• 한국재료학회지
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• 제22권12호
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• pp.675-681
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• 2012

We aimed to examine the co-doping effects of 1/6 mol% $Mn_3O_4$ and 1/4 mol% $Cr_2O_3$ (Mn:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Cr-doped ZBS, ZBS(MnCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ (also ${\beta}-Bi_2O_3$ at Sb/Bi ${\leq}$ 1.0) were detected for all of the systems. Mn and Cr are involved in the development of each phase. Pyrochlore was decomposed and promoted densification at lower temperature on heating in Sb/Bi = 1.0 system by Mn rather than Cr doping. A more homogeneous microstructure was obtained in all systems affected by ${\alpha}$-spinel. In ZBS(MnCr), the varistor characteristics were improved dramatically (non-linear coefficient, ${\alpha}$ = 40~78), and seemed to form ${V_o}^{\cdot}$(0.33 eV) as a dominant defect. From impedance and modulus spectroscopy, the grain boundaries can be seen to have divided into two types, i.e. one is tentatively assigned to ZnO/$Bi_2O_3$ (Mn,Cr)/ZnO (0.64~1.1 eV) and the other is assigned to the ZnO/ZnO (1.0~1.3 eV) homojunction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.103-103
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• 2011

The epitaxial Cu-doped ZnO and pure ZnO thin films were grown on Al2O3 (0001) substrates by RF sputtering method. The structures and crystallographic orientations were investigated using X-ray diffraction (XRD) and X-ray absorption spectroscopy. From the XRD pattern, it is observed that peak positions shift towards higher $2{\theta}$ value with Cu doping. The ${\omega}$-scan measurements at the (0002) diffraction peak for these samples reveal that the full-widths at half-maxima (FWHMs) are about $0.017-0.019^{\circ}$, which indicate a good c-axis orientation of the Zn1-xCuxO films. From phi-scan, all of the Zn1-xCuxO films were epitaxially grown. EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. All the results confirmed that copper ion were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO thin films.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• 한국세라믹학회지
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• 제38권4호
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• pp.337-342
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• 2001

PDP(Plasma Display Panel)용 녹색 형광체인 Zn$_2$SiO$_4$:Mn에 채-dopant로 Al을 첨가하여 졸-겔법으로 합성하였다. 졸-겔법으로 제조한 형광체는 기존의 고상 반응에 의해 합성된 경우보다 낮은 온도(1000-110$0^{\circ}C$)에서 Zn$_2$SiO$_4$단일상을 형성하였으며, 300-500nm의 비교적 균일한 입자를 얻을 수 있었다. 또한, co-dopant인 Al을 첨가함으로써 발광휘도를 향상시키고, 전광시간을 줄일 수 있었다. 한편, TEOS의 가수분해시 $H_2O$/TEOS 비율을 조절하여 발광의 최적 조건을 조사하였다.

• 분석과학
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• 제14권3호
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• pp.259-265
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• 2001

ZnO, CdS, rutile-$TiO_2$ 및 혼합 rutile-$TiO_2$/ZnO와 같은 여러 반도체를 이용하여 Congo Red를 광 촉매 분해시켰다. 연구 결과 ZnO, CdS, rutile-$TiO_2$ 중에서는 CdS의 광 촉매 효과가 제일 컸는데 이것은 CdS가 제일 작은 band gap 에너지를 가지고 있기 때문이었다. 또한 혼합 촉매에서는 ZnO의 함량이 rutile-$TiO_2$에 비하여 상대적으로 높을수록 분해 반응을 촉진하였다. 이것은 $Zn^{2+}$ 가수분해 생성물이 구조적으로 안정한 화합물인 rutile-$TiO_2$의 표면을 덮음으로서 자외선 흡수를 차단하기 때문에 라디칼 생성을 저해하기 때문이었다.

• 열처리공학회지
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• 제31권3호
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.243-247
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• 2012

Photocatalysis has been applied to decompose the waste and toxic materials produced in daily life and in the global environment. Pure $TiO_2$ (Zn-$TiO_2$-0) and Zn-doped $TiO_2$ (Zn-$TiO_2$-x, x = 3-10 mol %) samples were synthesized using a novel sol-gel and ammonia-evaporation method. The Zn-doped $TiO_2$ samples showed high photocatalytic activity for the degradation of methylene blue (MB). The physicochemical properties of the samples were investigated using XRD, SEM, ICP, DLS and BET methods. In addition, the most important measurement of photocatalytic ability was investigated by a UV-vis spectrophotometer. The effects of the mol % of zinc ion doping in $TiO_2$ on photocatalytic activity were studied. Among the mol % Zn ions investigated, the Zn-$TiO_2$-9 sample showed the highest photoreactivity. This sample removed 91.4% of the MB after 4 h, while the pure $TiO_2$ only removed 46.4% of the MB.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.