• Journal of Korean Society for Atmospheric Environment
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• v.19 no.6
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• pp.701-717
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• 2003

The objective of this study was to extensively estimate the air quality trends of the study area by surveying con-centration trends in months or seasons, after analyzing the mass concentration of PM-10 samples and the inorganic lements, ion, and total carbon in PM-10. Also, the study introduced to apply the PMF (Positive Matrix Factoriza-tion) model that is useful when absence of the source profile. Thus the model was thought to be suitable in Korea that often has few information about pollution sources. After obtaining results from the PMF modeling, the existing sources at the study area were qualitatively identified The PM-10 particles collected on quartz fiber filters by a PM-10 high-vol air sampler for 3 years (Mar. 1999∼Dec.2001) in Kyung Hee University. The 25 chemical species (Al, Mn, Ti, V, Cr, Fe, Ni, Cu, Zn, As, Se, Cd, Ba, Ce, Pb, Si, N $a^{#}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, TC) were analyzed by ICP-AES, IC, and EA after executing proper pre - treatments of each sample filter. The PMF model was intensively applied to estimate the quantitative contribution of air pollution sources based on the chemical information (128 samples and 25 chemical species). Through a case study of the PMF modeling for the PM-10 aerosols. the total of 11 factors were determined. The multiple linear regression analysis between the observed PM-10 mass concentration and the estimated G matrix had been performed following the FPEAK test. Finally the regression analysis provided source profiles (scaled F matrix). So, 11 sources were qualitatively identified, such as secondary aerosol related source, soil related source, waste incineration source, field burning source, fossil fuel combustion source, industry related source, motor vehicle source, oil/coal combustion source, non-ferrous metal source, and aged sea- salt source, respectively.ively.y.

• Korean Journal of Environmental Agriculture
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• v.28 no.4
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• pp.333-339
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• 2009

Various cultural practices have been promoted as management options for enhancing soil quality and health. The use of soil management methods can cause changes in fertility by affecting soil chemical properties. This study aimed to evaluate interactions between soil chemical properties and soil management methods in protected cultivation, and to classify soil management methods that similarly affect soil chemical properties. Water-logging and irrigation reduced soil pH and available $P_2O_5$ content. Application of animal manures has a positive effect on levels of organic matter, Av.$P_2O_5$, K, Zn, and Cu. The electrical conductivites tened to be low in the application of organic amendments, including rice and wood residues. Deeper plowing caused a reduction in Ca content. Practicing soil nutrient-considering fertilization and fertigation did not exert an influence on nutrient element contents. In a cluster analysis of the soil management methods according to major nutrients, low similarities were found with deeper plowing and crop rotation with rice in comparison with other practices. In a cluster analysis by minor nutrient characteristics, crop rotation and application of animal manures and rice residues were linked at a high Ward's distance, while other practices were found to be relatively low distinct. Each soil management method has a similar or different effect on soil chemical properties. These results suggest the necessity of establishing limits and standards according to the effects of soil management methods on soil chemical properties for economic soil practices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.285-285
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• 2010

$Cu(In,Ga)Se_2$ (CIGS) 박막 태양전지 제조에는 동시증발법 (co-evaporation)으로 Cu, In, Ga, Se 각 원소의 증발을 세 단계로 제어하여 CIGS 박막을 증착하는 3-stage 방법이 널리 이용된다[1]. 3-stage 중 1st-stage에서는 In, Ga, Se 원소 만을 증발시켜 $(In,Ga)_2Se_3$ 전구체 (precursor) 박막을 성장시킨다. 고효율의 CIGS 태양전지를 위해서는 $(In,Ga)_2Se_3$ 전구체 증착의 공정 변수와 이에 따른 박막 특성의 이해가 중요하다. 본 연구에서는 Mo 박막이 증착된 소다석회유리 (soda lime glass) 기판에 동시증발장비를 이용하여 280 380 의 기판 온도에서 In, Ga, Se 물질을 증발시켜 $(In,Ga)_2Se_3$/Mo/glass 시료를 제작하였으며 XRD, SEM, EDS 등의 방법을 이용하여 특성을 분석하였다. XRD 분석 결과 기판 온도 $280{\sim}330^{\circ}C$에서는 $(In,Ga)_2Se_3$ 박막의 (006), (300) 피크가 관찰되었으며, 기판 온도가 증가할수록 (006) 피크 세기는 감소하였고 (300) 피크 세기는 증가하였다. $380^{\circ}C$에서는 (110)을 포함한 다수의 피크가 관찰되었다. 그레인 (grain) 크기는 기판 온도가 증가할수록 커지며 Ga/(In+Ga) 조성비는 기판 온도에 따라 일정함을 각각 SEM과 EDS 측정을 통해 알 수 있었다. $(In,Ga)_2Se_3$ 전구체의 (300) 배향은 CIGS 박막의 (220/204) 배향을 촉진하고[2], 이것은 높은 광전변환효율에 기여하는 것으로 알려져 있다. 때문에 $(In,Ga)_2Se_3$의 (300) 피크의 세기가 가장 큰 조건인 $330^{\circ}C$를 1st-stage 증착 온도로 하여 3-stage CIGS 태양전지 공정을 수행하였으며, $MgF_2$/Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/glass 구조의 셀에서 광전변환효율 16.96%를 얻었다.

• Molecules and Cells
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• v.28 no.5
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• pp.479-487
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• 2009

Glutathione reductase (GR) is an enzyme that recycles a key cellular antioxidant molecule glutathione (GSH) from its oxidized form (GSSG) thus maintaining cellular redox homeostasis. A recombinant plasmid to overexpress a GR of Brassica rapa subsp. pekinensis (BrGR) in E. coli BL21 (DE3) was constructed using an expression vector pKM260. Expression of the introduced gene was confirmed by semi-quantitative RT-PCR, immunoblotting and enzyme assays. Purification of the BrGR protein was performed by IMAC method and indicated that the BrGR was a dimmer. The BrGR required NADPH as a cofactor and specific activity was approximately 458 U. The BrGR-expressing E. coli cells showed increased GR activity and tolerance to $H_2O_2$, menadione, and heavy metal ($CdCl_2$, $ZnCl_2$ and $AlCl_2$)-mediated growth inhibition. The ectopic expression of BrGR provoked the co-regulation of a variety of antioxidant enzymes including catalase, superoxide dismutase, glutathione peroxidase, and glucose-6-phosphate dehydrogenase. Consequently, the transformed cells showed decreased hydroperoxide levels when exposed to stressful conditions. A proteomic analysis demonstrated the higher level of induction of proteins involved in glycolysis, detoxification/oxidative stress response, protein folding, transport/binding proteins, cell envelope/porins, and protein translation and modification when exposed to $H_2O_2$ stress. Taken together, these results indicate that the plant GR protein is functional in a cooperative way in the E. coli system to protect cells against oxidative stress.

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.474-477
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• 1991

The preferential transport phenomena of neutral cation-anion moieties in neutral macrocycle-facilitated emulsion liquid membrane were described in this study. Emulsion membrane systems consisting of (1) aqueous source phase containing 0.001 M M($NO_3$)$_2(M=Mn^{2+},\;Co^{2+},\;Ni^{2+},\;Cu^{2+},\;Zn^{2+},\;Sr^{2+},\;Cd^{2+},\;and\;Pb^{2+})$ (2) a toluene membrane containing 0.01 M ligand $(DBN_3O_2$, DA18C6, DT18C6, TT18C6, HT18C6) and the surfactant span 80 (sorbitan monooleate) (3% v/v) and (3) an aqueous receiving phase containing $Na_2S_2O_3$ or $NaNO_3$ were studied with respect to the disappearence of transition metal ions from the source phase as a function of time. Cation transports for various two component or three component equimolar mixture of transition metal and $Cu^{2+}$ in a emulsion membrane system incorporating macrocyclic ligand (HT18C6) as carrier were determinded. $Cu^{2+}$ was transported higher rates than the other $M^{2+}$ in the mixture solution. Equilibrium constants for cation-source phase co-anion, cation macrocycle and cation-receiving phase reagent interaction are examined as parameters for the prediction of cation transport selectivities.

• Journal of Surface Science and Engineering
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• v.56 no.2
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• pp.152-159
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• 2023

The night visibility of pavement is being considered as a global issue in the field of traffic safety. Although the spreading glass beads on the lane paints has been mainly used to secure night-visibility by utilizing the effect of retroreflection, obvious shortcoming of this method is that retroflection does not occur in the range where the headlights do not reach the glass beads. The use of functional paints including phosphorescent constituents could be a solution for overcoming fore-mentioned problem. SrAl₂O₄ based chemicals have not only good phosphorescent property, but also are chemically stable compared to existing ZnS based materials. However, this chemicals also need the improvement due to slightly reduced luminous effect in time. Herein, we developed novel paints showing enhanced phosphorescent properties by putting rare earth elements such as Eu, Dy and Y into SrAl₂O₄. These prepared phosphorescent pigments have displayed improved properties in terms of durability and long afterglow. For instance, the property of afterglow has been persisted after 5 hours with luminace of 20.6 mcd/m².

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.18-22
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• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.