• Title/Summary/Keyword: ZnO/ZnS

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SiO2/ZnS:Cu/ZnS Triplex Layer Coatings for Phosphorescence Enhancement

  • Zhang, Wen-Tao;Lee, Hong-Ro
    • Journal of the Korean institute of surface engineering
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    • v.41 no.4
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    • pp.169-173
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    • 2008
  • The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

Zn/Co ZIF derived synthesis of Co-doped ZnO nanoparticles and application as high-performance trimethylamine sensors (Co가 도핑된 ZnO 나노입자의 Zn/Co ZIF 유도 합성 및 고성능 트리메틸아민 센서로의 응용)

  • Yoon, Ji-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.5
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    • pp.222-227
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    • 2018
  • $Zn_{1-x}Co_x$ Zeolitic Imidazolate Framework (ZIF) (x = 0~0.05) were prepared by the co-precipitation of $Zn^{2+}$ and $Co^{2+}$ using 2-methylimidazole, which were converted into pure and Co-doped ZnO nanoparticles by heat treatment at $600^{\circ}C$ for 2 h. Homogeneous Zn/Co ZIFs were achieved at x < 0.05 owing to the strong coordination of the imidazole linker to $Zn^{2+}$ and $Co^{2+}$, facilitating atomic-scale doping of Co into ZnO via annealing. By contrast, heterogeneous Zn/Co ZIFs were formed at $x{\geq}0.05$, resulting in the formation of $Co_3O_4$ second phase. To investigate the potential as high-performance gas sensors, the gas sensing characteristics of pure and Co-doped ZnO nanoparticles were evaluated. The sensor using 3 at% Co-doped ZnO exhibited an unprecedentedly high response and selectivity to trimethylamine, whereas pure ZnO nanoparticles did not. The facile, bimetallic ZIF derived synthesis of doped-metal oxide nanoparticles can be used to design high-performance gas sensors.

Local structure of transparent flexible amorphous M-In-ZnO semiconductor

  • Son, L.S.;Kim, K.R.;Yang, D.S.;Lee, J.C.;Sung, N.;Lee, J.;Kang, H.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.164-164
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    • 2010
  • The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

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Investigation on formation mechanism of ZnO thin films deposited by pulsed laser deposition depending on plume-substrate angles (펄스 레이저 증착법에서 증착 각도 변화에 따른 ZnO 박막 형성 메카니즘)

  • Kim, Jae-Won;Kang, Hong-Seong;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.200-202
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    • 2004
  • ZnO thin films were grown at different plume-substrate angles by pulsed laser deposition(PLD). From the X-ray diffraction(XRD) result, all ZnO thin films were found to be well c-axis oriented and c-axis lattice constant approached the value of bulk ZnO as plume-substrate(P-S) angle decreased. The grain size of ZnO thin films measured by atomic force microscopy increased and the UV intensity of ZnO thin films investigated by photoluminescence increased as P-S angle decreased. It is found that the improvement of structural and optical properties mainly comes from the reduction of the flux of ablated species arriving on a substrate per a laser shot by tilting a substrate parallel to the plume propagation direction.

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Response Characteristics of Thick Film Sensors Using Nano ZnO:Ni for Hydrocarbon Gas (나노 ZnO:Ni를 이용한 후막 가스센서의 탄화수소계 가스에 대한 감응특성)

  • Yoon, So-Jin;Yu, Il
    • Korean Journal of Materials Research
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    • v.23 no.4
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    • pp.211-214
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    • 2013
  • The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

Comparative Studies on Mechanism of Photocatalytic Degradation of Rhodamine B with Sulfide Catalysts under Visible Light Irradiation (가시광선하에서 황화물계 광촉매를 이용한 로다민 B의 광분해 반응기구에 대한 비교 연구)

  • Lee, Sung Hyun;Jeong, Young Jae;Lee, Jong Min;Kim, Dae Sung;Bae, Eun Ji;Hong, Seong Soo;Lee, Gun Dae
    • Clean Technology
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    • v.25 no.1
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    • pp.46-55
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    • 2019
  • CdS and CdZnS/ZnO materials were prepared using precipitation method and used as photocatalysts for the photocatalytic degradation of rhodamine B (RhB) under visible light irradiation. The prepared photocatalysts were also characterized by XRD and UV-vis DRS. The results indicated that the photocatalysts with intended crystalline structures were successfully obtained and both the CdS and CdZnS/ZnO can absorb visible light as well as UV. The photocatalytic activities were examined with the addition of scavenger for various active chemical species and the difference of reaction mechanisms over the catalysts were discussed. The $CH_3OH$, KI and p-benzoquinone were used as scavengers for ${\cdot}OH$ radical, photogenerated positive hole and ${\cdot}O_2{^-}$ radical, respectively. The CdS and CdZnS/ZnO showed different photocatalytic degradation mechanisms of RhB. It can be postulated that ${\cdot}O_2{^-}$ radical is the main active species for the reaction over CdS photocatalyst, while the photogenerated positive hole for CdZnS/ZnO photocatalyst. As a result, the predominant reaction pathways over CdS and CdZnS/ZnO photocatalysts were found to be the dealkylation of chromophore skeleton and the cleavage of the conjugated chromophore structure, respectively. The above results may be mainly ascribed to the difference of band edge potential of conduction and valence bands in CdS, CdZnS and ZnO semiconductors and the redox potentials for formation of active chemical species.

Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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Physicochemical properties of a calcium aluminate cement containing nanoparticles of zinc oxide

  • Amanda Freitas da Rosa;Thuany Schmitz Amaral;Maria Eduarda Paz Dotto;Taynara Santos Goulart;Hebert Luis Rossetto;Eduardo Antunes Bortoluzzi;Cleonice da Silveira Teixeira;Lucas da Fonseca Roberti Garcia
    • Restorative Dentistry and Endodontics
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    • v.48 no.1
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    • pp.3.1-3.14
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    • 2023
  • Objectives: This study evaluated the effect of different nanoparticulated zinc oxide (nano-ZnO) and conventional-ZnO ratios on the physicochemical properties of calcium aluminate cement (CAC). Materials and Methods: The conventional-ZnO and nano-ZnO were added to the cement powder in the following proportions: G1 (20% conventional-ZnO), G2 (15% conventional-ZnO + 5% nano-ZnO), G3 (12% conventional-ZnO + 3% nano-ZnO) and G4 (10% conventional-ZnO + 5% nano-ZnO). The radiopacity (Rad), setting time (Set), dimensional change (Dc), solubility (Sol), compressive strength (Cst), and pH were evaluated. The nano-ZnO and CAC containing conventional-ZnO were also assessed using scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Radiopacity data were analyzed by the 1-way analysis of variance (ANOVA) and Bonferroni tests (p < 0.05). The data of the other properties were analyzed by the ANOVA, Tukey, and Fisher tests (p < 0.05). Results: The nano-ZnO and CAC containing conventional-ZnO powders presented particles with few impurities and nanometric and micrometric sizes, respectively. G1 had the highest Rad mean value (p < 0.05). When compared to G1, groups containing nano-ZnO had a significant reduction in the Set (p < 0.05) and lower values of Dc at 24 hours (p < 0.05). The Cst was higher for G4, with a significant difference for the other groups (p < 0.05). The Sol did not present significant differences among groups (p > 0.05). Conclusions: The addition of nano-ZnO to CAC improved its dimensional change, setting time, and compressive strength, which may be promising for the clinical performance of this cement.

Properties of Powder and Phosphor as function of ZnO : Zn Oxygen Partial Pressure Prepared by Glycine Nitrate Process (GNP 방식으로 제조한 ZnO : Zn의 산소분압에 따른 분말특성 및 형광특성)

  • Choi, Woo-Sung;Park, Sung
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1520-1522
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    • 1999
  • 저 전압용 형광체는 최근에 활발히 연구가 진행되고 있으며 가장 대표적인 형광체가 ZnO : Zn 녹색 형광체이다. ZnO : Zn 형광체는 자체발광형 형광체로써 ZnO을 환원분위기 하에서 열처리를 함으로써 얻을 수 있다. 본 연구에서는 자발착화 연소반응법(Glycine Nitrate Process)을 이용하여 ZnO : Zn 분말을 합성하고 형광특성 및 분말특성을 알아보았다. 출발물질로는 Zn Nitrate와 Glycine을 이용하였고 자발연소 반응이 발생하는데 적절한 글리신의 양을 확인하기 위해서 글리신과 양이온의 비를 변화시키며 ZnO를 합성하였다. 그리고 Zn Excess가 생겨난 양과 그에 따른 형광특성을 관찰하기 위해 $N_2$ 분위기에서 각기 $500^{\circ}C,\;750^{\circ}C,\;950^{\circ}C$의 온도에서 열처리를 행하였다. 제조된 ZnO 분말의 입자형태와 결정상태는 SEM과 XRD를 이용하여 분석하였고 TG-DTA를 측정하여 열처리 온도에 따른 질량감소(ZR excess)를 관찰하였다. 또 Particle size analyzer로 분말의 크기를 알아보았고 형광체로써의 발광특성을 살펴보기 위해 PL을 이용하여 발광피크를 관찰하였다.

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Facile in situ Formation of CuO/ZnO p-n Heterojunction for Improved H2S-sensing Applications

  • Shanmugasundaram, Arunkumar;Kim, Dong-Su;Hou, Tian Feng;Lee, Dong Weon
    • Journal of Sensor Science and Technology
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    • v.29 no.3
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    • pp.156-161
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    • 2020
  • In this study, hierarchical mesoporous CuO spheres, ZnO flowers, and heterojunction CuO/ZnO nanostructures were fabricated via a facile hydrothermal method. The as-prepared materials were characterized in detail using various analytical methods such as powder X-ray diffraction, micro Raman spectroscopy, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and transmission electron microscopy. The obtained results are consistent with each other. The H2S-sensing characteristics of the sensors fabricated based on the CuO spheres, ZnO flowers, and CuO/ZnO heterojunction were investigated at different temperatures and gas concentrations. The sensor based on ZnO flowers showed a maximum response of ~141 at 225 ℃. The sensor based on CuO spheres exhibited a maximum response of 218 at 175 ℃, whereas the sensor based on the CuO/ZnO nano-heterostructure composite showed a maximum response of 344 at 150 ℃. The detection limit (DL) of the sensor based on the CuO/ZnO heterojunction was ~120 ppb at 150 ℃. The CuO/ZnO sensor showed the maximum response to H2S compared with other interfering gases such as ethanol, methanol, and CO, indicating its high selectivity.