• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.215-220
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• 2012

ZnO nanoparticles were synthesized through a facile route and were used as ozonation catalysts. With the increase of calcination temperature ($150-300^{\circ}C$), surface hydroxyl groups and catalytic efficiency of asobtained ZnO decreased remarkably, and the ZnO obtained at $150^{\circ}C$ showed the best catalytic activity. Compared with ozonation alone, the degradation efficiency of phenol increased above 50% due to the catalysis of ZnO-150. In the reaction temperatures range from $5^{\circ}C$ to $35^{\circ}C$, ZnO nanocatalyst revealed remarkable catalytic properties, and the catalytic effect of ZnO was better at lower temperature. Through the effect of tertbutanol on degradation of phenol and the catalytic properties of ZnO on degradation of nitrobenzene, it was proposed that the degradation of phenol was ascribed to the direct oxidation by ozone molecules based on solidliquid interface reaction.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.558-563
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• 2006

The electrical and dielectric properties of $ZnO-Pr_6O_{11}CoO-Cr_2O_3La_2O_3-based$ nonlinear resistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{|circ}C$. As the sintering temperature increased, the breakdown voltage decreased from 777.9 to 108.0V/mm, the nonlinear coefficient greatly decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor density from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The dielectric dissipation factor increased from 0.0879 to 0.2839 for the increase of sintering temperature.

• Smart Structures and Systems
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• v.23 no.4
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• pp.387-392
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• 2019

This research deals with the vibration analysis of embedded smart concrete plate reinforced by zinc oxide (ZnO). The effective material properties of structure are considered based on mixture rule. The elastic medium is simulated by orthotropic visco-Pasternak medium. The motion equations are derived applying Sinusoidal shear deformation theory (SSDT). The differential quadrature (DQ) method is applied for calculating frequency of structure. The effects of different parameters such as volume percent of ZnO, boundary conditions and geometrical parameters on the frequency of system are shown. The results are compared with other published works in the literature. Results indicate that the ZnO have an important role in frequency of structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.421-425
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• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.139-145
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• 2019

Precautionary detection of chemical warfare agents (CWAs) has been an important global issue mainly owing to their toxicity. To achieve proper detection, many studies have been conducted to develop sensitive gas sensors for CWAs. In particular, metal-oxide semi-conductors (MOS) have been investigated as promising sensing materials owing to their abundance in nature and excellent sensitivity. In this review, we mainly focus on various MOS-based gas sensors that have been fabricated for the detection of two specific CWA simulants, 2-chloroethyl ethyl sulfide (2-CEES) and dimethyl methyl phosphonate (DMMP), which are simulants of sulfur mustard and sarin, respectively. In the case of 2-CEES, we mainly discuss $CdSnO_3-$ and ZnO-based sensors and their reaction mechanisms. In addition, a method to improve the selectivity of ZnO-based sensors is mentioned. Various sensors and their sensing mechanisms have been introduced for the detection of DMMP. As the reaction with DMMP may directly affect the sensing properties of MOS, this paper includes previous studies on its poisoning effect. Finally, promising sensing materials for both gases are proposed.