• Korean Journal of Fisheries and Aquatic Sciences
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• v.44 no.6
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• pp.759-771
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• 2011

We evaluated the pollution levels of organic matter and metallic element (Fe, Cu, Pb, Zn, Cd, Ni, Cr, Mn, As, and Hg) in the intertidal surface sediments of Aphae Island using several sediment quality guidelines (SQGs) and assessment techniques for sediment pollution. Based on the textural composition of sediment, the surface sediments were classified into two main sedimentary facies: slightly gravelly mud and silt. The concentrations of chemical oxygen demand (COD) and acid volatile sulfide (AVS) in the sediments ranged from 4.6-9.9 (mean $7.4{\pm}1.1$) $mgO_2/g{\cdot}dry$ and from ND-0.53 (mean $0.04{\pm}0.10$) mgS/$g{\cdot}dry$, respectively. These values were considerably lower than those reported from a farming area in a semi-enclosed bay of Korea and for SQGs in Japan. The metallic element concentrations in the sediments varied widely with the mean grain size and organic matter content, implying that the concentrations of metallic elements are influenced mainly by secondary factors, such as bioturbation, the resuspension of sediment, and anthropogenic input. The overall results for the comparison with SQGs, enrichment factor (EF), and geoaccumulation index ($I_{geo}$) indicate that the surface sediments are slightly polluted by Cr and Ni, and moderately polluted by As. Our results suggest that the intertidal surface sediments of Aphae Island are not polluted by organic matter or metallic elements and the benthic conditions are suitable for healthy organisms.

• Journal of Surface Science and Engineering
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• v.47 no.2
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• pp.81-85
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• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of Environmental Health Sciences
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• v.10 no.2
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• pp.41-51
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• 1984

This study was performed using samples collected at Myungryundong and at Reservoirs. The purpose of this study was to investigate the differences of water quality between tap and raw water, and to analyse drinking water quality by Fe, Zn from corroded galvanized steel pipe. Results were as follows 1. The older the pipe was, the higher the concentration of Ferrum and Zinc was (t-test : p<0.05). Ferrum and Zinc also exceeded the limits in the older galvanized steel pipe. I think that this comes from the corrosion of pipe. 2. Mercury, Arsenic, Cadmium, Lead, Chomium, Argentum and Aurum not detected in raw water were not detected in tap water. Cobalt, Bismuth and Molybudenum detected in raw water were not detected in tap water. I think that this comes from the quality of raw water, the result of water treatment and the improbability of detection of above metals in water delivery system. 3. Silicon measured 2.4698ppm in raw water, but it ranged from 0.4769ppm to 1.982 ppm in tap water. Manganese measured 0.0638ppm in raw water, but it ranged from 0.0026ppm to 0.0198ppm in 17cases(31%) out of 55samples in tap water. I think that this comes from the water treatment. 4. Aluminium not detected in raw water was found in 17 cases (31%) out of the samples (55cases). It may be considered as the use of coagulants $Al_2(SO_4)_3$. $18H_2O$ and PAC (Poly Aluminium Chloride). The concentration of copper in tap water was much higher in 2 cases(3.6%) out of the samples(55) than that of copper in raw water. I think that this may come from the use of ${CuSO}_4$, the preventive of algae growth, and the result of chlorination, but further study must be necoessary to support the proof.

• Journal of Surface Science and Engineering
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• v.47 no.5
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• pp.239-243
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• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.

• Journal of Powder Materials
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• v.30 no.2
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• pp.130-139
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• 2023

Thermoelectric materials and devices are energy-harvesting devices that can effectively recycle waste heat into electricity. Thermoelectric power generation is widely used in factories, engines, and even in human bodies as they continuously generate heat. However, thermoelectric elements exhibit poor performance and low energy efficiency; research is being conducted to find new materials or improve the thermoelectric performance of existing materials, that is, by ensuring a high figure-of-merit (zT) value. For increasing zT, higher σ (electrical conductivity) and S (Seebeck coefficient) and a lower κ (thermal conductivity) are required. Here, interface engineering by atomic layer deposition (ALD) is used to increase zT of n-type BiTeSe (BTS) thermoelectric powders. ALD of the BTS powders is performed in a rotary-type ALD reactor, and 40 to 100 ALD cycles of ZnO thin films are conducted at 100℃. The physical and chemical properties and thermoelectric performance of the ALD-coated BTS powders and pellets are characterized. It is revealed that electrical conductivity and thermal conductivity are decoupled, and thus, zT of ALD-coated BTS pellets is increased by more than 60% compared to that of the uncoated BTS pellets. This result can be utilized in a novel method for improving the thermoelectric efficiency in materials processing.

• Korean Chemical Engineering Research
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• v.61 no.4
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• pp.591-597
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• 2023

Pakistan depends heavily on imports for its fuel requirements. In this experiment, catalytic pyrolysis of a blend of feedstock's consisting of date seed, wheat straw, and corn cob was conducted in a fixed bed reactor to produce oil that can be used as an alternative fuel. The main focus was to emphasize the outcome of important variables on the produced oil. The effects of operating conditions on the yield of bio-oil were studied by changing temperature (350-500 ℃), heating rate (10, 15, 20 ℃/min), and particle size (1, 2, 3 mm). Moreover, ZnO was used as a catalyst in the process. First, the thermal degradation of the feedstock was investigated by TGA and DTG analysis at 10 ℃/min of different particle sizes of 1, 2, and 3mm from a temperature range of 0 to 1000 ℃. The optimum temperature was found to be 450 ℃ for maximum degradation, and the oil yield was indicated to be around 37%. It was deduced from the experiment that the maximum production of bio-oil was 32.21% at a temperature of 450 ℃, a particle size of 1mm, and a heating rate of 15 ℃/min. When using the catalyst under the same operating conditions, the bio-oil production increased to 41.05%. The heating value of the produced oil was 22 MJ/kg compared to low-quality biodiesel oil, which could be used as a fuel.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.52 no.1
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• pp.69-80
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• 2007

Among the photoactive semiconductors such as $TiO_2,\;ZnO,\;Fe_2O_3,\;WO_3,\;and\;CdSe,\;TiO_2$ is the most widely used as photocatalyst in different media, because of its lack of toxicity and stability. In this study, the effects of titanium dioxide were investigated to obtain the information of physiological change in rice plant. Light-adapted Chlorophyll flourescence index decreased and relative electron transport rate of rice leaves was activated by titanium dioxide under $2,400\;{\mu}mol\;m^{-2}\;s^{-1}$ PAR (Photosynthetic active radiation). Relative electron transport rate of rice leaf treated with titanium dioxide 10 ppm was high in order of $2,400\;{\mu}mol\;m^{-2}\;s^{-1}\;PAR,\;2,200\;{\mu}mol\;m^{-2}\;s^{-1}\;PAR,\;450\;{\mu}mol\;m^{-2}\;s^{-1}\;PAR$ and titanium dioxide 10 ppm (45.1%), control (32.4%), diuron 10 ppm (15.3%) under $2,400\;{\mu}mol\;m^{-2}\;s^{-1}\;PAR$. Titanium dioxide increased photosynthesis of the rice leaf under $13.6\;KJ\;m^{-2}\;day^{-1}$ UV-B only. With titanium dioxide 20 ppm, reduced UV-B ($0.15\;KJ\;m^{-2}\;day^{-1}$) intensity changed the induction of proteins and twenty-five proteins were identified. Among them, seventy proteins were up-regulated, four proteins were down-regulated and four proteins were newly synthesized. Function of these proteins was related to photosynthesis (52%), carbohydrate metabolism (4%), stress/defense (8%), secondary metabolism (4%), energy/electron transport (4%), and miscellaneous (28%).

• Journal of Environmental Science International
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• v.25 no.11
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• pp.1541-1554
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• 2016

To understand the characteristics of vanadium leaching from soils formed by the weathering of basalts, paleo soil at Gosan, Jeju Island, Korea, and several present-day soils from neighboring areas were collected. Leaching experiments were carried out by two approaches: 1) batch experiments under various geochemical conditions (redox potential (Eh) and pH) and 2) continuous leaching experiments under conditions similar to those of natural environments. From the batch experiments, leached vanadium concentrations were highest under alkaline (NaOH) conditions, with a maximum value of $2,870{\mu}g/L$, and were meaningful (maximum value, $114{\mu}g/L$) under oxidizing ($H_2O_2$) conditions, whereas concentrations under other conditions (acidic-HCl, $neutral-NaHCO_3$, and $reducing-Na_2S_2O_3$) were negligible. This indicated that the geochemical conditions, in which soil-water reactions occurred to form groundwater with high vanadium concentrations, were under alkaline-oxidizing conditions. From the continuous leaching experiments, the pH and leached vanadium concentrations of the solution were in the ranges of 5.45~5.58 and $6{\sim}9{\mu}g/L$, respectively, under $CO_2$ supersaturation conditions for the first 15 days, whereas values under $O_2$ aeration conditions after the next 15 days increased to 8.48~8.62 and $9.7{\sim}12.2{\mu}g/L$, respectively. Vanadium concentrations from the latter continuous leaching experiments were similar to the average concentration of groundwater in Jeju Island ($11.2{\mu}g/L$). Furthermore leached vanadium concentrations in continuous leaching experiments were highly correlated with pH and Al, Cr, Fe, Mn and Zn concentrations. The results of this study showed that 1) alkaline-oxidizing conditions of water-rock (soil) interactions were essential to form vanadium-rich groundwater and 2) volcanic soils can be a potential source of vanadium in Jeju Island groundwater.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.