• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.169-169
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• 2009

ZnO varistor에서 희토류 산화물의 첨가는 비선형계 높게 만든다. 회토류 금속의 첨가로 높아진 비저항을 낮추기 위하여 3족 원소인 Al, Ga을 첨가하여 첨가 함량에 따른 ZnO-$Pr_6O_{11}$ varistor의 비저항을 낮추고자 한다. 따라서 본 연구에서는 Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$을 일반적인 세라믹 공정에 따라 제조하여, Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$ varistor의 특성을 미세구조 조직, 밀도, I-V 특성, 비저항 측정하였다. ZnO의 bulk 및 grain boundary 특성 변화를 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, $tan{\delta}$)를 이용하여 고찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Korean Journal of Chemical Engineering
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• v.36 no.2
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• pp.191-196
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• 2019

The phase of Cu,Zn,Al precursors strongly affects the activity of their final catalysts. Herein, the Cu,Zn,Al precursor was prepared by precipitation of $Al^{3+}$ onto primitive, amorphous Cu,Zn precipitate. This precursor turned out to be a phase mixture of zincian malachite and hydrotalcite in which the latter phase was less abundant compared to the co-precipitated precursor. The final catalyst derived from this precursor exhibited a little higher copper surface area and methanol synthesis activity than the co-precipitated counterpart. Therefore, the two precursor phases need to be mixed in an adequate proportion for the preparation of active $Cu/ZnO/Al_2O_3$ catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• Journal of the Korean Society for Heat Treatment
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• v.6 no.2
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• pp.89-97
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• 1993

An improvement in corrosion resistance of various types of Zn-coated steel sheets is thought to be possible with the addition of fine oxide powder to the coating. In this study the corrosion resistance of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheet has been investigated and the results were as follows : The corrosion resistance of $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets was improved by increasing the contents of Co and Cr ions, and also $Al_2O_3$ powders in the bath because of the increased amount of Co, Cr and $Al_2O_3$ in deposits. In the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steels sheet, the structure of deposits was changed from fine microstructure as observed in high Co containing deposits to coarse microstructure as in high Cr and $Al_2O_3$ containing deposits. By cold rolling of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets to about 2 percent, thr corrosion resistance was improved further.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.51-59
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• 2000

Sink roll has been used in molten 55%Al-Zn alloy bath of continuous galvanizing line for sinking and stabilizing working steel strip in molten metal bath. In the process, the sink roll body inevitably build up dross compounds and pitting on the sink roll surface during 55%Al-Zn alloy coated strip production, and the life time of the sink roll is shorten by build up dross compounds and pitting. The present study examined the application of thermally sprayed ceramic coatings method on sink roll body for improving erosion resistance at molten 55% Al-Zn pool. In this experiment, the stainless steels such as STS 316L and STS 430F were used as the substrate materials. The CoNiCr and WE-Co powder were selected as bond coating materials. Moreover $Al_2O_3-ZrO_2-SiO_2 and ZrO_2-SiO_2$ powders selected as the top coating materials. Appearances of the specimens before and after dipping to molten 55%Al-Zn pool were compared and analyzed. As a result of this study, STS430F of substrate, WC-Co of bond spray coatings, $ZrO_2-SiO_2$ power of top spray coatings is the best quality in erosion resistance test at molten 55%Al-Zn pool

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.191-191
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• 2003

가시광선영역에서 높은 광학적 투명도를 갖는 n-type 반도체인 ZnO 박막은 넓은 범위에서 응용되고 있다. 현재 ZnO 박막의 특성 향상을 위하여 여러 원소(Al, Ga)의 도핑을 시도하고 있다. 특히 Al-doped ZnO 박막은 sol-gel dip coating에 의해서도 높은 전기전도도와 투과율로 활발히 연구되고 있다 본 논문에서는 여러 도핑농도를 갖는 Al-doped ZnO 박막이 sol-gel dip coating법에 의해 준비되었다. Al-doped ZnO 박막은 zinc acetate [Zn($CH_3$COO$_2$)ㆍ2$H_2O$] powder 와 여러 도핑농도를 갖는 aluminum nitrate (Al(NO$_3$)$_3$ㆍ9$H_2O$) powder를 알코올에 용해하여 $H_2O$, Ethylene glycol, Ethylene diamine 등을 첨가하여 제조하였다 XRD와 SEM (Scanning electron microscope)이 막의 상형성 분석을 위해 이용되었으며, 가시광선 영역 투과율(UV/VIS spectrophotometer)과 표면전기저항(four point probe)이 주요 특성으로 분석되었다.