• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.301-304
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• 2014

The effect of oxygen pressure on the synthesis of ZnO nanowires by means of melt-oxidation of an Al-Zn mixture was investigated. The samples were prepared in oxygen ambient for 1 h at $1,000^{\circ}C$ under oxygen pressure ranging from 0.5 to 100 Torr. ZnO nanowires were formed at oxygen pressures lower than 10 Torr. As the oxygen pressure increased from 0.5 to 10 Torr, the width of the nanowires increased, but their length decreased. The ZnO nanowires had a needle shape, which became gradually thinner toward the tip. X-ray diffraction patterns showed that the nanowires had a hexagonal wurtzite structure. However, ZnO nanowires were not observed when the oxygen pressure increased from 10 Torr to 100 Torr. In roomtemperature cathodeluminescence spectra of the ZnO nanowires, the intensity of ultra-violet emission at 380 nm increased with decreasing oxygen pressure, which indicated that the lower the oxygen pressure, the better the crystallinity of the ZnO nanowires.

• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.213-219
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• 2009

Optimum conditions for production of semi-solid Al-Zn-Mg alloy billets was carried out by the Taguchi design method. And, Al-Zn-Mg alloy billets contained Sc (free, 0.1 and 0.3 mass %) were fabricated at optimum conditions. Evolution of microstructure in semi-solid state was investigated through various liquid fractions, holding times and holding temperatures. The Al-Zn-Mg alloy billets reheated at $615^{\circ}C$ during 30min are grain growth and it was fractured due to increasing liquid fraction before quenching. And, during reheating up to $600^{\circ}C$, grain growth of Al-Zn-Mg alloy billets contained Sc (0.1 and 0.3 mass %) was not occurred in comparison with those of Al-Zn-Mg alloy without Sc. It was thought that $Al_3Sc$ phases have a pinning effect in grain boundary and Sc content of 0.1 mass% is able to inhibit grain growth effectively through reheating process.

• Journal of Korea Foundry Society
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• v.22 no.2
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• pp.82-88
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• 2002

Al-5.5Zn-2.5Mg-l.5Cu semi-solid slurry was prepared by cooling the liquid metal with a low superheat to a solid and liquid co-existing temperature. Relatively round solid particles could be obtained in the slurry through the simple process. The prepared slurry was deformed into the metallic mold by a press and the mechanical properties of obtained specimens were investigated. Mold filling ability of the alloy slurry was also investigated and compared with that of A356 alloy. Al-Zn-Mg-Cu alloy showed lower mold filling ability than A356 alloy probably because small amount of eutectic phase is present and the heat of fusion generated during solidification is smaller than that of A356 alloy.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.95-95
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• 2009

Zinc coatings provide the most effective and economical way of protecting steel against corrosion. There are three types of galvanizing lines typically used in production line in galvanizing industries,Galvanize (GI) coating (Zn-0.1-0.3%Al), Galfan coating (Zn-5%Al), Galvalume(GL) coating (45%Zn-Al). In continuous Galvanizing lines, the immersed bath hardware (e.g. bearings, sink, stabilizer, and corrector rolls, and also support roll arms and snout tip) are subjected to corrosion and wear failure. Understanding the reaction of these materials with the molten Zn alloy is becomes scientific and commercial interest. To investigate the reaction with molten Zn alloys, static immersion test performed for 4, 8, 16, and 24 Hr. Two different baths used for the static immersion, which are molten Zn and molten Zn-55%Al. Microstructures characterization of each of the materials and intermetallic layer formed in the reaction zone was performed using optical microscope, SEM and EDS. The thickness of the reaction layer is examined using image analysis to determine the kinetics of the reaction. The phase dominated by two distinct phase which are eutectic carbide and matrix. The morphology of the intermetallic phase formed by molten Zn is discrete phase showing high dissolution of the material, and the intermetallic phase formed by Zn-55wt%Al is continuous. Aluminum reacts readily with the materials compare to Zinc, forming iron aluminide intermetallic layer ($Fe_2Al_5$) at the interface and leaving zinc behind.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.256-262
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• 2008

$ZnAl_{1-x}\;Cr_xO_4$ solid solutions were synthesized as pink pigments with and without mineralizer. The pigments were examined to optimize color development conditions of temperature and $Cr_2O_3$ contents. The characteristics of synthesized pigments were analyzed by XRD, XPS, FT-IR and UV-vis spectrophotometer. While samples without mineralizer fired at $1300^{\circ}C$, showed $ZnAl_2O_4$ and $ZnCr_2O_4$ spinel in XRD analysis. While samples with mineralizer resulted in $ZnAl_2O_4$. As a results, the pigments show pink color and most effective pink color was obtained at X=0.15 and $1250^{\circ}C$ when mineralizer was used. The chromatic coordinates are $L^*$ 58.61 $a^*$ 24.48, and $b^*$ 9.60.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.17-20
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• 1994

Electrical Chracteristics of ZnO doped with Al$_2$O$_3$were investigated using complexe impedence measurements. The electrical conductivity of ZnO samples increased whithin 0.5mol% of Al$_2$O$_3$ doping, but decreased abode 0.5mol%. The increase and decrease of electrical conductivity seem to be the effect of Al$_2$O$_3$ doner doping and increasement of the number of grain boundary ZnO, respectively.

• Journal of the Korean institute of surface engineering
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• v.20 no.3
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• pp.118-126
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• 1987

The Zn-Al composite electroplating was studied by using chloride zinc bath containing metal hydroxides $(Zn(OH)_2,\;Al(OH)_3))$ and aluminium powder. The size of Al powder codeposited in the beaker bath with Al powder of-400 mesh was under 10${\mu}m$. The Zn-Al composite was electro-deposited at 40$^{\circ}C$ in the ranges of current density of 5-50 A/$dm^2$ in the flowing electrolyte. The content of aluminium particles codeposited increased slightly with increasing flow rate of electrolyte from 0.5 m/sec to 1.0 m/sec, and decreased with increasing current density from 5 A/$dm^2$ to 50 A/$dm^2$. The content of aluminium particles codeposited by using the electrolyte containing zinc hydroxide(0.1M) was 2~4 wt%. The Al powder was codeposited mainly near the surface layer of the electrodeposits. The dissolution rate of aluminium particles in the electrolyte containing 0.1M $Zn(OH)_2$ and Boric acid was 0.41 g/l. day in comparison with 1.5 g/l. day dissolution rate in pure chloride bath.