• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.358-363
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• 2015

We present an excellent detection for nitrogen monoxide (NO) gas using polycrystalline ZnO wire-like films synthesized via a simple method combined with sputtering of Zn metallic films and subsequent thermal oxidation of the sputtered Zn nanowire films in dry air. Structural and morphological characterization revealed that it would be possible to synthesize polycrystalline hexagonal wurtzite ZnO films of a wire-like nanostructure with widths of 100-150 nm and lengths of several microns by controlling the sputtering conditions. It was found from the gas sensing measurements that the ZnO wire-like thin film gas sensor showed a significantly high response, with a maximum value of 29.2 for 2 ppm NO at $200^{\circ}C$, as well as a reversible fast response to NO with a very low detection limit of 50 ppb. In addition, the ZnO wire-like thin film gas sensor also displayed an NO-selective sensing response for NO, $O_2$, $H_2$, $NH_3$, and CO gases. Our results illustrate that polycrystalline ZnO wire-like thin films are potential sensing materials for the fabrication of NO-sensitive high-performance gas sensors.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.105-105
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• 2011

ZnO is a promising material since it could be applied to many fields such as solar cells, laser diodes, thin films transistors and gas sensors. ZnO has a wide and direct band gap for about 3.37 eV at room temperature and a high exciton binding energy of 60 meV. In particular, ZnO features high sensitivity to toxic and combustible gas such as CO, NOX, so on. The development of gas sensors to monitor the toxic and combustible gases is imperative due to the concerns for enviromental pollution and the safety requirements for the industry. In this study, we investigated the effect of substrate temperature and post-annealing on structural and electrical properties of ZnO thin films. ZnO thin films were deposited by pulsed laser deposition (PLD) at various temperatures at from room temperature to $600^{\circ}C$. After that, post-annealing were performed at $600^{\circ}C$. To inspect the structural properties of the deposited ZnO thin films, X-ray diffraction (XRD) was carried out. For gas sensors, the morphology of the films is dominant factor since it is deeply related with the film surface area. Therefore, the atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM) were used to observe the surface of the ZnO thin films. Furthermore, we analyzed the electrical properties by using a Hall measurement system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.105-105
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1564-1567
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• 2005

Zinc oxide thin films were grown at the t emperature of $100^{\circ}C$ and $150^{\circ}C$ by means of plasma enhanced atomic layer deposition (PEALD) and conventional atomic layer deposition for applying to the transparent thin film transistor (TTFT). The growth rate of $1.9{\AA}/cycle$ with oxygen plasma is similar to that of film grown with water. While the sheet resistivity of ZnO grown with water is 1233 ohm/sq, that of film grown with oxygen plasma was too high to measure with 4 point probe and hall measurement system. The resistivity of the films grown with oxygen plasma estimated to be $10^6$ times larger than that of the films grown with water. The difference of electrical property between two films was caused by the O/Zn atomic ratio. We fabricated ZnO-TFT by means of ALD for the first time and the ZnO channel fabricated with water showed saturation mobility of $0.398cm^2/V{\cdot}s$ with bottom gate configuration.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.288-293
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• 2013

Zn-In-Sn-O films were prepared at room temperature by combinatorial RF-magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The effects of the oxygen partial pressure and film compositionon the structural and electrical properties were investigated. The Zn-In-Sn-O films deposited at Ar gas atmosphere showed an amorphous phaseirrespective of the film composition. However, the amorphous Zn-In-Sn-O films with a Zn content below 30.0 at% were converted into a bixbyite type-ITO polycrystalline phase with an increase in the oxygen partial pressure. The resistivity, carrier concentration, and Hall mobility were strongly affected by the oxygen partial pressure and chemical composition of the film. At sufficiently high carrier densities above $5{\times}10^{18}cm^{-3}$, the conduction behavior of amorphous Zn-In-Sn-O film changes from thermally activated to degenerate band conduction accompanied with high mobility.