• Title/Summary/Keyword: Zn-V-based ceramics

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Influence of Dy2O3 Addition on Microstructure and Electrical Properties of Pr6O11 Varistor Ceramics (Pr6O11계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy2O3첨가의 영향)

  • Nahm, Choon-Woo;Park, Jong-Ah
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.645-650
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    • 2003
  • The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.

Microstructure and Varistor Properties of ZVMND Ceramics with Sintering Temperature

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.221-225
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    • 2015
  • The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V2O5-MnO2-Nb2O5-Dy2O3-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm3 and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm2 in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.

Effect of Low-Temperature Sintering on Electrical Properties and Aging Behavior of ZVMNBCD Varistor Ceramics

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.502-508
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    • 2020
  • This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V2O5-MnO2-Nb2O5-Bi2O3-Co3O4-Dy2O3 (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V2O5, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫EB/EB and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 EB/85 ℃/24 h).

Effect of Cooling Rate on DC Accelerated Aging Characteristics of ZPCCY-Based Varistor Ceramics (ZPCCY계 바리스터 세라믹스의 DC 가속열화 특성에 미치는 냉각속도의 영향)

  • 남춘우;김향숙
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.776-782
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    • 2002
  • The microstructure, V-Ι characteristics, and stability of ZnO-P $r_{6}$ $O_{11}$ CoO-C $r_2$ $O_3$- $Y_2$ $O_3$-based varistor ceramics were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, the varistor voltage, and the leakage current in the V-Ι characteristics. But the nonlinear exponent relatively strongly affected by cooling rate. The cooling rate also greatly affected the stability of V-Ιand dielectric characteristics for DC accelerated aging stress. On the whole, the varistors cooled with 4$^{\circ}C$/fin exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage( $V_{1㎃}$), the nonlinear exponent($\alpha$), and the dissipation factor(tan $\delta$) is -1.4%, -4.9%, and +60.0%, respectively, under DC accelerated aging stress such as 0.95 $V_{1㎃}$15$0^{\circ}C$/12 h)

Electrical Properties and Dielectric Characteristics CCT-doped Zn/Pr-based Varistors with Sintering Temperature

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.3
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    • pp.80-84
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    • 2009
  • The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

Varistor Properties of ZPCCT-based Ceramics (ZPCCT계 세라믹스의 바리스터 특성)

  • Park, Jong-Ah;Kim, Myung-Jun;Ryu, Jung-Sun;Nahm, Choon-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.344-347
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    • 2003
  • The varistor properties of the ZPCCT-based ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ content in the range of $0.0{\sim}1.0\;mol%$. As $Tb_4O_7$ content is increased, the ZPCCT-based ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.84\;g/cm^3$. The varitor voltage($V_{1mA}$) and nonlinear exponent($\alpha$) was increased in the range of 280.9 to 751.8 and 29.8 to 44.4 with increasing $Tb_4O_7$ content, respectively. In particular, the maximum $\alpha$ of 44.4 was obtained from 1.0 mol% $Tb_4O_7$ and the, minimum leakage current($I_{\ell}$) of $1.0\;{\mu}A$ was obtained from 0.5 mol% $Tb_4O_7$.

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Microstructure and Varistor Characteristics of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3-Based Varistors (ZnO-Pr6O11-CoO-Cr2O3-Dy2O3계 세라믹스의 미세구조 및 바리스터 특성)

  • 남춘우;박종아;김명준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.897-901
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    • 2003
  • The microstructure and varistor characteristics of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$(ZPCCD)-based ceramics were investigated with Dy$_2$O$_3$ content in the range of 0.0∼2.0 mol%. As Dy$_2$O$_3$ content is increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu$m and the density was decreased in the range of 5.53∼4.34 g/cm$^3$. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5-66.6 with increasing Dy$_2$O$_3$ content. The addition of Dy$_2$O$_3$ highly enhanced the nonlinear properties of varistors, compared with the ceramics without Dy$_2$O$_3$ Particularly, the ceramics with Dy$_2$O$_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu$A.A.A.

Electrical Properties of $Pr_{6}O_{11}$-Based ZnO Varistors with CoO Content (CoO 첨가량에 따른 $Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 특성)

  • 김향숙;류정선;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.419-422
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    • 2001
  • The electrical properties of Pr$_{6}$O$_{11}$-based ZnO varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$- based ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. As CoO content is increased, the average grain size and the density were increased in the range of 9.86~27.22 $\mu$m and in the range of 5.25-5.55 g/cm$^3$, respectively. The varistor voltage was decreased in the range of 235.32~86.01 V/mm due to the increase of average grain size with CoO content. The varistors doped with CoO in the rage of 1.0~2.0 mol% exhibited a high nonlinearity, in which is above 55 in the nonlinear exponent and below 1.5 $\mu$A in the leakage current. Increasing CoO content further greatly decreased the nonlinearity.ity.ity.

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Effect of Sintering Temperature on Electrical and Dielectric Behavior of Pr6O1-Based ZnO Varistors with DC Accelerated Aging Stress (Pr6O1계 ZnO 바리스터의 DC 가속열화 스트레스에 따른 전기적, 유전적 거동에 미치는 소결온도의 영향)

  • 남춘우;정영철;김향숙
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.244-252
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    • 2002
  • The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ Based Ceramics Varistors with High Stability under d.c. stress (d.c. 스트레스에 높은 안정성을 갖는 ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$계 세라믹 바리스터)

  • Park, Choon-Hyun;Yoon, Han-Soo;Nahm, Choon-Woo
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.1003-1007
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    • 1999
  • This paper is reported for the stability of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based ceramic varistors with $Er_{2}O_{3}$ added in the addition range 0.0 to 2.0 mol%. The varistors sintered at $130^{\circ}C$ exhibited abrupt positive current creep phenomena, which accompany thermal run away within short times, even under weak d.c. stress. As a result, these varistors were completely degraded. On the contrary, the stability of varistors sintered at $1350^{\circ}C$ was far better than that of $1300^{\circ}C$. In particular, the varistor containing 0.5 mol% $Er_{2}O_{3}$ showed a excellent stability, which the variation rate of the varistor voltage, the nonlinear coefficient, and leakage current is below 1%, 2%, and 3.5%, respectively, even under more severe d.c. stress, such as ($0.8V_{1mA}/90^{\circ}C/12h$) + ($0.85V_{1mA}/115^{\circ}C/12h$) + ($0.9V_{1mA}/120^{\circ}C/12h$) + ($0.9V_{1mA}/150^{\circ}C/12h$). Consequently, it is estimated that the basic composition of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based varistor contain 0.5 mol% $Er_{2}O_{3}$ will be used to the fabrication of the varistors for high performance and stability in a forthcoming.

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