• 한국세라믹학회지
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• 제29권2호
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• pp.101-106
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• 1992

Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

• 한국세라믹학회지
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• 제19권4호
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.218-219
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• 2005

In this paper, in order to develop Pb-free piezoelectric ceramics, $[Li_{0.04}(Na_{0.44}K_{0.52})-(Nb_{0.86}Ta_{0.10}Sb_{0.04})]O_3$ ceramic was fabricated with the variation of ZnO addition. Piezoelectric properties of the ceramic were varied with the amount of ZnO addition and showed the maximum kp value at 0.2 wt% ZnO addition. Qm of ZnO added ceramics showed lower values than the non-added ceramics, however, the kp was increased by the addition of ZnO up to 0.2 wt%. At the sintering temperature of 1110$^{\circ}C$ and the calcination temperature of 850$^{\circ}C$, the optimal values of density=473g/$cm^3$, kp=0.473, $\varepsilon_r$=1403 were obtained.

• 한국자기학회지
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• 제12권5호
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• pp.195-200
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• 2002

각종 산화물을 첨가하여 Co$_2$Z type Ba-ferrite의 저온소결에 관하여 연구하였다. Co$_2$Z type Ba-ferrite 상은 2회 하소과정을 통하여 얻을 수 있었으며, 생성된 상의 XRD peaks는 일부 minor peaks 제외하고는 standard peaks와 거의 일치하였다 제조된 분말은 저온소결을 위하여 ZnO-B$_2$O$_3$ glass리 단독 첨가 및 CuO 또는 Bi$_2$O$_3$와 복합 첨가하였으며, 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가하였다. 소결은 900~100$0^{\circ}C$에서 수행하였다. ZnO-B$_2$O$_3$ glass의 단독 첨가 시, 첨가량이 7.5 wt%일 때 가장 높은 수축거동을 나타내었다. ZnO-Bi$_2$O$_3$ glass와 CuO 또는 Bi$_2$O$_3$를 복합 첨가하였을 때, glass를 단독 첨가하였을 경우보다 수축률이 급격히 증가되었다. 또한 ZnO-Bi$_2$O$_3$ glass를 단독 첨가한 시편의 수축률과 초기 투자율은 ZnO-B$_2$O$_3$ glass를 단독 첨가한 시편보다 높은 값을 나타내었다.

• 한국결정성장학회지
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• 제16권1호
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• 한국재료학회지
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• 제24권8호
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• pp.413-416
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• 2014

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for $H_2S$ gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of $H_2S$ gas at room temperature by comparing the resistance in air with that in target gases.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.165-169
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• 2015

In this paper, in order to develop the composition ceramics with the excellent dielectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics were fabricated by the conventional solid-state method. The effects of ZnO addition on their microstructure and piezoelectric properties were systematically investigated. The rhombohedral-tetragonal phase coexistence has been found in the ceramics without ZnO content and then with further increasing ZnO content, specimens exhibited tetragonal phase. The optimized ZnO content formed liquid phase and aided the grain growth of specimens. When 0.4 wt% ZnO was added, the optimal physical properties ($d_{33}=422pC/N$, $d_{31}=161pC/N$, ${\varepsilon}_r=1,905$, $k_p=0.55$, $Q_m=160$) were obtained.

• 한국세라믹학회지
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• 제40권6호
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• pp.560-565
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• 2003

방전 플라즈마 소결법(SPS: Spark Plasma Sintering)을 이용하여 800~100$0^{\circ}C$의 낮은 소결 온도에서 완전 치밀화를 이루는 M-doped ZnO를 (M=Al, Ni) 제조하여 그 소결 특성과 미세구조를 분석하였다. 전자현미경 분석 결과, NiO의 첨가는 ZnO 결정격자와의 고용체 형성을 촉진시키고 결정립 성장을 유발하였고, A1$_2$O$_3$는 순수한 ZnO 소결 시 나타나는 입계에서의 증발현상을 제어하고, 이차상 형성을 통하여 결정립 성장을 억제함을 확인할 수 있었다 NiO와 $Al_2$O$_3$를 동시에 첨가한 시편이 가장 우수한 미세구조가 형성됨을 확인하였고, SEM-EBSP (Electron Back-scattered Diffraction Pattern) 분석 결과 또한 우수한 결정립계 분포를 가지고 있음을 확인하였다. 이러한, 소결체의 우수한 미세구조적 특징은 carrier 농도 증가에 따른 전기 전도도와 증가 및 phonon scattering 효과에 의한 열전도도의 감소 효과를 유발하여 ZnO의 열전 특성을 향상시키리라 사료된다.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.353-356
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• 2014

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electron-collecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

• Korean Chemical Engineering Research
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• 제49권6호
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• pp.720-725
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• 2011

금속질산염과 염화금산을 전구체로 사용하여 다양한 금속산화물($$Al_{2}O_{3}$, ZnO, $Fe_{2}O_{3}$, $Cr_{2}O_{3}$, $MnO_{2}$, CuO, NiO, $Co_{3}O_{4}$)에 담지된 금촉매를 공침법을 이용하여 제조한 후, 일산화탄소 산화반응에서 수분첨가의 영향을 검토하였다. 이들 중 $Co_{3}O_{4}$와 ZnO에 담지된 금촉매가 일산화탄소에 대하여 높은 활성을 보여주었다. 반응가스 중에 수분이 첨가될 때 Au/$Co_{3}O_{4}$ 촉매는 활성이 약간 감소하였으나, Au/ZnO 촉매에서는 활성이 크게 증가하여 수분에 의한 일산화탄소 산화 활성은 담체의 종류에 크게 의존함을 알 수 있었다. 반응가스 중에 포함된 수분에 관계없이 반응 전과 후의 Au(5 wt%)/ZnO 촉매의 금입자 크기는 거의 변하지 않아 활성이 감소되는 이유는 금입자들의 소결에 의한 영향보다는 카보네이트와 같은 화학종에 의해 불활성화가 일어남을 알 수 있었으며, 이 화학종은 수분의 첨가에 의해 이산화탄소로 분해되어 활성이 증가한 것으로 생각된다.