• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.415-418
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• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• 대한화학회지
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• 제43권2호
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• pp.206-212
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• 1999

본 연구의 목적은 기존의 $Zn_2SiO_4:Mn$형광체에 새로운 co-dopant를 첨가하여 발광특성을 향상시키는 것이다. co-dopant로서 선정한 Mg와 Cr이온들은 Zn자리를 치환하는 것으로 알려져 있으며 실제로 co-doping 시 각각 발광휘도와 decay time을 개선시키는 효과를 거두었다. $Zn_2SiO_4:Mn$에 Mg와 Cr이온들이 co-doping될 시에는 lattice 및 $Mn^{2+}$의 에너지 준위를 변화시키는 것으로 추정되어 발광휘도 및 decay time의 변화를 일으키는 것으로 해석된다. 특히 이 원소들은 발광과정에 긍정정인 영향을 끼쳐 Mg는 발광휘도를 중가시키고 Cr은 decay time을 감소시키는 결과를 얻었다. $Zn_2SiO_4:Mn,\;Mg$ 형광체의 발광휘도 개선은 DV-X${\alpha}$ embedded cluster 계산방법으로 설명할 수 있었고 반면에 $Zn_2SiO_4:Mn,\;Cr$ 형광체가 decay time을 줄이는 원인은 Mn이온과 Cr이온사이에 energy transfer가 일어나 발생되는 것으로 추정된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.198-203
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• 2000

This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1205-1211
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• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• 한국결정성장학회지
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• 제12권1호
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• pp.50-55
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• 2002

$LiNbO_3$ 단결정에 $Nd_2O_3$0.2~0.5 wt.%를 칭량하여 결정을 성장 시켰다. 그리고 광손상을 억제하기 위해 ZnO 2~8 mole%를 첨가하여 광손상에 대한 저항성을 높였다. 본 연구에서는 Nd가 doping된 단결정을 성장시켜 주기적인 domain을 만들고자 하였다

• 대한전기학회논문지
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• 제34권5호
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• pp.186-192
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• 1985

Co2O3 additive effects on the electrical properties in ZnO varistor are investigated. As the Co Cations being substituted and ionized normally to a divalent state for Zn in the lattice site increase, the leakage current in the prebreakdown region decreases and the so-called

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.323-326
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• 2010

$(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors doped with Ca were synthesized by solid state reaction method. $(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors showed XRD patterns of Willemite structure. Also, $CaSiO_3$ structure and new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with increasing value of x were observed from XRD and PL. The new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with doping Ca was attributed to formation of $CaSiO_3$.

• Journal of Magnetics
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• 제17권3호
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).