• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.88-88
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• 2009

실리콘 이종접합 태양전지 제작을 위한 주요 요소기술 중 TCO/a-Si:H 간의 계면 특성은 태양전지 효율을 결정하는 주요 인자이다. 일반적으로 투명전도 산화막으로는 ZnO:Al 또는 ITO 가 사용되고 있으며 Zn, In, Sn, O 등의 확산과 Si원소의 확산으로 TCO/a-Si:H 계면에서 $SiO_x$가 생성되어 태양전지 충진률을 감소시키는 영향을 미친다. 따라서 본 연구에서는 TCO/a-Si 계면에서 확산을 방지 하면서 패시베이션 역할을 하는 완충층을 삽입하여 실리콘 이종접합 태양전지의 효율을 높이는 연구를 수행하였다. 완충층으로 사용된 ZnO:Al의 수소화와 Zn 박막, $TiO_2$ 박막의 전기 광학적 특성을 분석하였고 AES 분석을 통해 $SiO_x$의 생성과 각 원소의 확산정도를 분석하고, CTLM을 이용하여 TCO/완충층/a-Si 간의 접촉저항을 측정하였다. 결과적으로 완충층으로 사용된 $TiO_2$(5nm)는 광특성에 큰 감소요인 없이 전기적 특성과 접촉저항 특성이 우수하였으며, 원소들간의 확산방지층으로도 우수한 특성을 보였다. ZnO:Al의 수소화는 SIMS 분석 결과 수소원소들이 계면쪽에 위치하지 않고 표면쪽에 다수 존재함으로써 패시베이션 특성을 크게 보이지 않았으나 AZO 박막의 전기적 특성은 크게 향상 시켰다. 그밖에 완충층으로 사용된 Zn 박막은 두께가 두꺼원 질수록 접촉저항의 감소를 가져왔으나 광학적 특성이 크게 감소하면서 효율적인 광포획 특성을 가지지 못하였다. 본 연구를 통하여 TCO/a-Si:H 간의 완충층 삽입을 통해 접촉저항을 낮추고 원소간의 확산을 억제하여 계면 패시베이션 특성을 향상 시킬수 있었다.

• Journal of Powder Materials
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• v.15 no.1
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• pp.1-5
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• 2008

ZnS-$SiO_2$ composite is normally used for sputtering target. In recent years, high sputtering power for higher deposition rate often causes crack formation of the target. Therefore the target material is required that the sintered target material should have high crack resistance, excellent strength and a homogeneous microstructure with high sintered density. In this study, raw ZnS and ZnS-$SiO_2$ powders prepared by a 3-D mixer or high energy ball-milling were successfully densified by spark plasma sintering, the effective densification method of hard-to-sinter materials in a short time. After sintering, the fracture toughness was measured by the indentation fracture (IF) method. Due to the effect of crack deflection by the residual stress occurred by the second phase of fine $SiO_2$, the hardness and fracture toughness reached to 3.031 GPa and $1.014MPa{\cdot}m^{1/2}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.546-546
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• 2013

Zinc silicate ($Zn_2SiO_4$) has been identified as a suitable host material for a wide variety of luminescent activators, such as transition metal and rare earth elements. In particular, manganese-activated $Zn_2SiO_4$ exhibits highly efficient photoluminescenceand cathodoluminescence, which allows this material to be used in fluorescent lamps and display applications. In this study, we investigated the green and yellow luminescence from Mn-doped $Zn_2SiO_4$ thin films that were synthesized using radio frequency magnetron sputtering followed by annealing at $600{\sim}1,200^{\circ}C$ The refractive index of the $Zn_2SiO_4$: Mn films showed normal dispersion behavior. It was found that the $Zn_2SiO_4$: Mn films annealed at $800^{\circ}C$ ossessed a mixture of alpha and beta phases. The obtained photoluminescence spectrum consisted of two emission bands centered at 525 nm in the green range and 574 nm in the yellow range. The green luminescence originates from the divalent Mn ions in alpha phase of $Zn_2SiO_4$, while the yellow luminescence comes from the divalent Mn ions in beta phase. The films annealed at and above $900^{\circ}C$ xhibited only the alpha phase. The broad PL excitation band was observed ranging from 220 to 300 nm with a maximum at around 243 nm.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2333-2337
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• 2012

We report the synthesis and thermal annealing of Si-core/ZnO-shell nanorods using a two-step process comprising the metal-assisted electroless etching of Si and the sputter deposition of ZnO. Transmission electron microscopy and X-ray diffraction analysis showed that the cores of the annealed core-shell nanorods were single crystal diamond cubic-type Si, whereas the shells of the annealed core-shell nanorods were single crystal wurtzite-type ZnO. The PL spectra of Si nanorods consisted of a broad red emission band and a weaker blue emission band. The major emission band of Si nanorods was shifted from 700 nm (in the red region) to 440 nm (in the violet region) by ZnO coating. The violet emission of the core-shell nanorods was enhanced in intensity considerably by annealing in an oxidizing atmosphere. The origin of the PL enhancement by annealing is also discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.143-144
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• 2007

저온 성장이 가능한 MOCVD를 이용하여 단결정 p-Si 기판위에 n-ZnO를 산소분압을 달리하여 성장하였다. 산소유량에 따른 이종접합 다이오드의 전기적 특성을 평가하기위하여 n-ZnO의 전기전도도, 이동도, 캐리어 농도를 측정하였으며, 소자에 저항성 접촉(ohmic contact) 전극을 형성하여 전류-전압 특성을 파악하였다.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.141-146
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• 2014

A series of bimetallic Cu-Zn/$SiO_2$ catalysts were prepared via thermal decomposition of the as-synthesized $CuZn(OH)_4(H_2SiO_3)_2{\cdot}nH_2O$ hydroxides precursors. This highly dispersed Cu-solid base catalyst is extremely effective for hydrogenation of ethyl acetate to ethanol. The reduction and oxidation features of the precursors prepared by coprecipitation method and catalysts were extensively investigated by TGA, XRD, TPR and $N_2$-adsorption techniques. Catalytic activity by ethyl acetate hydrogenation of reaction temperatures between 120 and $300^{\circ}C$, different catalyst calcination and reduction temperatures, different Cu/Zn loadings have been examined extensively. The relation between the performance for hydrogenation of ethyl acetate and the structure of the Cu-solid base catalysts with Zn loading were discussed. The detected conversion of ethyl acetate reached 81.6% with a 93.8% selectivity of ethanol. This investigation of the Cu-Zn/$SiO_2$ catalyst provides a recently proposed pathway for ethyl acetate hydrogenation reaction to produce ethanol over Cu-solid base catalysts.

• Journal of the Korean Chemical Society
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• v.43 no.2
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• pp.206-212
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• 1999

The main objective of the present investigation is to improve the photoluminescent performance of existing $Zn_2SiO_4:Mn$ phosphors by introducing a new co-dopant. The co-doping effect of Mg and/or Cr upon emission intensity and decay time was studied in the present investigation. The co-dopants incorporated into the $Zn_2SiO_4:Mn$ phosphors are believed to alter the internal energy state so that the change in emission intensity and decay time can be expected. Both Mg and Cr ions have a favourable influence on photoluminescence prpperties, for example, the Mg ion enhances the intensity of manganese green emission and the Cr ion shortens the decay time. The enhancement in emission intensity of $Zn_2SiO_4:Mn,\;Mg$ phosphors was interpreted by taking into account the result from the DV-X${\alpha}$ embedded cluster calculation. On the other hand, the energy transfer between Mn and Cr ions was found to be responsible for the shortening of decay time in$Zn_2SiO_4:Mn,\;Cr$ phosphors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.4
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• pp.154-161
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• 2017

$Zn_2TiO_4$, which is a progenitor of zinc crystallization, plays a significant role in controlling the crystallization of willemite ($Zn_2SiO_4$) in forming glaze at low temperatures. Thus, $Zn_2TiO_4$ was used to formulate stable willemite and to gain structural control. When synthesized 15 wt% of $Zn_2TiO_4$ is added to engobe and then applied, it can manipulate its crystallization and location. Additionally, when colorant is added to $Zn_2TiO_4$ and then applied to engobe, the mixture's colorant effect can be shown at crystallization. Certain characteristics of synthesized $Zn_2TiO_4$ enable various engobes to be applied to clay bodies. With a single glazing, the crystallization, location, and color of the crystals can be discretionarily regulated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.18.2-18.2
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• 2000