• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.99-102
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• 1997

An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4199-4204
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• 2011

Using models simulating the environment of two distinct adsorption sites of $H_2$ in metal-organic framework-5 (MOF-5), binding energies of $H_2$ to MOF-5 were evaluated at the MP2 and CCSD(T) level. For organic linker section modeled as dilithium 1,4-benzenedicarboxylate ($C_6H_4(COO)_2Li_2$), the MP2 and CCSD(T) basis set limit binding energies are estimated to be 5.1 and 4.4 kJ/mol, respectively. For metal oxide cluster section modeled as $Zn_4O(CO_2H)_6$, while the MP2 basis set limit binding energy estimate amounts to 5.4 kJ/mol, CCSD(T) correction to the MP2 results is shown to be insignificant with basis sets of small size. Substitution of benzene ring with pyrazine ring in the model for the organic linker section in MOF-5 is shown to decrease the $H_2$ binding energy noticeably at both the MP2 and CCSD(T) level, in contrast to the previous study based on DFT calculation results which manifested substantial increase of $H_2$ binding energies upon substitution of benzene ring with pyrazine ring in the similar model.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.43-47
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• 2014

NiO-doped hibonite pigments were synthesized by the solid state method to get stabilized blue color pigment in both oxidation and reduction atmospheres. Optimum substitution condition with NiO for hibonite blue pigment was investigated. Experimental results were comparable to those of previous cobalt-minimization studies performed with other phosphate- or oxide-based cobalt-containing ceramic pigments (having olivine ($Co_2SiO_4$), spinel ($CoAl_2O_4$), or with co-doped willemite ($(Co,Zn)_2SiO_4$) structures). Composition was designed varying the NiO molar ratio increasing with $SnO_2$. The optimum substitution content is 0.93 mole NiO with 0.75mole $SnO_2$. The characteristics of the synthesized pigment were analyzed by XRD, Raman spectroscopy, SEM, and UV-vis. Synthesized pigment was applied to a lime-barium glaze with 10 wt% each and fired at an oxidation atmosphere of $1250^{\circ}C/1h$ and a reducing atmosphere $1240^{\circ}C/1h$. Blue color was obtained with $L^*a^*b^*$ values at 43.39, -6.78, -18.20 under a reducing atmosphere and 41.66, -6.36, -14.7 under and oxidation atmosphere, respectively.

• Journal of Electrochemical Science and Technology
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• v.9 no.4
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• pp.308-319
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• 2018

Single step electrodeposition of $Cu_2ZnSnS_4$ (CZTS) for solar cell applications was studied using an aqueous thiocyanate based electrolyte. The sodium thiocyanate complexing agent was found to decrease the difference in the deposition potential of the elements. X-ray diffraction analysis of the samples indicates the formation of kesterite phase CZTS. UV-vis studies reveal the band gap of the deposits to be in the range of 1.2 - 1.5 eV. The thickness of the deposit was found to decrease with increase in pH of the electrolyte. Nearly stoichiometric composition was obtained for CZTS films coated at pH 2 and 2.5. I-V characterization of the film with indium tin oxide (ITO) substrate in the presence and the absence of light source indicate that the resistance decrease significantly in the presence of light indicating suitability of the deposits for solar cell applications. Results of electrochemical impedance spectroscopic studies reveal that the cathodic process for sulfur reduction is the slowest among all the elements.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.195-204
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• 2023

Micro-electronic gas sensor devices were developed for the detection of carbon monoxide (CO), nitrogen oxides (NO_x), ammonia (NH₃), and formaldehyde (HCHO), as well as binary mixed-gas systems. Four gas sensing materials for different target gases, Pd-SnO₂ for CO, In₂O₃ for NO_x, Ru-WO₃ for NH₃, and SnO₂-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were then fabricated using a micro sensor platform. The gas sensing behavior and sensor response to the gas mixture were examined for six mixed gas systems using the experimental data in MEMS gas sensor arrays in sole gases and their mixtures. The gas sensing behavior with the mixed gas system suggests that specific adsorption and selective activation of the adsorption sites might occur in gas mixtures, and allow selectivity for the adsorption of a particular gas. The careful pattern recognition of sensing data obtained by the sensor array made it possible to distinguish a gas species from a gas mixture and to measure its concentration.

• Economic and Environmental Geology
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• v.39 no.6 s.181
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• pp.653-662
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• 2006

Quartz veins from the Jukwangri area of Hwawon-myeon are epithermal quartz veins that are filling the NW or NE-trending faults within Precambrian metasedimentary rocks. Based on their prolongation and ore grades, No. 1 quartz vein can be traced for about 200 m and varies 0.1 to 3 m in thickness. Mineralization of No. 1 quartz vein can be divided into hypogene and supergene stages. Hypogene stage is associated with hydrothermal alteration minerals(phyllic and argillic zones) such as illite, sericite and sulfides such as pyrite, arsenopyrite, sphalerite. chalcopyrite, galena, argentian tetrahedrite. Supergene stage is composed of Fe-Mn oxide, Zn-Fe oxide and Pb oxide. Fluid inclusion data indicate that homogenization temperature and salinity of hypogene stage range from 187 to $306^{\circ}C$ and ken 0.0 to 6.2 wt.% eq. NaCl, respectively. They suggest that ore forming fluids were progressively cooled and diluted from mixing with meteoric water. Oxygen($-4.1{\sim}4.1%o$) and hydrogen($-107{\sim}-88%o$) isotope com-positions indicated that hydrothermal fluids were derived from meteoric and evolved by progressive mixing with meteoric water during mineralization.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of Microbiology and Biotechnology
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• v.24 no.1
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• pp.87-96
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• 2014

In the present study, a yeast species isolated from CETP, Vellore, Tamilnadu was identified as Cryptococcus sp. VITGBN2 based on molecular techniques and was found to be a potent producer of acidic diacetate sophorolipid in mineral salt media containing vegetable oil as additional carbon source. The chemical structure of the purified biosurfactant was identified as acidic diacetate sophorolipid through GC-MS analysis. This sophorolipid was used as a stabilizer for synthesis of zinc oxide nanoparticles (ZON). The formation of biofunctionalized ZON was characterized using UV-visible spectroscopy, XRD, scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy. The antimicrobial activities of naked ZON and sophorolipid functionalized ZON were tested based on the diameter of inhibition zone in agar well diffusion assay, microbial growth rate determination, protein leakage analysis, and lactate dehydrogenase assay. Bacterial pathogen Salmonella enterica and fungal pathogen Candida albicans showed more sensitivity to sophorolipid biofunctionalized ZON compared with naked ZON. Among the two pathogens, S. enterica showed higher sensitivity towards sophorolipid biofunctionalized ZON. SEM analysis showed that cell damage occurred through cell elongation in the case of S. enterica, whereas cell rupture was found to occur predominantly in the case of C. albicans. This is the first report on the dual role of yeast-mediated sophorolipid used as a biostabilizer for ZON synthesis as well as a novel functionalizing agent showing antimicrobial property.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.