• 한국세라믹학회지
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• 제29권3호
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• pp.177-182
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• 1992

The effect of heat-treatment temperature on the microwave absorbing properties was investigated in Ni0.8Zn0.2Fe2O4 specimens. The composite specimens were prepared by modling and curing the mixture of prereacted ferrite powder and silicone rubber. The measurement of complex permeability and permittivity was made by the reflection/transmission method. The most sensitive material constants with heat-treatment temperature is the imaginary (loss) component of permeability. The higher the heat-treatment temperature, the greater the magnetic loss. The composite specimens with high magnetic loss exhibited superior microwave absorbing properties. The quantitative estimation of microwave absorbing properties were made by plotting the observed material constants on the calculated solution map of impedance-matching.

• Korean Chemical Engineering Research
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• 제57권4호
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• pp.559-564
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• 2019

본 연구는 계층적 구조를 갖는 중공형 $ZnCo_2O_4$ 나노 섬유를 전기방사공정 및 후 열처리 공정을 통해 합성했다. 용액에 polystyrene (PS) 나노비드를 첨가하여 방사된 섬유는 열처리 과정을 통해 PS가 제거됨으로써 구조체 내 기공이 균일하게 생성되었으며 이는 구조체 내로 열 전달 및 가스의 침투를 원활히 함으로써 계층적 구조를 갖는 중공형 $ZnCo_2O_4$ 나노 섬유가 합성될 수 있었다. 계층적 구조를 갖는 중공형 $ZnCo_2O_4$ 나노 섬유를 리튬 이차전지의 음극활물질로 적용한 결과, $1.0A\;g^{-1}$의 높은 전류밀도에도 불구하고 300 사이클 동안 $815mA\;h\;g^{-1}$ ($646mA\;h\;cm^{-3}$)의 높은 가역 용량을 유지했다. 반면 $ZnCo_2O_4$ 나노 분말은 300 사이클 후 $487mA\;h\;g^{-1}$ ($450mA\;h\;cm^{-3}$)의 방전 용량을 나타냈다. 계층적 구조를 갖는 중공형 $ZnCo_2O_4$ 나노 섬유의 우수한 리튬 저장 특성은 중공 구조 및 섬유 표면을 구성하는 $ZnCo_2O_4$ 나노결정에 기인한 결과이다. 본 연구에서 제안한 계층적 구조를 갖는 중공형 나노 섬유 구조체는 다양한 금속 산화물로 확장 적용이 가능하며 에너지 저장 분야를 포함한 여러 분야에 응용 가능하다.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• 열처리공학회지
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• 제27권1호
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• pp.23-26
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• 2014

Ga doped ZnO (GZO) single layer and GZO/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering and then the influence of film thickness on the structural, electrical, and optical properties of the films was considered. Thicknesses of the GZO/ZnO films was varied as GZO 100 nm, GZO 85 nm/ZnO 15 nm and GZO 70 nm/ZnO 30 nm, respectively. The observed result means that optical transmittance and electrical resistivity of the films were influenced with film thickness and GZO 85 nm/ZnO 15 nm bilayered films show the higher figure of merit than that of the films prepared other films in this study.

• 한국응용과학기술학회지
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• 제28권2호
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• pp.251-257
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• 2011

The processes for the preparation of ZnO powder by using EAF(electric arc furnace)dust was studied by wetting method which are divided to two steps, carried out of the elution processes by various concentrations of sulfuric acid is reacted with EAF dust as the former, and the latter were performed by a number of specified processes, which are leaching process depends on various pH, cementation, ozone and heat treatment processes etc. Experimental results showed that the appropriate pH range is pH7.5~8.0 and the resulting zinc content is range of 37~38%, the residual quantities of the heavy metals are less than 3ppm individually by cementation process except Mn, even though the Mn metal could not be removed by cementation process but was removed up to 0.2ppm by the ozone process from 70ppm initially. Finally, 80.2% of ZnO was obtained by the heat treatment at $500^{\circ}C$.

• 한국결정성장학회지
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• 제1권2호
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• pp.94-103
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• 1991

ZnO함량이 45~60mol%인 ZnO-$P_2O_5$계 유리를 $1200^{\circ}C$에서 용융한 후 열처리하여 결정화시켰다. 기초유리와 결정화시킨 시료의 기계적 성질, 전기적 성질 등을 X선 회절, FTIR, 밀도, 열팽창, 전기전도도, 미세경도 등을 측정하여 검토하였다. X선 회절분석 결과 ZnO의 함량이 45~55mol%인 결정화 유리에서는 주결정상이 메타인산아연[$Zn(PO_3)_2$]이었으며ZnO가 60mol%인 시료는 피로인산아연($Zn_2P_2O_7$)으로 나타났다. 열팽창계수와 직류전기전도도는 ZnO가 50~60mol%인 시료에서 결정상 방향에 따라 각기 다른 값을 나타났으며 이는 배향성 결정상이 존재함을 시사한다.

• 한국세라믹학회지
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• 제39권7호
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• pp.649-656
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• 2002

Zn(NO$_3$)$_2$ 수용액과 urea[CO(NH$_2$)$_2$]를 이용한 침전법과 Self-Assembled Monolayers(SAMs)를 이용한 microcontact printing 방법으로 미세 패턴화된 ZnO 박막을 Al/si0$_2$/si 기판 위에 제조하였다. Zn(NO$_3$)$_2$와 urea를 혼합하여 제조한 Zn(OH)$_2$ 박막은 침전온도와 urea 량이 증가할수록 Zn(OH)$_2$의 침전량이 증가하였고 Zn(NO$_3$)$_2$와 urea의 반응 시간이 증가함에 따라, Zn(OH)$_2$ 박막의 두께와 입자 크기가 증가하였다. Zn(NO$_3$)$_2$와 urea의 혼합비를 1 : 8, 용액의 침전 온도를 오일 bath내에서 8$0^{\circ}C$, 반응시간을 1시간으로 하여 Al/SiO$_2$/Si 기판 위에 침전된 Zn(OH)$_2$ 박막을 $600^{\circ}C$에서 1시간 동안 열처리하여, 미세 패턴을 형성하기 위한 균질한 크기의 ZnO 박막을 제조할 수 있었다. Microcontact printing방법으로 소수성과 친수성 SAMs인 Octadecylphosphonic Acid(OPA)와 2-Carboxyethylphosphonic Acid(CPA)를 각각 Al/SiO$_2$/Si 기판 위에 선택적으로 흡착한 후에 친수성 SAM인 CPA위에 Zn(OH)$_2$를 침전시켜 미세 패턴화된 ZnO 박막을 제조할 수 있었다

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.249-252
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• 1997

Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate 2-methoxyethanol 2-aminoethanol solution as starting materials, and effects of substrates on the film's orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1h. c-axis oriented films on glass substrates were prepared by heat treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.