• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.648-650
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• 2009

We investigate nematic liquid crystal (NLC) alignment on ion-beam exposed ZnO films. ZnO is optically transparent material in the visible range. We optimized the deposition parameters such as deposition temperature and gas ratio for high transmittance and resistivity. Using ion-beam treated ZnO films, LC cells are fabricated and the conditions such as exposure energy and time for uniform alignment are found. The NLC molecules align parallel to the ion-beam exposure direction. The electro-optic and response characteristics show the possibility of application of this method in liquid crystal display.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.253-257
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• 2008

To enhance the luminescence properties, the red phosphor composed of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ as doping concentration of Zn ion is synthesized at $1200^{\circ}C$ for 6 hrs in air atmosphere by conventional solid reaction method. As a result of the red phosphor $(Y,\;Zn)_2O_3$:$Eu^{3+}$ is measured X-ray diffraction (XRD), The main peak is nearly corresponded to the same as JCPDS card (No. 41-1105). When the doping concentration of Zn ion is more than 5 mol%, However, the ZnO peak is showed by XRD analysis. Therefore, when the doping concentration of Zn ion is less than 5 mol%, the Zn ion is well mixed in $Y_2O_3$ structure without the impurity phases. The photoluminescence (PL) properties is shown as this phosphor is excited in 254 nm region and the highest emission spectra of $(Y,\;Zn)_2O_3$:$Eu^{3+}$ has shown in 612 nm region because of a typical energy transition ($^5D_0{\rightarrow}^7F_2$) of $Eu^{3+}$ ion. As the doping concentration of Zn ion is more than 10 mol%, the emission peak is suddenly decreased. when the highest emission peak as doping concentration of Zn ion is shown, the composition of this phosphor is $(Y_{0.95},\;Zn_{0.05})_2O_3$:$Eu^{3+}_{0.075}$ and the particle size analyzed by FE-SEM is confirmed from 0.4 to $3{\mu}m$.

• Journal of Electrochemical Science and Technology
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• v.14 no.2
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• pp.162-173
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• 2023

Aqueous zinc-ion batteries are considered as promising alternatives to lithium-ion batteries for energy storage owing to their safety and cost efficiency. However, their lifespan is limited by the irreversibility of Zn anodes because of Zn dendrite growth and side reactions such as the hydrogen evolution reaction and corrosion during cycling. Herein, we present a strategy to restrict direct contact between the Zn anode and aqueous electrolyte by fabricating a protective layer on the surface of Zn foil via phosphidation method. The Zn₃(PO₄)₂ protective layer effectively suppresses Zn dendrite growth and side reactions in aqueous electrolytes. The electrochemical properties of the Zn₃(PO₄)₂@Zn anode, such as the overpotential, linear polarization resistance, and hydrogen generation reaction, indicate that the protective layer can suppress interfacial corrosion and improve the electrochemical stability compared to that of bare Zn by preventing direct contact between the electrolyte and the active sites of Zn. Remarkably, MnO₂ Zn₃(PO₄)₂@Zn exhibited enhanced reversibility owing to the formation a stable porous layer, which effectively inhibited vertical dendrite growth by inducing the uniform plating of Zn²⁺ ions underneath the formed layer.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.977-982
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• 2011

Migration and interaction of multi-protons in a zinc-doped barium zirconate (Zn-doped $BaZrO_3$) super cell were investigated using a density functional theory. O ions in the super cell form interconnected octahedrons with Zr or Zn ions positioned in their centers and Ba ions positioned among the eight octahedrons. When one proton was added to the super cell, the energy barrier of 0.80 eV for proton transfer from the first to second nearest O ion sites from the Zn ion reached its highest value. When two protons were added to the super cell, the two protons preferred the first nearest O ions from the Zn ion. The two protons were accommodated by pushing the neighboring Zn ion further away from the center of the octahedron. Energy barriers for proton transfer from the Zn-octahedron to the neighboring Zr-octahedron were spread in the range of 0.36 ~ 1.02 eV.

• Journal of the Korean institute of surface engineering
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• v.19 no.4
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• pp.133-139
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• 1986

The effects of alternating voltage, $Cl^-$ ion and pH on the corrosion of Zn and Zn-Fe alloys have been investigated by using electrochemical techniques in $Ca(OH)_2$ solutions. The passive film $Zn(OH)_2$ was initially formed on the Zn surface and gradually transformed to $Ca(Zn(OH)_3)_2{\cdot}2H_2O$, which was identified with the X-ray diffraction method, SEM micrograph and EPMA. The passivity current increased with increasing alternating voltage and decrease AC frequency. ${\xi}$ phase in Zn-Fe alloys reduced the effects of AC. The effect of $Cl^-$ ion on the passivity current of Zn was similar to the AC effect, resulting in pits on Zn. It was also found that the passive region of Zn decreased rapidly below pH 10.3 of the solution.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1626-1631
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• 2010

The characteristics of electric current for the voltaic cell are important for electric power applications. In this paper, an electrical equivalent model consist of three resisters and a capacitance for the Cu/NaCl solution/Zn electrochemical cell is proposed. The capacitance which exists in the Zn electrode/electrolytic interface increased according to Zn electrode area, but cannot affect almost in electric current. Complex impedance plot was used to analysis the interface effect for Zn/electrolyte. This result shows that the interface is similar with the electric transmission line. The short current measurements were conducted to investigate the effects of hydrogen peroxide, the watery sulfuric acid and NaCl aqueous solution. As the hydrogen peroxide increased, the electric current increased because the hydrogen gas being converted with the water. Also electric current increased significantly with increase of the hydrogen ion with the watery sulfuric acid and increased with increase of $Na^+$ ion and $Cl^-$ion in the NaCl electrolyte.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Journal of Powder Materials
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• v.28 no.1
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• pp.44-50
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• 2021

Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.