• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.127-134
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• 2016

A series of Ce-doped ZnO (Ce/ZnO) nanostructures were fabricated using the co-precipitation method, then a simply nontoxic hydrothermal approach was proposed for preparation of reduced graphene oxide (rGO)-Ce/ZnO composites. The synthesized composites were investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectroscopy (PL), electrochemical impedance spectroscopy (EIS), UV-vis diffuse reflectance spectroscopy (DRS) techniques and Raman pattern. The as-synthesized rGO-Ce/ZnO composites showed high photodecomposition efficiency in comparison with the rGO-ZnO, Ce/ZnO, pure ZnO under UV, visible-light and sunlight irradiation. The degradation of methylene blue (MB) (10 mg/L, 100ml) by 95.8% within 60 min by using rGO-2 (10 mg) under sunlight irradiation was observed. The repeated use of the rGO-2 was investigated, and the results showed almost no decay in the catalytic activity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.45-45
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• 2009

우리는 ZnO Template를 사용한 열기상법을 이용하여 수직 배양한 ZnO nanorods와 ZnO Nanopencils를 성장하였고, Dependency temperature Photoluminescence(PL)의 분석을 통하여 광학적 특성에 대해 분석을 하였다. ZnO 나노구조는 100K 이하의 온도에서 donor-bound exciton가 dominant하고, 100K 이상의 온도에서는 free exciton과 그들의 phonon-replica emission이 dominant한 것을 알 수 있었다. 하지만, ZnO nanorods와 nanopencils은 다른 exciton-phonon coupling의 strength에 의한 surface defects에 의해 excitonic emissions의 다른 거동을 보이는 것을 알았다. 이것으로 인해 상온 PL에서 ZnO nanopencil은 nanorods에 비해 52meV의 red shift를 보였다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.35.1-35.1
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• 2011

수열합성법으로 제작된 ZnO 나노와이어는 저온 MBE (Molecular Beam Epitaxy) 방식과 달리 Ti, Au와 같은 촉매로 부터 성장이 끝난뒤 나노와이어 끝에 남는 촉매를 제거해야할 필요가 없으며, 저온에서 합성이 가능하기 때문에 현재 연구가 많이 되고 있는 방법중에 하나이다. 본 연구에서는 수열 합성법을 이용하여 금속촉매 또는 AZO로 seed를 형성한 후 기판 위에 균일한 크기의 ZnO 나노막대를 성장시키고 성장밀도 및 길이의 간편한 제어를 하였다. 이를 위해 계면활성제인 PEI (Polyethyleneimine) 첨가 및 Chloride ($Cl_-$)를 조절하여 ZnO 나노와어의 성장밀도를 조절 하고자 하였다. 실험방법으로는 전구체인 Zn(NO3)2${\cdot}$6H2O와 HMT에 Chloride 계열인 Ammonium chloride 와 Kcl 의 몰농도를 각각 조절하고 PEI를 첨가하여, ZnO 나노와이어를 성장하였다. 성장된 ZnO 나노와이어의 특성을 평가하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 광학적인 특성을 측정하였으며, 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 또한 scanning PL 장비를 통해 photoluminescence양을 측정하고 ZnO 나노와이어의 응용 가능성을 평가하였다.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• 한국진공학회지
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• 제22권1호
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• pp.7-12
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• 2013

원자층 증착법을 이용하여 서로 다른 양자우물 폭을 갖는 ZnO-ZnMgO 양자우물들을 제작하였다. 제작된 시료들은 양자우물 폭에 따라 서로 다른 광전이 특성을 나타내는데 우물 폭이 1.5 nm인 시료의 경우 후 열처리에 따른 Mg의 확산에 따라 양자화된 에너지 준위가 형성되지 않았고 이보다 더 넓은 폭을 갖는 시료들의 경우 양자화된 준위의 광전이를 보임을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제28권9호
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• pp.1457-1462
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• 2007

A simple and facile sonochemical route was described for the fabrication of diameter-controlled ZnO nanorod arrays on Si wafers. The diameter of ZnO nanorods was controlled by the concentration of zinc cations and hydroxyl anions in aqueous precursor solution. At high concentration of the precursor solution, thick ZnO nanorod arrays were formed. On the contrary, thin ZnO nanorod arrays were formed at low concentration of the precursor solution. The average diameter of ZnO nanorods varies from 40 to 200 nm. ZnO nanorod arrays with sharp tip were also fabricated by the step-by-step decrease in precursor solution concentration. The crystal structure and optical characteristics of ZnO nanorods were investigated by transmission electron microscopy, X-ray diffraction, and photoluminescence spectroscopy. Growth mechanism of ZnO nanorod arrays was also proposed.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.