• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.428-430
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• 2009

본 논문은 RF 마그네트론 스퍼터링 시스템을 이용하여 p-Si (100) 기판위에 증착된 C축 배향을 가지는 ZnO 박막의 특성을 분석하고 있다. 증착 전력, 공정 압력, 반응가스로 사용된 산소 가스의 비율과 같은 증착 조건들을 변화시켰을 때, ZnO 박막의 결정구조의 변화를 분석한다. 증착된 ZnO 박막의 결정 구조는 주사 전자 현미경(scanning electron microscope, SEM)을 이용하여 조사되었다. 분석 결과 증착 파라미터들은 증착된 ZnO 박막의 결정(grain) 크기와 배향 특성에 강한 영향을 미친다는 사실을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• 한국세라믹학회지
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• 제35권1호
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• 한국전자파학회논문지
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• 제25권12호
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• pp.1219-1227
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• 2014

펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰다. PLD 방법으로 성장된 ZnO 박막위에 RF sputtering 방법을 사용하여 ZnO 박막을 재증착시켰으며, 성장된 ZnO 박막의 물성을 분석하기 위하여 XRD, SEM 및 AFM 분석장비를 사용하였다. 두 가지 증착 방법이 단계적으로 적용되어 성장된 ZnO 박막의 경우, 결정성과 배향성이 우수하게 유지되면서 표면거칠기가 향상되었다. 분석 결과, ${\omega}$-scan의 반치폭과 표면거칠기의 RMS 값은 각각 $0.79^{\circ}$와 1.108 nm였다. 그리고 성장된 양질의 ZnO 박막을 사용하여 SAW-BPF를 제작하여 측정한 결과는 응답 특성의 중심주파수가 260.8 MHz, 대역폭은 2.98 MHz, 그리고 삽입손실은 36.5 dB이었다.

• 한국재료학회지
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• 제16권7호
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• pp.445-448
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• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

• 한국표면공학회지
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• 제39권6호
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• pp.250-254
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• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.208-210
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• 2013

ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and exposed to intense electron beam irradiation to investigate the effects of electron irradiation on the properties of the films. Although all of the films had ZnO (002) textured structure regardless of electron irradiation, the grain sizes of the films decreased with electron irradiation. Surface roughness also depended on electron irradiation. The surface roughness varied between 2.3 and 1.6 nm, depending on the irradiation energy. Based on photoluminescence (PL) characterization, the most intense UV emission was observed from ZnO films irradiated at 900 eV. Since the intensity of UV emission is dependent upon the stoichiometric of ZnO films, we conclude that 900 eV was the optimum electron irradiation energy to achieve the best stoichiometric of ZnO films in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.129-133
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• 1994

$ZnO_{x}$ films were deposited by conventional thermal evaporation method. Zinc acetate was used as precursor. XRD and SEM results shows films as mixed stats of ZnO and zinc acetate. And EDX measurements reseal composition of films as $ZnO_{x}$.