• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Journal of Powder Materials
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• v.20 no.5
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• pp.371-375
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• 2013

ZnO nanoparticles in the size range from 5 to 15 nm were prepared by zinc-lithium-acetate system. The morphologies and structures of ZnO were characterized by TEM, XRD and FT-IR spectra. UV-visible results shows that the absorption of ZnO nanoparticles is blue shifted with decrease in particles size. Furthermore, photoluminescence spectra of the ZnO nanoparticles were also investigated. The ZnO nanoparticles have strong visible-emission intensity and their intensities depend upon size of ZnO nanoparticles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.43-49
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• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at 1380$^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15∼40 nm width and 10-70 $\mu\textrm{m}$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along [110] direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.651-657
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• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at $1380^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15~40nm width and 10~70 $\mu m$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along ［110］ direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.301-307
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• 2014

We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.362-367
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• 2005

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.