• Applied Microscopy
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• v.45 no.2
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• pp.95-100
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• 2015

The in-situ heating transmission electron microscopy experiment allows us to observe the time- and temperature-dependent dynamic processes in nanoscale materials by examining the same specimen. The temperature, which is a major experimental parameter, must be measured accurately during in-situ heating experiments. Therefore, calibrating the thermocouple readout of the heating holder prior to the experiment is essential. The calibration can be performed using reference materials whose phase-transformation (melting, oxidation, reduction, etc.) temperatures are well-established. In this study, the calibration experiment was performed with four reference materials, i.e., pure Sn, Al-95 wt%Zn eutectic alloy, NiO/carbon nanotube composite, and pure Al, and the calibration curve and formula were obtained. The thermocouple readout of the holder used in this study provided a reliable temperature value with a relative error of <4%.

• Analytical Science and Technology
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• v.13 no.3
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• pp.297-303
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• 2000

Isotope-dilution inductively coupled plasma mass spectrometry was used to determine trace amounts of Cd, Cu, Pb, Ni and Zn in sediment. Sediment samples were dissolved by microwave digestion with addition of mixed acid ($HNO_3$, HF and $HClO_4$). Lead was determined after separation of alkaline and alkaline earth metals by an ammonium pyrrolidenedithiocarbarmate (APDC) solvent extraction. The other elements were determined after separation of iron, tin and titanium by hydroxide precipitation. Recovery efficiency of the analyte elements was not satisfactory, but most of matrix elements causing the isobaric interference could be effectively eliminated by the separation. Good agreement was achieved with the certified values in the analysis of the two sediment reference materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• Journal of KIISE:Software and Applications
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• v.28 no.3
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• pp.224-238
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• 2001

본 논문은 ATM(Abstract Timed Machine)으로 명세된 실시간 시스템을 검증하기 위한 방법을 기술한다. ATM은 임무 위급 시스템인 실시간 시스템을 명세, 분석, 검증하기 위한 정형기법이다. ATM은 모드와 전이, 포트로 구성되어 있으며 모드는 머신의 압축된 상태를 표현한다. 전이는 하나의 모드에서 다른 모드로의 전환을 나타내며 조건과 이벤트로 구성되어 있다. 포트는 ATM간의 상호작용을 위한 진입을 표현한다. 다른 정형기법과 비교하여 ATM은 소프트웨어의 순환공학 과정에서 사용하기 위해 설계되었다. 역공학 측면에서 볼 때 ATM은 계산 논리뿐만 아니라 실시간 시스템의 실제 소스코드에 있는 설계나 환경정보를 표현할 수 있다. 이러한 목적을 위해 ATM의 모드는 계산모드, 추상화 모드, 주제모드로 구분된다. 계산 모드는 코드 상에서의 논리와 계산을 나타내며 추상화 모드는 모드와 전이의 블록을 하나의 ATM으로써 표현한다. 대개의 경우, 이것은 코드 상에서의 블록을 ATM내 하나의 모드로 나타낼 때 사용한다. 주제 모드는 예외나 주기적 동작 등과 같은 다수의 ATM의 주제를 표현한다. 실시간 시스템을 검증하기 위해 시스템의 소스 코드는 역명세 과정을 통하여 ATM으로 표현된다. 검증은 ATM에 대한 도달성 그래프를 생성하는 것에 의해 수행된다. 도달성 그래프는 상태와 시간을 추상화되고 압축된 형태로 표현할 수 있으며 그 결과 시간 속성을 지닌 상태 공간을 감소시킬 수 있다. 또한 시스템의 교착상태를 쉽게 발견할 수 있다. 본 논문은 ATM과 실행 모델, 도달성 그래프, 검증을 위한 속성 등을 기술하며 이들을 다른 정형 방법들과 예제를 통하여 비교한다.수 있다. 모피우스는 헤더나 광고와 같은 불필요한 정보들을 제거하는 별도의 단계를 거치지 않으므로 wrapper를 빠르게 생성한다. 궁극적으로 모피우스는 새로운 웹 상점을 사용자가 자유롭게 추가, 삭제할 수 있는 환경을 제공한다.X>와 반응시킬 경우에는 반응식 c에 의거 진행됨을 예측할 수 있었다.의거 진행됨을 예측할 수 있었다.이 거의 산화되지 않았고, $700^{\circ}C$에서도 ZnS와 ZnO 상이 공존한 것으로 보아 SnO$_2$코팅이 ZnS의 산화를 억제하는 것으로 나타났다.pplied not only to the strike system in the RSC circle, but also to the logistics system in the SLC circle. Thus, the RSLC model can maximize combat synergy effects by integrating the RSC and the SLC. With a similar logic, this paper develops "A Revised System of Systems with Logistics (RSSL)" which combines "A New system of Systems" and logistics. These tow models proposed here help explain several issues such as logistics environment in future warfare, MOE(Measure of Effectiveness( on logistics performance, and COA(Course of Actions)

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Journal of the Korean Society for Heat Treatment
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• v.30 no.3
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• pp.113-116
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• 2017

100 nm thick Sn doped ZnO (ZTO) single layer, 15 nm thick Ag buffered ZTO (ZTO/Ag), Ag intermediated ZTO (ZTO/Ag/ZTO) and Ag capped ZTO (Ag/ZTO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering and then the influence of the Ag thin film on the optical and electrical properties of ZTO films were investigated. As deposited ZTO thin films show the visible transmittance of 81.8%, while ZTO/Ag/ZTO trilayer films show a higher visible transmittance of 82.5% in this study. From the observed results, it can be concluded that the 15 nm thick Ag interlayer enhances the opto-electrical performance of ZTO thin films effectively for use as flexible transparent conducting oxides films in various opto-electrical applications.

• Clean Technology
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• v.19 no.4
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• pp.416-422
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• 2013

In environmental friendly aspects, the synthesis of glycerol carbonate from glycerol using carbon monoxide and oxygen gases which were produced in petrochemical plants was studied. The oxidative carbonylation of glycerol under batch reaction system was performed on parameter conditions such as effect of various metals (Cu, Pd, Fe, Sn, Zn, Cr), oxidizing agents, mole ratio of carbon monoxide to oxygen, catalyst amount, solvent types, reaction temperature and time and dehydrating agents. In particular copper chloride catalysts showed the excellent activities, and the glycerol carbonate yields over CuCl and $CuCl_2$ catalysts were the maximum of 44% and 64%, respectively at the following reaction conditions: solvent as nitrobenzene, mole ratio of 1:3:0.15 (glycerol:carbon monoxide:catalyst), mole ratio of 2:1 (carbon monoxide:oxygen), the total pressure of 30 bar at 413 K for 4 hr. It was found that reactivity were significantly different depending on the oxidation number of Cu catalysts, and oxygen plays an important role as oxidizing agents in producing H2O during oxidation reaction after carbonylation of glycerol.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Economic and Environmental Geology
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• v.56 no.6
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• pp.745-764
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• 2023

In the Republic of Congo, Banded iron formations (BIFs) occur in two areas: the Chaillu Massif and the Ivindo Basement Complex, which are segments of the Archean Congo craton outcropping in the northwestern and southwestern parts of the country. They show interesting potential with significant mineral resources reaching 2 Bt and grades up to 60% Fe. BIFs consist mostly of oxide-rich facies (hematite/magnetite), but carbonate-rich facies are also highlighted. They are found across the country within the similar geological sequences composed of amphibolites, gneisses and greenschists. The Post-Archean Australian Shale (PAAS)-normalized patterns of BIFs show enrichment in elements such as SiO₂, Fe₂O₃, CaO, P₂O₅, Cr, Cu, Zn, Nb, Hf, U and depletion in TiO₂, Al₂O₃, MgO, Na₂O, K₂O, Sc, Th, Ba, Zr, Rb, Ni, V. REE diagrams show slight light REEs (rare earth elements; LREEs) compared to heavy REEs (HREEs), and positive La and Eu anomalies. The lithological associations, as well as the very high (Eu/Eu^*)_SN ratios> 1.8 shown by the BIFs, suggest that they are related to Algoma-type BIFs. The positive correlations between Zr and TiO₂, Al₂O₃, Hf suggest that the contamination comes mainly from felsic rocks, while the absence of correlations between MgO and Cr, Ni argues for negligeable contributions from mafic sources. Pr/Pr^* vs. Ce/Ce^* diagram indicates that the Congolese BIFs were formed in basins with redox heterogeneity, which varies from suboxic to anoxic and from oxic to anoxic conditions. They were formed through hydrothermal vents in the seawater, with relatively low proportions of detrital inputs derived from igneous sources through continental weathering. Some Congolese BIFs show high contents in Cr, Ni and Cu, which suggest that iron (Fe) and silicon (Si) have been leached through hydrothermal processes associated with submarine volcanism. We discussed their tectonic setting and depositional environment and proposed that they were deposited in extensional back-arc basins, which also recorded hydrothermal vent fluids.