• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.242-247
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• 1998

In this study, we have synthesized $ZnGa_2O_4$:Mn,X powder doped with Mn, MnO, $MnF_2$ and $MnCl_2$, low voltage green emitting phosphor, in vacuum atmosphere. From PL spectra, the intensity of the emission peak, the brightness with coactivator show that $ZnGa_2O_4$:Mn,Cl > $ZnGa_2O_4$:Mn,F > $ZnGa_2O_4$:Mn,O > $ZnGa_2O_4$:Mn. These improvement of the brightness are caused by the increase of the concentration of $Mn^{2+}$ ion. In case of $ZnGa_2O_4$:Mn,Cl and ZnGa$_2$O$_4$:Mn,F, the brightness is enhanced much more, which is owed to the decrease of defect of host material. For $ZnGa_2O_4$:Mn,Cl phosphor fabricated with optimized condition, the decay time becomes short from 30 ms of the $ZnGa_2O_4$:Mn and $ZnGa_2O_4$:Mn,O to 6 ms and the brightness of CL at 1 kV, 1 mA is 60 cd/$m^2$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.10-16
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• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.703-708
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• 2009

In this paper, synthesis here Mn add to Ar any a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1:1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum, the surface a picture and a component ratio measurement, also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.360-365
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• 1992

Ga-doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering discs consisting of ZnO powder and various amounts of G$a_2O_3$, to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure and gallium content, transparent Ga-doped ZnO films with resistivity less than 1$0^{-3}$ohm-cm are obtained. Electron concentration of undoped and Ga-doped ZnO films are order of $10^{18}$, $10^{21}$/c$m^2$respectively. After heat treatment in air and $N_2atmosphere, $ the resistivity of Ga-doped ZnO films increases by about two orders of magnitude. The optical transmission is above 80% in the visible range and the optical band widens as the Ga content increases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.109-114
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• 2016

Monodispersed $ZnGa_2O_4$ microspheres were synthesized by a facile two-step process consisting of a solvothermal method and calcination process. The prepared monodispersed $ZnGa_2O_4$ microspheres were aggregated into 3D microstructures by self-assembly with a large number of small $ZnGa_2O_4$ particles generated in nucleation. This nucleation and self-assembly making hierarchical microstructures were depended on the concentration of PEG (polyethylene glycol) due to CAC (critical aggregation concentration) theory. And also we controlled the amount of zinc acetate to make pure $ZnGa_2O_4$ phase. Additionally, to fix the optimized calcination condition, sample was characterized by TG-DTA to prove the thermal property in the calcination process and by FT-IR to identify the changes of functional group bonding between each element of the $ZnGa_2O_4$ precursor and oxide calcined at $900^{\circ}C$ for 1 h.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.11-15
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• 2011

In this study, $ZnGa_2O_4$ phosphors in its application to field emission displays and electroluminescence were synthesized through the precipitation method and $Mn^{2+}$ ions. A green luminescence activator, $Cr^{3+}$ ions, and a red luminescence activator were separately doped into $ZnGa_2O_4$, which was then screen printed to an indium tin oxide substrate. The thick films of the $ZnGa_2O_4$ were deposited with the various thicknesses using nano-sized powder. The best luminescence characteristics were shown at a thickness of 60 ${\mu}m$. Additionally, green-emission $ZnGa_2O_4:Mn^{2+}$ and red-emission $ZnGa_2O_4:Cr^{3+}$ phosphor thick films, which have superior characteristics, were manufactured through the screen-printing method. These results indicate that $ZnGa_2O_4$ phosphors prepared through the precipitation method have wide application as phosphor of the full color emission.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.134-138
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• 1997

$Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.