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http://dx.doi.org/10.5695/JKISE.2013.46.3.105

Influence of Ammonia and Na2EDTA on Properties of Chemical Bath Deposited ZnS Thin Films  

Kim, Gwan-Tae (School of Materials Science and Engineering, Dept. of Electronic Materials Science and Engineering, Kyungpook National University)
Lee, Hae-Ki (School of Materials Science and Engineering, Dept. of Electronic Materials Science and Engineering, Kyungpook National University)
Park, Byung-Ok (School of Materials Science and Engineering, Dept. of Electronic Materials Science and Engineering, Kyungpook National University)
Publication Information
Journal of the Korean institute of surface engineering / v.46, no.3, 2013 , pp. 105-110 More about this Journal
Abstract
ZnS thin films were prepared on glass substrate by using chemical bath deposition method. The influence of ammonia ($NH_4OH$) and $Na_2EDTA$ ($Na_2C_{10}H_{16}N_2O_8$) as complexing agents on structural and optical properties of ZnS thin films were investigated. Zinc acetate dihydrate ($Zn(CH_3COO)_2{\cdot}2H_2O$) and thiourea ($H_2NCSNH_2$) were used as a starting materials and distilled water was used as a solvent. All ZnS thin films, regardless of a kind of complexing agents, had the hexagonal structure (${\alpha}$-ZnS) and had a preferred <101> orientation. ZnS thin films, with 4 M ammonia and with 4 M ammonia and 0.1 M $Na_2EDTA$, had the highest <101> peak intensity. In addition, their average particle size are 280 nm and 220 nm, respectively. The average optical transmittances of all films were higher than 60% in the visible range. The optical direct band gap values of films were about 3.6~3.8 eV.
Keywords
ZnS thin film; Chemical bath deposition; Ammonia; $Na_2EDTA$;
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  • Reference
1 D. Hariskos, S. Spiering, M. Powalla, Thin Solid Films, 480 (2005) 99.
2 D. A. Johnston, M. H. Carletto, K. T. R. Reddy, I. Forbes, R. W. Miles, Thin Solid Films, 403 (2002) 102.
3 A. Goudarzi, G. M. Aval, R. Sahraei, H. Ahmadpoor, Thin Solid Films, 516(15) (2008) 4953.   DOI   ScienceOn
4 V. L. Gayou, B. Salazar-Hernandez, M. E. Constantino, E. Rosendo Andres, T. D Laz, R. Delgado Macuil, M. Rojas Lopez, Vacuum, 84 (2010) 1191.   DOI   ScienceOn
5 B. Elidrissi, M. Addou, M. Regragui, A. Bougrine, A. Kachouane, J. C. Bernede, Mater. Chem. Phys., 68 (2001) 175.   DOI   ScienceOn
6 Z. Z. Zhang, D. Z. Shen, J. Y. Zhang, C. X. Shan, Y. M. Lu, Y. C. Liu, B. H. Li, D. X. Zhao, B. Yao, X. W. Fan, Thin Solid Films, 513(1-2) (2006) 114.   DOI   ScienceOn
7 J. W. Lee, S. W. Lee, S. Y. Cho, S. T. Kim, I. Y. Park, Y. D. Choi, Mater. Chem. Phys., 77(1) (2002) 254.
8 J. W. Lee, S. C. Lim, M. S. Kwak, I. Y. Park, S. T. Kim, Y. D. Choi, J. of the Kor. Association of Crystal Growth, 10(3) (2000) 199.
9 J. Cheng, D. B. Fan, H. Wang, B. W. Liu, Y. C. Zhang, H. Yan, Semicond. Sci. Technol., 18 (2003) 676.   DOI   ScienceOn
10 J. Ihanus, M. Ritala, M. Leskela, T. Prohaska, R. Resch, G. Friedbacher, M. Grasserbauer, Appl. Surf. Sci., 120 (1997) 43.   DOI   ScienceOn
11 C. Y. Yeh, Z. W. Lu, S. Froyen, A. Zunger, Phys. Rev. B, 46(16) (1992) 10086.   DOI   ScienceOn
12 Z. Y. Zhong, E. S. Cho, S. J. Kwon, Mater. Chem. Phys., 135 (2012) 287.   DOI   ScienceOn
13 O. L. Arenas, M. T. S. Nair, P. K. Nair, Semicond. Sci. Tech., 12 (1997) 1323.   DOI   ScienceOn