• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.17-22
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• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.157-160
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• 2001

Three sets of ZnO ceramic devices (reference samples with Matsuoka\`s composition; added 7o MgO, A1$_2$O$_3$, SiO$_2$) have been prepared by the conventional mixed oxide route. These additives were determined by the factors of valences and ionic radiuses. DC accelerated degradation test was performed for analysis of degradation characteristics versus the various additives. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the Phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine ${\alpha}$. Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.324-326
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• 1997

Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1884-1886
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• 2005

KrF 펄스 레이저 증착법(pulsed laser deposition: PLD)으로 ZnO 박막을 증착하여 평판 디스플레이 소자 구동용 박막 트랜지스터(thin film transistor) 소자를 제작하였다. 전도성이 높은 실리콘웨이퍼(c-Si, 하부전극) 기판 위에 LPCVD 법으로 silicon nitride 박막을 절연막으로 형성하고, 다양한 공정 조건에서 펄스 레이저 증착법으로 제작한 ZnO 박막을 증착하여 채널층으로 하였으며, Al 박막을 증착하고 패터닝하여 소스 및 드레인 전극으로 하였다. ZnO 박막의 증착 시에 기판 온도를 다양하게 조절하고 산소 분압을 변화시켜 ZnO 박막의 특성을 조절하였다. 제작된 박막의 표면특성은 AFM(atomic force microscopy)로 분석하고, 결정특성은 XRD(X-ray diffraction)로 조사하였다. ZnO 박막의 전기적 특성은 Hall-van der Pauw 법으로 측정하였고, 광학 투과도(optical transparency)를 UV-visible photometer로 조사하였다. ZnO-TFT 소자는 $10^6$ 수준의 on-off ratio와 $2.4{\sim}6.1cm^2/V{\cdot}s$의 전계효과이동도(field effect mobility)를 보였다.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1127-1131
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• 2003

Phosphate glasses known for low melting temperature glasses in electrical parts has been recently used in wide area with modification of thermal properties using alkali oxides. It is our purpose to find a correlation between thermal expansion coefficient, glass transition temperature and melting temperature through investigating thermal properties in P$_2$O$\sub$5/-SnO-ZnO-SiO$_2$/B$_2$O$_3$. As a result, the product of thermal expansion coefficient and the glass transition temperature in the glasses is found to be a constant value would be a unique value for knowing one of thermal properties.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.3-10
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• 1985

In the study the characteristics change of crystallized $Li_2O$.$Al_2O_3$.$SiO_2$ glass-ceramics when varying RO ratio and increasing Al2O3 were investigated to produce a glass-ceramics with high mechanical strength and low thermal expansion. Parent glass was obtained by melting at 1,350~1,40$0^{\circ}C$ for 3 hours and annealing at 45$0^{\circ}C$ and the various physical characteristics were measured. Results were as follows; 1. When ZnO was replaced by MgO thermal expansion coefficient was lowered when increasing ZnO content. 2. Major crystal phase was $\beta$-spodumene the crystal growth mophology was the three dimensional sphere and the activation energy for crystallization was 54.6 Kcal/mol. 3. Parent glass heat-treated at 95$0^{\circ}C$ for 10 hours had ; a) thermal expansion coeff. of $23.2{\times}10^{-7}$/$^{\circ}C$ b)whiteness of 76 c) microhardness of 1,089kg/$mm^2$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.95-98
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• 2002

전력선 통신 blocking filter용 자심 재료를 개발하기 위해서 MnO 24 mol%, ZnO 25 mol% and $Fe_{2}O_{3}$ 51 mol% 의 기본조성에 $MoO_{3}$, $SiO_{2}$, CaO를 첨가하여 $1350^{\circ}C$에서 대기압 상수 A를 7.8롤 고정하고 소결하여 미세구조를 제어하였으며 기본 조성에 $MoO_{3}$ 400 ppm, $SiO_{2}$ 100 ppm and CaO 200 ppm을 첨가한 경우 평균 입경 $25{\mu}m$ 의 균일한 결정립으로 구성된 미세구조를 얻었고 기공의 감소에 의한 치밀화로 $4.98g/cm^{2}$의 고밀도화가 이루어 졌다. 또한 소결체의 균일한 미세구조와 고밀도화로 인해서 8221(${25^{\circ}C}$, 1 KHz) 의 가장 높은 투자율 특성을 나타냈다. 시편의 온도가 증가함에 따라 투자율이 증가되어 ${110^{\circ}C}$에서 13904의 거대 투자융이 측정되었고, 코일의 인가주파수가 1 KHz에서 1 MHz까지 증가됨에 따라 최고 ${102^{\circ}C}$까지 시편 온도가 상승하였다. 가장 높은 투자율 특성을 나타낸 ferrite 코어를 사용하여 단상 및 3상용 블로킹 필터의 감쇄율을 측정한 결과 현재 국내의 전력선 통신용 주파수 대역으로 규정되어 있는 10 KHz ~ 450 KHz 대역에서 각각 -46.46 dB와 -73.9 dB의 최고 값을 얻었다.

• The Journal of the Petrological Society of Korea
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• v.27 no.1
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• pp.37-47
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• 2018

Volcanic ash samples of historical eruptions from Mt. Baekdu were analyzed for major oxides, trace and rare earth elements by a variety of analytical techniques. The results indicate that the ashes consist of approximately 58.8~71.1 wt.% $SiO_2$, 9.6~16.8 wt.% $Al_2O_3$, 4.5~6.9 wt.% $Fe_2O_{3t}$, 0.1~1.7 wt.% MgO, 0.3~1.6 wt.% CaO, 5.2~6.3 wt.% $Na_2O$, 4.3~5.9 wt.% $K_2O$ and less than 1.2 wt.% $TiO_2$. Thirty two trace metals including Ba, Cu, Cr. Co, Ni, Sr, V, Zn, and Zr were analyzed. The ashes can be divided two groups: group A(1 ka Millennium pumice, 1668 and $190{\underline{3}}$ pumice) and group B(1702 pumice) according to the relative enrichment of HREEs. The abundances of heavy metals such as Cu, Co, Mn, and Zn were relatively low. As compared to the Sakurajima volcanic ash, Baekdusan volcanic ash has low concentrations of Y, Nb, Pb, U, Sc, V, Ni and Cu and high concentrations of Zr, Ba, Hf, Cr, Co, Zn and rare-earth (except Eu).