• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.535-536
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• 2008

Multi-layered thin films of ZnS/$Na_3AlF_6$/ZnS/Cr were deposited on glass substrate by evaporation process. ZnS and $Na_3AlF_6$ were selected as high and low refractive index material, and additionally Cr was chosen as mid reflective layer respectively. The multi-layered thin films were prepared in terms of different optical thickness and different staking sequence and layers. The optical properties were systematically characterized with different optical thickness of $Na_3AlF_6$ especially $0.25\lambda$ and $0.5\lambda$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}$, the ZnS/$Na_3AlF_6$/ZnS/Cr multi-layered thin film shows purple colour range in $0.25\lambda$， bluish green in $0.5\lambda$, red purple in $0.75\lambda$, and purple in $1.0\lambda$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.500-501
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• 2005

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

• Journal of the Korean institute of surface engineering
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• v.46 no.3
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• pp.105-110
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• 2013

ZnS thin films were prepared on glass substrate by using chemical bath deposition method. The influence of ammonia ($NH_4OH$) and $Na_2EDTA$ ($Na_2C_{10}H_{16}N_2O_8$) as complexing agents on structural and optical properties of ZnS thin films were investigated. Zinc acetate dihydrate ($Zn(CH_3COO)_2{\cdot}2H_2O$) and thiourea ($H_2NCSNH_2$) were used as a starting materials and distilled water was used as a solvent. All ZnS thin films, regardless of a kind of complexing agents, had the hexagonal structure (${\alpha}$-ZnS) and had a preferred <101> orientation. ZnS thin films, with 4 M ammonia and with 4 M ammonia and 0.1 M $Na_2EDTA$, had the highest <101> peak intensity. In addition, their average particle size are 280 nm and 220 nm, respectively. The average optical transmittances of all films were higher than 60% in the visible range. The optical direct band gap values of films were about 3.6~3.8 eV.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.649-656
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• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.7
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• pp.795-800
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• 2005

The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.7-12
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• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• Journal of Sensor Science and Technology
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• v.30 no.3
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• pp.148-153
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• 2021

During the manufacture of a ZnS lens with excellent transmittance in the mid-infrared region (3-5 ㎛) by the hot-press process, a single-layer sintering method is used in which one lens is manufactured in one process. Additional research is required to improve this single-layer sintering method because of its low manufacturing efficiency. To solve this problem, the variation in optical properties of ZnS lenses with change in sintering temperature was investigated by introducing a Stack sintering method that can sinter multiple lenses simultaneously. A carbon paper was placed between the molded lenses and sintered into five layers. The average permeability of 67% at medium infrared wavelengths of 3-5 ㎛ was excellent under the following sintering conditions: pressure of 50 MPa and temperature of 850℃. This value is 1% less than the average permeability in the case of single-layer sintering of the ZnS lens. It was confirmed that the stack sintering method developed in this study can be used to manufacture a large number of lenses with excellent characteristics in a single process.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Applied Microscopy
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• v.27 no.3
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.