• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.705-709
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• 2003

The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.99-104
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• 1981

Glass-ceramics possessed a number of characteristics which suggested their suggested their use for sealing to metals. The choice of particular glass-ceramics compositions for this application is governed by various factors, including workability of the glasses, thermal expansion characteristics and the matching of these to appropriate metals. Other properties, such as mechanical strength, determined the performance of glass-ceramics to metal seals. The purpose of the present study was to investigate direct sealing behaviour of copper to $Li_2O-ZnO-SiO_2$ system glass-ceramics. The design of the seal was a concentric seal which might contribute to the strong bond formation by providing compressive stress during thermal excursions. Tensile strengths of sealing layers were measured by Instron test machine. The layers were examined by electron probe microanalyzer. Crsystallization rate was increased with the amount of ZnO or $Li_2O$, and ZnO increased the sealing strength, but $Li_2O$ lowered it. Sealing mechanism was due to the formation of metal oxides, which acted as binder between copper and glass-ceramics. The nickle-plated copper seal with 10% $Li_2O$ and 30% ZnO was the most strong seal, and its sealing strength was more than 56kg/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.32-33
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• 2006

In this study, in order to develop multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$. $Na_2CO_3$ and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor and mechanical quality factor of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4wt% and then decreased. At the sintering temperature of $900^{\circ}C$ and 0.4wt% ZnO addition, density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant showed the optimum value of 7.876g/$cm^2$, 1299, 0.612, 1151 and 369pC/N, respectively.

• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.723-730
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• 1993

The mechanism of formation of perovskite phase and the dielectric properties of PZMN[Pb(Zn, Mg)1/3Nb2/3O3] ceramics were examined using two different types of the columbite precursors, (Mg, Zn)Nb2O6 (MZN) and MgNb2O6＋ZnNb2O6 (MN＋ZN). The formatin of perovskite phase in PbO＋MN＋ZN system is characterized by an initial rapid formation of Mg-rich perovskite phase, followed by a sluggish formation of Zn-rich perovskite phase. On the other hand, thepyrochlore/perovskite transformation in the PbO＋MZN system proceeded uniformly with a spatial homogeneity. The degree of diffuseness of the rhombohedral/cubic phase transitionis higher in the PbO＋MN＋ZN system than in the PbO＋MZN specimen, indicating a broadened compositional distributjion of the B-site catons (Nb+5, Zn+2, Mg+2) in the PbO＋MN＋ZN system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.39-45
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• 2003

The varistor properties of ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with Sm$_2$O$_3$were investigated in the addition range of 0.0~2.0 mol% Sm$_2$O$_3$at sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. As Sm$_2$O$_3$ content is increased, the breakdown voltage was increased in the range of 348.9~521.8 V/mm for ceramics sintered at 130$0^{\circ}C$ and 8.5~381.3 V/mm for ceramics sintered at 135$0^{\circ}C$. On the whole, the increase of sintering temperature led to the low nonlinearity regardless of Sm$_2$O$_3$content. ZnO-Pr$_{6}$O$_{11}$-CoO-based ceramics doped with 1.0 mol% at each sintering temperature exhibited the most superior varistor properties, with the nonlinear exponent of 42.1 at 130$0^{\circ}C$, 36.8 at 135$0^{\circ}C$ and the leakage current of 9.2 $\mu$A at 130$0^{\circ}C$, 11.7 $\mu$A at 135$0^{\circ}C$.EX>.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.282-285
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• 2012

It is well known that Zinc Oxide (ZnO) is an attractive material for its various applications. ZnO has been mostly used as a transparent conducting oxide in liquid crystal displays, solar cells due to its advantages of low cost, high productivity, and excellent electrical conductivity. Notably, flexible-dye-sensitized solar cells (DSSCs) based on polyethylene terephthalate (PET) substrates require low temperature sintering processing conditions. Therefore, low temperature processing conditions have been strongly required for transparent conducting film applications. In this paper, we prepared low temperature-sintered ZnO ceramics employing Li as a sintering aid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.543-546
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• 2011

We studied sintering temperature to enhance the piezoelectric properties of $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$+0.01wt%ZnO (hereafter NKN-LST+ZnO) lead free piezoelectric ceramics. The synthesis and sintering method were the conventional solid state reaction method and sintering was executed at $1,080\sim1,120^{\circ}C$. We found that NKN-LST+ZnO ceramics at optimal sintering temperature showed the improved piezoelectric properties at the optimal sintering temperature. The NKN-LST+ZnO ceramics show good performance with piezoelectric constant $d_{33}$= 153 pC/N sintered at $1,090^{\circ}C$. The results reveal that NKN-LST+ZnO ceramics are promising candidate materials for lead-free piezoelectric application.