• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.94-97
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• 2003

This study uses ZnO thin film as a piezoelectric material and Pt as bottom electrode for FBAR (film bulk acoustic resonator) device. ZnO thin film and Pt were deposited by RF-magnetron sputtering method. ZnO thin film and Pt were oriented to c-axis. Top electrode Al was deposited by thermal evaporation. The membrane was formed of bulk micromachining. The FBAR was evaluated by XRD, SEM and electrical characterization. The resonant frequency was measured by HP 8753C Network Analyzer. A fabricated FBAR device exhibited a resonant frequency of 700 MHz ~ 1.5 GHz. When bottom electrode and top electrode thickness were fixed, the resonant frequency was increased as decreasing ZnO thin film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.139-141
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• 2008

The piezoelectric properties of tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals are characterized along the <111> direction, which composed the engineering domain configuration in the tetragonal phase. The <111>-oriented crystal possessed smaller $d_{33}$ values compared to the crystal along the <001> spontaneous polarization direction. Based on phenomenological theory, it is shown that the engineering domain configuration does not enhance the piezoelectric constant in tetragonal 0.88Pb$(Zn_{1/3}Nb_{2/3)O_3-0.12PbTiO_3$ single crystals. In addition, the electrostrictive coefficients of $Q_{12}=-0.03706m^4/C^2,\;Q_{11}=0.10765m^4/C^2,\;and\;Q_{44}=0.02020m^4/C^2$ of tetragonal 0.88PZN-0.12PT single crystals were calculated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.216-220
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• 2001

Piezoelectric ZnO thin films by Facing Targets Sputtering(FTS) method were deposited on slide glass. The Facing Targets Sputtering system can deposit thin film at plasma-free condition and change the deposition condition in wide range. The characteristics of ZnO thin films changed with power, working pressure and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step(Tencor) and SEM(Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable for the preparation of high quality ZnO thin films with good c-axis orientation.

• Smart Structures and Systems
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• v.12 no.1
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• pp.55-71
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• 2013

Structural health monitoring (SHM) is vital for detecting the onset of damage and for preventing catastrophic failure of civil infrastructure systems. In particular, piezoelectric transducers have the ability to excite and actively interrogate structures (e.g., using surface waves) while measuring their response for sensing and damage detection. In fact, piezoelectric transducers such as lead zirconate titanate (PZT) and poly(vinylidene fluoride) (PVDF) have been used for various laboratory/field tests and possess significant advantages as compared to visual inspection and vibration-based methods, to name a few. However, PZTs are inherently brittle, and PVDF films do not possess high piezoelectricity, thereby limiting each of these devices to certain specific applications. The objective of this study is to design, characterize, and validate piezoelectric nanocomposites consisting of zinc oxide (ZnO) nanoparticles assembled in a PVDF copolymer matrix for sensing and SHM applications. These films provide greater mechanical flexibility as compared to PZTs, yet possess enhanced piezoelectricity as compared to pristine PVDF copolymers. This study started with spin coating dispersed ZnO- and PVDF-TrFE-based solutions to fabricate the piezoelectric nanocomposites. The concentration of ZnO nanoparticles was varied from 0 to 20 wt.% (in 5 % increments) to determine their influence on bulk film piezoelectricity. Second, their electric polarization responses were obtained for quantifying thin film remnant polarization, which is directly correlated to piezoelectricity. Based on these results, the films were poled (at 50 $MV-m^{-1}$) to permanently align their electrical domains and to enhance their bulk film piezoelectricity. Then, a series of hammer impact tests were conducted, and the voltage generated by poled ZnO-based thin films was compared to commercially poled PVDF copolymer thin films. The hammer impact tests showed comparable results between the prototype and commercial samples, and increasing ZnO content provided enhanced piezoelectric performance. Lastly, the films were further validated for sensing using different energy levels of hammer impact, different distances between the impact locations and the film electrodes, and cantilever free vibration testing for dynamic strain sensing.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.68-69
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• 2005

Low temperature ($\leq900^{\circ}C$) sintering piezoelectric ceramics $0.01Pb(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3+0.1wt%Y_2O_3+xwt%ZnO$ $(0{\leq}x{\leq}2.5)$ have been developed and investigated. The electromechanical coupling coefficient ($k_p$), piezoelectric constant ($d_{33}$), and mechanical quality factor ($Q_m$) have been measured to characterize the piezoelectric materials system. When 2.0 wt% ZnO is added, the properties of the system, $d_{33}$ = 559 pC/N, $k_p$ = 55.0 % and $Q_m$ = 73.4 are obtained which are very suitable for piezoelectric actuators. A bending mode multilayer actuator has been also developed using the materials which size is $27(L)\times9(W)\times1.07(t)mm^3$. The actuators are fabricated by multilayer ceramic (MLC) process and consist of24 layers and each layer thickness is $35{\mu}m$. At this time, the displacement of actuator was $100{\mu}m$ at 28V.