Browse > Article
http://dx.doi.org/10.4313/TEEM.2013.14.4.208

Effects of Electron Irradiation on the Properties of ZnO Thin Films  

Kim, Seung-Hong (School of Materials Science and Engineering, University of Ulsan)
Kim, Sun-Kyung (School of Materials Science and Engineering, University of Ulsan)
Kim, So-Young (School of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Choi, Dae-Han (Innovation Planning Team, Shinki Intermobile Ltd.)
Lee, Byung-Hoon (Innovation Planning Team, Shinki Intermobile Ltd.)
Kim, Min-Gyu (Innovation Planning Team, Shinki Intermobile Ltd.)
Publication Information
Transactions on Electrical and Electronic Materials / v.14, no.4, 2013 , pp. 208-210 More about this Journal
Abstract
ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and exposed to intense electron beam irradiation to investigate the effects of electron irradiation on the properties of the films. Although all of the films had ZnO (002) textured structure regardless of electron irradiation, the grain sizes of the films decreased with electron irradiation. Surface roughness also depended on electron irradiation. The surface roughness varied between 2.3 and 1.6 nm, depending on the irradiation energy. Based on photoluminescence (PL) characterization, the most intense UV emission was observed from ZnO films irradiated at 900 eV. Since the intensity of UV emission is dependent upon the stoichiometric of ZnO films, we conclude that 900 eV was the optimum electron irradiation energy to achieve the best stoichiometric of ZnO films in this study.
Keywords
ZnO; Sputtering; Thin films; Electron irradiation; Photo-Luminescence;
Citations & Related Records
연도 인용수 순위
  • Reference
1 C. T. Lee, Y. K. Su, and S. L. Chen, J. Cryst. Growth 96, 785 (1989) [DOI: http://dx.doi.org/10.1016/0022-0248(89)90637-4].   DOI   ScienceOn
2 S. K. Shukla, A. Tiwari, G. K. Parashar, A. P. Mishra, and G. C. Dubey, Talanta, 80, 565 (2009) [DOI: http://dx.doi.org/10.1016/j.talanta.2009.07.026].   DOI   ScienceOn
3 S. Suzuki, T. Miyata, M. Ishii, and T. Minami, Thin Solid Films 434, 14 (2003) [DOI: http://dx.doi.org/10.1016/S0040-6090(03)00463-2].   DOI   ScienceOn
4 J. Nomoto, M. Konagai, K. Okada, T. Ito, T. Miyata, and T. Minami, Thin Solid Films 518, 2937 (2010) [DOI: http://dx.doi.org/10.1016/j.tsf.2009.10.134].   DOI   ScienceOn
5 A. Yamada, B. Sang, and M. Konagai, Appl. Surf. Sci. 112, 216 (1997) [DOI: http://dx.doi.org/10.1016/S0169-4332(96)01022-7].   DOI   ScienceOn
6 S. Venkatachalam, and Y. Kanno, Curr. Appl. Phys. 9, 1232 (2009) [DOI: http://dx.doi.org/10.1016/j.cap.2009.02.003].   DOI   ScienceOn
7 B. D. Cullity : Elements of X-ray Diffraction, (Addition-Wesley, Reading, MA, 1978), 102-121.
8 D. Kim, and S. Kim, Thin Solid Films 408, 218 (2002) [DOI:http://dx.doi.org/10.1016/S0040-6090(02)00148-7].   DOI   ScienceOn
9 D. Kim, Renewable Energy 36, 525 (2011) [DOI: http://dx.doi.org/10.1016/j.renene.2010.06.031].   DOI   ScienceOn
10 S. H. Bae, S. Y. Le, B. J. Jin, and S. Im, Appl. Surf. Sci. 154-155, 458 (2000) [DOI: http://dx.doi.org/10.1016/S0169-4332(99)00398-0].   DOI   ScienceOn