Processing
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• v.18 no.6
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• pp.500-507
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• 2009

Tensile deformation behavior with different strain rate was investigated. $Zr_{56.2}Ti_{13.8}Nb_{5.0}Cu_{6.9}Ni_{5.6}Be_{12.5}$(bulk metallic glass alloy possessed crystal phase which was called $\beta$-phase of dendrite shape, mean size of $20{\sim}30{\mu}m$ and occupied 25% of the total volume) was used in this study. Maximum tensile strength was obtained as 1.74GPa at strain rate $10^2s^{-1}$ and minimum strength was found to be 1.6GPa at $10^{-1}s^{-1}$. And then, maximum plastic deformation occurred at the strain rate of $5{\times}10^{-2}s^{-1}$ and represented 1.75%, though minimum plastic deformation showed 0%. In the specific range of strain rate, relatively higher plastic deformation and lower ultimate tensile strength were found with lots of shear bands. The fractographical observation after tensile test indicated that vein like pattern on the fracture surface was well developed especially in the above range of strain rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.116-124
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• 2024

In this study, we investigated the microstructure and piezoelectric properties of 0.96(K_0.456Na_0.536)Nb_0.95Sb_0.05-0.04Bi_0.5(Na_0.82K_0.18)_0.5ZrO₃ (KNNS-BNKZ) ceramics based on one-step and two-step sintering processes. One-step sintering led to significant abnormal grain (AG) growth at temperatures above 1,085 ℃. With increasing sintering temperature, piezoelectric and dielectric properties were enhanced, resulting in a high d₃₃ = 506 pC/N for one-step specimen sintered at 1,100 ℃ (one-step 1,100 ℃ specimen). However, for one-step 1,115 ℃ specimen, a slight decrease in d₃₃ was observed, emphasizing the importance of a high tetragonal (T) phase fraction for superior piezoelectric properties. Achieving a relative density above 84 % for samples sintered by the one-step sintering process was challenging. Conversely, two-step sintering significantly improved the relative density of KNNS-BNKZ ceramics up to 96 %, attributed to the control of AG nucleation in the first step and grain growth rate control in the second step. The quantity of AG nucleation was affected by the duration of the first step, determining the final microstructure. Despite having a lower T phase fraction than that of the one-step 1,100 ℃ specimen, the two-step specimen exhibited higher piezoelectric coefficients (d₃₃ = 574 pC/N and k_p = 0.5) than those of the one-step 1,100 ℃ specimen due to its higher relative density. Performance evaluation of magnetoelectric composite devices composed of one-step and two-step specimens showed that despite having a higher g₃₃, the magnetoelectric composite with the one-step 1,100 ℃ specimen exhibited the lowest magnetoelectric voltage coefficient, due to its lowest k_p. This study highlights the essential role of phase fraction and relative density in enhancing the performance of piezoelectric materials and devices, showcasing the effectiveness of the two-step sintering process for controlling the microstructure of ceramic materials containing volatile elements.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.102.1-102
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• 2003

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.20-25
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• 1997

In this study, piezoelectric actuator samples were fabricated using 0.375PMN-0.37OPT-0.255PZ system ceramics with Barium substitution and the strain properties of them were investigated. Dielectric constant of the specimens increased with the increase of Ba content up to 5mol% and decreased with futher addition of Ba. The largest piezoelectric coefficient and electromechanical coupling coefficient were observed at the sintering temperature of 1250'C and Barium content of 5mol%. The characteristics of strain hysteresis was found largely with varing the sintering temperature on the single round type, and the strain is proportional to piezoelectric coefficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.60-64
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• 1990

In this studies, structural, dielectrical piezoelectrical properties and temperature stability of 0.05Pb(Pb($Mg_{1/3}Nb_{2/3}$)$O_3$+ 0.95Pb($Zr_{0.53}Tio_{0.47}$)$O_3$+$\alpha$[wt%] $Cr_2O_3$ piezoelectric ceramics fabricated by the Hot-Press method were investigated. And Poisson ratios of the specimens were measured in order to see that they can be used as the substrates for energy-trapped devices. The specimens of which Poisson ratio was more than 3/1 had the $\alpha$ range 0.3~0.75, and piezoelectric properties were degraded in the range $\alpha$$\geq$0.75, and temperature stability was good in the $\alpha$ range 0.5~0.75. Accordingly, the optimal point of $Cr_2O_3$ additive weight is sure to be in the vicinity of 0.5[wt%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.25-33
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• 1994

Temperature dependences of the remanent polarization $P_{\gamma}$/(T), effective birefringence ㅿｎ(T). dielectric constant K(T) and quadratic electro-optic coefficient R(T) of the two-stage sintered xBa(La$_{1/2}$Nb$_{1/2}$)O$_3$Pb$(Zr_{y}Ti_{1-y})O-{3}$(x=0.085, 0.09, 0.40$\leq$y$\leq$0.70)ceramics were investigated. Increasing the PbZrO$_3$ contents, the crystal structure of a specimen was varied from tetragonal and rhombohedral to cubic, and the phase transition was showed a diffuse phase transition(DPT) characteristics. Especially. in the compositions which located on the PE-FE phase boundary were showed a discrepancy between curie temperature and temperature range which a macroscopic polarization and a effective birefringence were disappeared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1174-1177
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• 2004

The dielectric and piezoelectric properties of silver added 0.96 Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$-0.04 Pb(Mn,W,Sb,Nb)$_3$ ceramics were examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of silver addition on PZT-PMWSN ceramics was investigated at various sintering temperature(900, 1000, 1100 $^{\circ}C$). As increasing silver contents, the relative dielectric constant was increased and sinterability was enhanced. At the specimen with 0.4 mol% Ag and sintered at 1000 $^{\circ}C$, electromechanical coupling factor( $k_{p}$), mechanical quality factor( $Q_{m}$), dielectric constant($\varepsilon$$_{r}$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results showed that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and sintering temperature was lowered.red.

• The Journal of the Petrological Society of Korea
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• v.27 no.1
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• pp.37-47
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• 2018

Volcanic ash samples of historical eruptions from Mt. Baekdu were analyzed for major oxides, trace and rare earth elements by a variety of analytical techniques. The results indicate that the ashes consist of approximately 58.8~71.1 wt.% $SiO_2$, 9.6~16.8 wt.% $Al_2O_3$, 4.5~6.9 wt.% $Fe_2O_{3t}$, 0.1~1.7 wt.% MgO, 0.3~1.6 wt.% CaO, 5.2~6.3 wt.% $Na_2O$, 4.3~5.9 wt.% $K_2O$ and less than 1.2 wt.% $TiO_2$. Thirty two trace metals including Ba, Cu, Cr. Co, Ni, Sr, V, Zn, and Zr were analyzed. The ashes can be divided two groups: group A(1 ka Millennium pumice, 1668 and $190{\underline{3}}$ pumice) and group B(1702 pumice) according to the relative enrichment of HREEs. The abundances of heavy metals such as Cu, Co, Mn, and Zn were relatively low. As compared to the Sakurajima volcanic ash, Baekdusan volcanic ash has low concentrations of Y, Nb, Pb, U, Sc, V, Ni and Cu and high concentrations of Zr, Ba, Hf, Cr, Co, Zn and rare-earth (except Eu).