• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.452-452
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• 2013

ZnO is one of the most attractive transparent conductive oxide (TCO) films because of low toxicity, a wide band gap material and relatively low cost. However, the electrical conductivity of un-doped ZnO is too high to use it as TCO films in practical application. To improve electrical properties of undoped ZnO, transition metal (TM) doped ZnO films such as Al doped ZnO or Ti doped ZnO have been extensively studied. Here, we prepared Ti doped ZnO thin films by atomic layer deposition (ALD) for the application of TCO films. ALD was used to prepare Ti-doped ZnO thin films due to its inherent merits such as large area uniformity, precise composition control in multicomponent thin films, and digital thickness controllability. Also, we demonstrated that ALD method can be utilized for fabricating highly ordered freestanding nanostructures of Ti-doped ZnO thin films by combining with BCP templates, which can potentially used in the photovoltaic applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.37.2-37.2
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• 2011

The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure. Vertically aligned ZnO nanorods were grown on c-plane sapphire substrate at $600^{\circ}C$ and 400 Torr. ZnO film was then formed in-situ on the ZnO nanorods at $600^{\circ}C$ and 10 Torr. High-resolution X-ray diffraction and transmission electron microscopy measurements showed that the ZnO film on the nanorods/sapphire grew epitaxially, and that the ZnO film/nanorods hybrid structures had well-ordered wurtzite structures. The hybrid ZnO structure was shown to be about 5 ${\mu}m$ by field-emission scanning electron microscopy. The hybrid structure showed better crystalline quality than mono-layer film on sapphire substrate. Consequently, purpose of this work is developing high quality hybrid epi-growth technology using nano structure. These structures have potential applicability as nanobuilding blocks in nanodevices.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.58-61
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• 2006

Carefully designed ZnO nanowire-film hybrid nanostructure, composed of a bottom ZnO film, ZnO nanowire arrays, and a top ZnO film, was consecutively fabricated by adjusting the supersaturation conditions using a metal-organic chemical vapor deposition (MOCVD) to utilize the vertically aligned ZnO nanowires as the oxygen sensors. The decrease of current flow through ZnO nanowire arrays increasing oxygen pressure showed the high potential for the application of the ZnO hybrid nanostructure to the oxygen sensors. In addition, it was confirmed that the oxygen sensing characteristics of this hybrid nanostructure were attributed to the defects near the surface of the nanowires.

• Journal of Powder Materials
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• v.22 no.6
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.434.2-434.2
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• 2014

We observe enhanced pH response of solution-gated field-effect transistors (SG-FET) having 1D-2D hybrid channel of vertical grown ZnO nanorods grown on CVD graphene (Gr). In recent years, SG-FET based on Gr has received a lot of attention for biochemical sensing applications, because Gr has outstanding properties such as high sensitivity, low detection limit, label-free electrical detection, and so on. However, low-defect CVD Gr has hardly pH responsive due to lack of hydroxyl group on Gr surface. On the other hand, ZnO, consists of stable wurtzite structure, has attracted much interest due to its unique properties and wide range of applications in optoelectronics, biosensors, medical sciences, etc. Especially, ZnO were easily grown as vertical nanorods by hydrothermal method and ZnO nanostructures have higher sensitivity to environments than planar structures due to plentiful hydroxyl group on their surface. We prepared for ZnO nanorods vertically grown on CVD Gr (ZnO nanorods/Gr hybrid channel) and to fabricate SG-FET subsequently. We have analyzed hybrid channel FETs showing transfer characteristics similar to that of pristine Gr FETs and charge neutrality point (CNP) shifts along proton concentration in solution, which can determine pH level of solution. Hybrid channel SG-FET sensors led to increase in pH sensitivity up to 500%, compared to pristine Gr SG-FET sensors. We confirmed plentiful hydroxyl groups on ZnO nanorod surface interact with protons in solution, which causes shifts of CNP. The morphology and electrical characteristics of hybrid channel SG-FET were characterized by FE-SEM and semiconductor parameter analyzer, respectively. Sensitivity and sensing mechanism of ZnO nanorods/Gr hybrid channel FET will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.164.2-164.2
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• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.1-490.1
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• 2014

The ZnO nanowire (NW)-based nanogenerators (NGs) can have rectifying current and potential generated by the coupled piezoelectric and semiconducting properties of ZnO by variety of external stimulation such as pushing, bending and stretching. So, ZnO NGs needed to enhance durability for stable properties of NGs. The durability of the metal electrodes used in the typical ZnO nanogenerators(NGs) is unstable for both electrical and mechanical stability. Indium tin oxide (ITO) is used as transparent flexible electrode but because of high cost and limited supply of indium, the fragility and lack of flexibility of ITO layers, alternatives are being sought. It is expected that carbon nanotube and Ag nanowire conductive coatings could be a prospective replacement. In this work, we demonstrated transparent flexible ZnO NGs by using CNT/Ag nanowire hybrid electrode, in which electrical and mechanical stability of top electrode has been improved. We grew vertical type ZnO NW by hydrothermal method and ZnO NW was coated with hybrid silicone coating solution as capping layer to enhance adhesion and durability of ZNW. We coated the CNT/Ag nanowire hybrid electrode by using bar coating system on a capping layer. Power generation of the ZnO NG is measured by using a picoammeter, a oscilloscope and confirmed surface condition with FE-SEM. As a results, the NGs using the CNT/Ag NW hybrid electrode show 75% transparency at wavelength 550 nm and small change of the resistance of the electrode after bending test. It will be discussed the effect of the improved flexibility of top electrode on power generation enhancement of ZnO NGs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.1207-1208
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• 2011

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.257-260
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• 2010

Zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were prepared by the use of injector type atomic layer deposition. Two hybrid gate oxide systems of different polarity polymers with silicon oxide were examined with the aim of improving the properties of the transistors. The mobility and threshold voltage of a ZnO TFT with a poly(4-dimethylsilyl styrene) (Si-PS)/silicon oxide hybrid gate dielectric had values of 0.41 $cm^2/Vs$ and 24.4 V, and for polyimide/silicon oxide these values were 0.41 $cm^2/Vs$ and 24.4 V, respectively. The good hysteresis property was obtained with the dielectric of hydrophobicity. The solid output saturation behavior of ZnO TFTs was demonstrated with a $10^6$ on-off ratio.