• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.23-29
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• 2016

Zinc oxide of hexagonal wurzite, is known as n-type semiconductor. It has a wide band gap energy of 3.37 eV and large exciton binding energy of 60 meV. It can be widely applied to gas sensors, laser diodes, dye-sensitized solar cells and degradation of dye waste. The use of microwave hydrothermal synthesis brings a rapid reaction rate, high yield, and energy saving. Amine additives control the different particle shapes because of the chelate effect and formation of hydroxide ion. In this study, zinc nitrate hexahydrate was used as zinc precursor. In addition, ethanolamine, ethylenediamine, diethylenetriamine, and hexamethylenetetramine are used as shape control agent. The pH value was controlled as 11 by NaOH. The shapes of zinc oxide are star-like, rod, flower-like, and circular cone. In order to analyze physical, chemical, and optical properties of ZnO with diverse amine additives, we used XRD, SEM, EDS, FT-IR, UV-Vis spectroscopy, and PL spectroscopy.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1181-1182
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• 2006

Y-type barium ferrite $(Ba_2Zn_2Fe_{12}O_{22})$ was prepared by the glass-ceramic method. Glasses with composition of $0.1ZnO{\cdot}0.9(0.3Fe_2O_3{\cdot}0.5BaO{\cdot}0.2B_2O_3)$ were prepared, and the precipitation behavior of Y-type ferrite from the glass matrix was investigated by heating glass specimens at various temperature. $\alpha-BaFe_2O_4$ which is a precursor of M-type ferrite $(BaFe_{12}O_{19})$ was precipitated at about 813 K and an unknown compound, phase X, was precipitated at about 850 K. M-type ferrite and Y-type ferrite started to form at about 923 K and 1103 K, respectively. The formation of Y-type ferrite was int erpreted as the result of the reaction of M-type ferrite with a melt of phase X.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.137-141
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• 2009

AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.

• Advances in nano research
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• v.12 no.4
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• pp.415-426
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• 2022

Nickel substituted cobalt-zinc ferrite nanoparticles with composition Co_0.5Zn_0.5Ni_xFe_2-xO₄ (x = 0.25, 0.5, 0.75, 1.0) were synthesized using a wet chemical method named citrate precursor method. Various characterizations of the prepared nanoferrites were done using X-ray powder diffractometry (XRD), Scanning electron microscopy (SEM), UV visible spectroscopy and Fourier transform spectroscopy technique (FT-IR). XRD confirmed the formation of cubic spinel structure of the samples with single phase having one characteristic peak at (311). The value of optical band gap (E_g) was found to decrease with Ni substitution and have values in the range 2.30eV to 1.69eV. A Fenton-type system was created by photocatalytic activity using source of visible light for removal of methylene blue dye. Observations revealed increase in the degradation of methylene blue dye with increasing nickel content in the samples. The degradation percentage was increased from 77.32% for x = 0.25 to 90.16% for x = 1.0 in one hour under the irradiation of visible light. Also, the degradation process was found to have pseudo first order kinetics model. Hence, it can be observed that synthesized nickel doped cobalt-zinc ferrites have good capability for water purification and its degradation efficiency enhanced with increase in nickel concentration.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.538-543
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• 2008

Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.152-156
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• 2016

Experimental research on the preparation of photocatalyst for the decomposition of brilliant blue FCF ($C_{37}H_{31}O_9N_2S_3Na_2$) was performed. $TiO_2$ and ZnO powders were prepared from titanium (IV) sulfate and zinc acetate at low reaction temperature and atmospheric pressure by hydrothermal precipitation method without calcination. In addition, $TiO_2$ was prepared with cationic surfactant CTAB (Hexadecyltrimethyl ammonium bromide) at the same conditions. The physical properties of prepared $TiO_2$ and ZnO, such as crystallinity, average particle size and absorbance, were investigated by XRD, Zeta-potential meter and DRS. And, the photocatalytic degradation of brilliant blue FCF has been studied in the batch reactor under UV radiation. For the photocatalysts prepared without CTAB, $TiO_2$ has smaller particle size and larger absorbance and photocatalytic reaction rate than ZnO. And $TiO_2$, prepared with CTAB whose concentration is 1/10 of that of precursor, shows 15% higher than that prepared without CTAB in final photocatalytic degradation ratio of brilliant blue FCF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.22-22
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• 2009

최근 산화물 반도체와 나노소자 대한 관심이 날로 높아지고 있는 가운데 산화아연(ZnO) 나노구조를 이용한 나노소자 제작이 많이 연구되고 있다. 산화아연은 c축으로 우선 배향성을 가지는 우르짜이트 구조로써, 나노선 성장이 다른 산화물에 비해 용이하고 그 물리적, 화학적 특성이 안정 무수하다. 이러한 산화아연 나노선 제작법 가운데, 유기금속화학기상증착법은 다른 성장법에 비해 결정학적 광학적 특성이 우수하고 성장속도가 빨라 고품질 나노선 성장에 용이한 장비로 각광받고 있다. 하지만 bottom-up 공정을 기반으로 한 나노소자제작에서 몇 가지 문제점을 가지고 있다. 1) 수직형 대면적 성장, 2) 나노선 밀도 조절의 어려움, 3) 기판과의 계면층에 자발적으로 생성되는 계면층의 제거, 4) 고온성장시 precursor의 증발 문제 등이 그것이다. 본인은 이러한 문제점을 해결하기 위해 산화아연 나노구조 성장 시, 마그네슘(Mg)을 도입하여, 각 원소의 함량 분포 정도에 따라 기판 표면에 30nm 두께 미만의 상분리층(단결정+비정질층)을 자발적으로 형성시켰다. 성장이 진행됨에 따라, 아연이 rich한 단결정 층에서는 나노선이 선택적으로 성장하게 하였고, 마그네슘이 rich한 비정질 층에서는 성장이 이루어지지 않게 하였다. 따라서 산화아연이 증발되는 온도영역에서 10nm 이하 직경을 가지는 나노선을 자발적으로 계면층 없이 수직 성장하였다. 또한, 표면의 단결정, 비정질의 사이즈를 Mg 함량으로 적절히 조절한 결과, 산화아연계 나노월 구조성장이 가능하였다.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of Information Display
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• v.11 no.3
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• pp.113-118
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• 2010

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.