• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.815-820
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• 2005

ZnO varistor ceramics were fabricated with variation of addition of glass-frit amount and the sintering temperature was $1100^{\circ}C$. The average grain sizes were showed increased from $8.6{\mu}m\;to\;10{\mu}m$, and varistor voltages were decreased from 506V to 460V by added amount of glass-frit. Nonlinear coefficient $\alpha$, of all were with increasing the amount of glass-frit more than 70, in case of added on $0.03wt\%$ glass-frit was 83. And leakage current were less than $1{\mu}A$ with applied at $82\%$ of varistor voltage. The clamping voltage ratio of the specimens added $0.03wt\%$ glass-frit was 1.41 at applied 25A $[8/20\;{\mu}s]$. In the specimen added $0.03wt\%$ glass-frit, endurance of surge current and deviation of varistor voltage were $6200A/cm^2,\;\Delta-1.67\%$, respectively and clamping voltage ratio was 2.33. In the Specimen added $0.03wt\%$ glass-frit were superior to any other compositions on High Temperature Load Test(HTLT) for 1000 hr at $85^{\circ}C$, and deviation of the varistor voltage were $\Delta-1.29\%$.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.1-62.1
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성 및 조성 조절을 통한 밴드갭 조절이 용이해 고효율 박막 태양전지로 각광 받고 있다. 또한 CIGS 태양전지는 기존의 유리기판 대신 유연한 기판을 사용해 flexible 태양전지 제조가 가능하다. 이러한 유연기판은 보통 stainless steel과 같은 금속 기판이 많이 사용되는데 기존의 soda-lime glass 기판과는 달리 금속기판에는 Na이 첨가되어 있지 않아 별도의 Na첨가를 필요로 한다. Na은 CIGS 흡수층의 조성조절을 용이하게 하여 태양전지의 변환 효율을 향상시키는 역할을 한다. 본 연구에서 기판은 Na이 첨가되어있지 않은 corning glass를 사용 하였으며 NaF를 이용해 Mo가 증착된 기판에 NaF의 두께를 달리하며 증착해 CIGS 흡수층의 grain 사이즈를 비교 하였으며 그 후 태양전지 소자를 제조해 광전특성을 분석하였다. 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다. buffer층으로는 약 50nm의 CdS층을 CBD방법을 이용하여 제조 하였으며 TCO 층으로 약 50nm의 i-ZnO와 약 450nm의 Al-ZnO를 RF Sputtering방법으로 증착 하였다. 마지막으로 앞면 전극으로 약 $1{\mu}m$의 Al을 Thermal Evaporation방법으로 증착하였다. 태양전지 소자의 면적은 $0.49cm^2$로 효율을 비교 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.447-447
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on Corning glass and silicon wafer substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2 wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100 Wand 350 W in steps of 50 W on structural, electrical and optical properties of AZO films. Also, we studied the effects of the working pressure (3, 4 and 5 mtorr) on that condition. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant to $150\pm10$ nm on Coming glass and silicon wafer. A grain size was calculated from X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.375-378
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• 2004

ZnO varistor ceramics were fabricated with variation of addition of glass-frit amount and the sintering temperature was $1150^{\circ}C$. The average grain sizes were showed decreased from $8.6\;{\mu}m$ to $10\;{\mu}m$, and varistor voltages were decreased from 506 V to 460 V by added amount of glass-frit. Nonlinear coefficient ${\alpha}$, of all were with increasing the amount of glass-frit more than 60, in case of added on 0.03wt% glass-frit was 83. And leakage current were less than $1{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.03wt% glass-frit was 1.41 at applied 25A $[8/20{\mu}s]$. In the specimen added 0.03wt% glass-frit, endurence of surge current and deviation of varistor voltage were $6200A/cm^2$, $\Delta-1.67%$, respectively.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.980-983
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• 2003

The preparation of ZnS:Mn,Cl phosphor has been carried out by combustion method. Manganese nitrate was decomposed with an organic fuel at $500^{\circ}C$ to give fine sized crystallites in presence of alkali metal halides at a lower temperature than the conventional synthesis. The phosphors thus obtained were then heated at 900 to $1200^{\circ}C$ in an inert atmosphere, for 3hours to get better luminescent properties. The phosphors were prepared at different temperatures and at different doping concentrations of manganese to determine the optimal conditions for synthesizing the phosphors with superior optical properties. Scanning electron microscopy (SEM) investigations have been carried out to observe the particle morphology and the grain size. Powder X-ray diffraction(XRD) was also performed to characterize the phosphors.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.13-18
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• 1997

The effects of the various raw material composition and sintered temperature on the physical properties of Ni-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from microscope was from 6 ${\mu}{\textrm}{m}$ to 16 ${\mu}{\textrm}{m}$. As the sintering temperature was increased from 1030 $^{\circ}C$ to 1070 $^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen. Their values were about 0.20 Oe and 220 $^{\circ}C$. The frequency of specimen will used in the range from 400 kHz to 20 MHz. The basic composition of $Ni_{0.14}Zn_{0.64}Cu_{0.22}Fe_2O_4$ (specimen B) sintered at 1050 $^{\circ}C$ shows the best results at magnetic induction($B_r & B_m$).

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.