• Title/Summary/Keyword: ZnO/ZnS

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Sol-gel deposited TiInO thin-films transistor with Ti effect

  • Kim, Jung-Hye;Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu;Ha, Ki-Ryong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.200-200
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    • 2010
  • In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

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Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun;Nguyen, Cam Phu Thi;Raja, Jayapal;Jang, Kyungsoo;Jung, Junhee;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.324-326
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    • 2016
  • In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors

  • Kim, Hyeong-Jun;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.289.2-289.2
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    • 2016
  • In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

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Detailed Abundance Analysis for Plant Host Stars

  • Kang, Won-Seok;Lee, Sang-Gak;Kim, Kang-Min
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.27.1-27.1
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    • 2011
  • We obtained the spectra of 93 Planet host stars and 73 normal field stars in F, G, K type using BOES at BOAO. We measured the equivalent width of Fe and 25 elements lines using the automatic EW measurement program, TAME(Tools for Automatic Measurement of Equivalent-widths) and estimated the elemental abundances by synth and abfind driver of MOOG code. Since the absence of planets in the normal field stars cannot be "completely" proved, this work focused on the chemical abundances and planet properties of planet host stars, which have the massive planets close to the parent star relatively. We carried out an investigation for the difference of abundances between stars with "Hot Jupiter" and normal field stars with no known planets. We examined the chemical composition of 25 elements, such as C, N, O, S, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Sr, Y, Zr, Ba, Ce, Nd, and Eu by EW measurements, and the S abundances were estimated using synthetic spectrum. We have found that [Mg/Fe] and [Al/Fe] for planet host stars have lower limit comparing with those of comparison stars, and [Ca/Fe] of host star with Neptunian planets is relatively lower than the other host stars with massive planets. We have performed the Kolmogorov-Smirnov test, and examined the ratio of planet host stars to all stars for each bin of [X/H]. As a result, we noted that the O, Si, and Ca abfor undances are strongly related with the presence of planets.

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CIGS 박막 태양전지의 열처리 효과에 대한 전기-광학적 분석

  • Seo, Han-Gyu;Yun, Ju-Heon;Kim, Jong-Geun;Yun, Gwan-Hui;Ok, Eun-A;Kim, Won-Mok;Park, Jong-Geuk;Baek, Yeong-Jun;Seong, Tae-Yeon;Jeong, Jeung-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.398-398
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    • 2011
  • CIGS/CdS/i-ZnO의 hetero junction으로 구성된 CIGS 태양전지는 적색광 광전류-전압 곡선특성이 백색광 곡선에 비해 크게 왜곡된다. 이는 CdS층의 광흡수에 따른 광전도도의 변화가 pn junction의 에너지밴드구조를 변화시키기 때문으로 알려져 있고, 그 정도는 CdS의 deep level acceptor 트랩의 존재와 같은 CdS 박막의 특성과 밀접한 관련이 있는 것으로 판단된다. 따라서, 백색광과 적색광에 의한 광전류-전압 특성의 차이로부터 CdS 및 CdS/CIGS 계면의 전기, 전자적특성을 평가할 수 있을 것으로 기대된다. 특히, 백색광에 비해 적색광에서는 온도가 내려갈수록 광전류-전압의 왜곡이 훨씬 심해지는 것을 확인하였다. 이러한 왜곡현상은 광세기에 의한 영향은 거의 없고, 백색광과 적색광의 광스펙트럼의 변화에 의해 나타났으며, CdS의 blue photon 흡수 여부와 관련이 있는 것으로 판단된다. CIGS 태양전지는 CdS 증착을 전후로 한 열처리가 광전압을 향상시키는 것으로 알려져 있으므로, 본 연구에서는 그러한 열처리에 의한 CdS/CIGS 계면의 특성 변화를 백색광, 적색광에 의한 저온 광전류-전압 특성 측정을 통하여 분석하였다. 열처리는 CdS를 증착한 후 $100^{\circ}C$ 부터 $250^{\circ}C$ 까지 $50^{\circ}C$ 간격으로 진행하였고, 전류-전압 특성은 100K 부터 300K 까지 10K 간격으로 측정하였다. 백색광, 적색광 저온 광전류-전압 특성의 변화를 열처리에 다른 태양전지 셀효율과 비교 분석하였다.

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솔잎 (Pinus Densiflora)부탄올 획분이 간장의 활성산소 및 제거효소에 미치는 영향

  • 김현숙;이지혜;최진호;김대익;박수현;백승진;조원기
    • Journal of Nutrition and Health
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    • v.35 no.3
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    • pp.291-295
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    • 2002
  • This study was designed to investigate the effects of a butanol (BuOH) fraction from an extract of pine (Pinus densiflora Sieb et Zucc.) needles, on oxygen radicals and their scavenger enzymes in the liver membranes of rats. Twenty-eight male Sprague-Dawley (SD) rats were divided into four groups over a 45 days study period: the control group on a basic diet, and three experimental groups on three different dietary levels of the butanol fraction, specifically 25 mg (BuOH-25), 50 mg (BuOH-50), and 100 mg (BuOH-100) butanol fraction/kg body weight/day, thereby 0.025%, 0.05%, 0.1% of butanol extract of pine needles was added to basil diet respectively. At the end of the experimental period, body weights and food intakes were not different among the four groups. The results showed that cholesterol accumulation in the mitochondria and microsomes of liver cells was significantly inhibited in the BuOH-50 and BuOH-100 groups: by 11.6% and 20.1% in the mitochondria of the BuOH-50 and BuOH-100 groups, respectively; and by 10.5%, and 13.5% in the microsomes of the BuOH-50 and BuOH-100 groups, respectively, compared with the control group. The levels of hydroxyl radicals (.OH) were significantly) lower in the liver mitochondria of the BuOH-50 and BuOH-100 groups (by 13.3% and 18.5%, respectively), while OH radicals were significantly lower in the microsomes or all three experimental groups (by 15.7% in the BuOH-25 group, 20.0% in the BuOH-50 group, and 20.6% in the BuOH-100group), compared with the control group. Superoxide radical (O$_2$) formation was also significantly inhibited in the liver cytosol of both BuOH-50 and BuOH-100 groups; the levels of these radicals were 8.0% lower for the BuOH-50 group and 11.1% lower for the BuOH-100 group, compared to the control group. Copper/Zinc - superoxide dismutase (Cu/Zn-SOD) activities were significantly increased (by 10.3% and 15.9%, respectively) in the liver cytosols of the BuOH-50 and BuOH-100 groups, but Mn-SOD activities were almost identical in the three RuOH groups, compared with the control group. Glutathione peroxidase (GPx) activities were significantly increased in the three experimental groups (by 9.0% in the BuOH-25 group, 19.4% in the BuOH-50 group, and by 25.6% in the BuOH-100 group), compared with the control group. These results suggest that the butanol extract of pine needles may play an effective role in attenuating oxygen radicals and activating scavenger enzymes; consequently, aging may be very effectively modulated and/or inhibited.

Shortwave Infrared Photodetector based on PbS Quantum Dots for Eye-Safety Lidar Sensors (Eye safety 라이다 센서용 황화납 양자점 기반 SWIR photodetector 개발)

  • Suji Choi;JinBeom Kwon;Yuntae Ha;Daewoong Jung
    • Journal of Sensor Science and Technology
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    • v.32 no.5
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    • pp.285-289
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    • 2023
  • Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR) photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are based on InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition, current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damage to the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more to be safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compound semiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of being simple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, and a SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HT and ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDs had excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximum current change of about 1.6 times.

The Synthetic Study of Environmental Contamination at the Seokdae Municipal Waste Landfill in Pusan (부산 석대 생활폐기물 매립장의 환경오염에 대한 종합적 연구)

  • 김병우;정상용;이민희;이병헌
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2001.04a
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    • pp.98-103
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    • 2001
  • In order to understand the characteristics of leachate at the Seokdae municipal waste landfill in the Pusan city, the correlation between leachate pollution loading and volume of gas production. concentration of gas and subsidence of ground, the characteristical methos, geochemical analyses and laboratory column tests using samples of gases, leachate and surface soil of Seokdae waste landfill area. Through the analysis of water balance, leachate flow rate and pollution loading were estimated. Geistatistical analysis of four gas components ( $O_2$, C $H_4$, $H_2$S and CO) shows the possibility of ground subsidence around the group of a site with high concentration of gas. From geochemical analyses of leachate, EC and Total-Alkalinity of ground subsidence around the group of a site with high concentration of gas. From geochemical analysis of leachate, Ec and Total-Alkalinity were increased, and Cl, Cr, Mn, Cu, Zn, Cd and Pb were decreassed comparing to the part, and the type of water quality was Na-HC $O_3$ in trilinear diagram. It shows that biodecomposition of municipal wastes continues actively. From the analysis of water balance, the total leachate flow rate is about 465.11㎥/day and pure pollution loading of Cl, Mn and Fe are estimated to 223.8kg/day, 0.2kg/day, 0.3kg/day, respectively. The laboratory column test of residual soil and landfill soil shows 0.206cm and 0.019cm for linear velocity(equation omitted), 0.234 $\textrm{cm}^2$/min and 0.018$\textrm{cm}^2$/min for diffusion coefficient ( $D_{ι}$), and 1.136cm and 0.095cm longitudinal dispersion index ($\alpha$$_{ι}$), respective]y. It demonstrates that the delay time of contamination for residual soil is shorter than that of landfill soil.

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Growth of Chrysanthemum Cultivars as Affected by Silicon Source and Application Method

  • Sivanesan, Iyyakkannu;Son, Moon Sook;Soundararajan, Prabhakaran;Jeong, Byoung Ryong
    • Horticultural Science & Technology
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    • v.31 no.5
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    • pp.544-551
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    • 2013
  • The effect of different silicon (Si) sources and methods of application on the growth of two chrysanthemum cultivars grown in a soilless substrate was investigated. Rooted terminal cuttings of Dendranthema grandiflorum 'Lemmon Eye' and 'Pink Eye' were transplanted into pots containing a coir-based substrate. A nutrient solution containing 0 or $50mg{\cdot}L^{-1}$ Si from calcium silicate ($CaSiO_3$), potassium silicate ($K_2SiO_3$) or sodium silicate ($Na_2SiO_3$) was supplied once a day through an ebb-and-flood sub irrigation system. A foliar spray of 0 or $50mg{\cdot}L^{-1}$ Si was applied twice a week. Cultivar and application method had a significant effect on plant height. Cultivar, application method, and Si source had a significant effect on plant width. Of the three Si sources studied, $K_2SiO_3$ was found to be the best for the increasing number of flowers, followed by $CaSiO_3$ and $Na_2SiO_3$. In both the cultivars, sub irrigational supply of Si developed necrotic lesions in the older leaves at the beginning of the flowering stage as compared to the control and foliar spray of Si. Cultivar, application method, Si source, and their interactions had significant influence on leaf tissue concentrations of calcium (Ca), potassium (K), phosphorus (P), magnesium (Mg), sulfur (S), sodium (Na), boron (B), iron (Fe), and zinc (Zn). The addition of Si to the nutrient solution decreased leaf tissue concentrations of Ca, Mg, S, Na, B, Cu, Fe, and Mn in both cultivars. The greatest Si concentration in leaf tissue was found in 'Lemmon Eye' ($1420{\mu}g{\cdot}g^{-1}$) and 'Pink Eye' ($1683{\mu}g{\cdot}g^{-1}$) when $K_2SiO_3$ was applied through a sub irrigation system and by foliar spray, respectively.

Studies on the Citric Acid Fermentation with Fungi (Part IV) Citric Acid Fermentation from Soluble Starch and Molasses (사상균에 의한 구연산발효에 관한 연구 (제IV보) 가용성전분 및 당밀에 의한 구연산발효)

  • 성낙계;김명찬;심기화;정덕화
    • Microbiology and Biotechnology Letters
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    • v.8 no.3
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    • pp.199-206
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    • 1980
  • Some experiments on the citric acid production were carried out from soluble starch and molasses as raw materials. When soluble starch was used as substrate for the fermentation of citric acid by the strain M-80 which had assimilating ability of soluble starch in surface culture, the optimal culture media was 120g of soluble starch, 3.0g of (N $H_4$)$_2$S $O_4$, 2.0g of K $H_2$P $O_4$, 0.2g of MgS $O_4$.7$H_2O$, 1.5mg of F $e^{++}$, 1mg of Z $n^{++}$ and 20ml of methanol were added to 1 liter and optimal pH was 5.5. In about 8 days 61.8mg/ml of citric acid was produced. When treated molasses with potassium ferrocyanide was used as substrate for the fermentation of citric acid by the strain of M-315, the optimal condition in surface culture was 250g of molasses, 0.3g of N $H_4$N $O_3$, 0.05g of K $H_2$P $O_4$, 0.01g of MgS $O_4$.7$H_2O$, 0.5g of Potassium ferrocyanide and 30ml of methanol were added to 1.0 liter. On the other hand, the optimal condition in submersed culture was 250g of molasses, 0.3g of N $H_4$N $O_3$, 0.1g of K $H_2$P $O_4$, 0.01g of MgS $O_4$.7$H_2O$, 0.5g of potassium ferrocyanide, and 30m1 of methanol were added to 1.0 liter and optimal pH was all 5.0. After 9 days culture, 69.4mg/ ml, 39.6mg/ml of citric acid were separately produced in surface and submerged culture media.dia.

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