• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.591-596
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• 2013

Indium Zinc Tin Oxide (IZTO) thin films were developed as an alternative to Indium Tin Oxide (ITO) thin films. ITO material which has been acknowledged with its low resistivity and optical transparency of 85-90% has been used as major transparent conducting oxide (TCO) materials. However, due to the limited source, high price, and instability problems at high temperature of indium, many researches has been focused on indium-saving TCO materials. Mason Group of Northwestern University was reported to expand the solubility limit up to 40% by co-doping with 1:1 ratio of $Zn^{+2}$ and $Sn^{+4}$ ions. In this study, the properties of IZTO thin films corresponding to Zn/Sn different ratio were investigated. In addition, the effect of substrate temperature variable to the structural, optical and electrical properties of IZTO thin films was investigated.

• Journal of Magnetics
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• 제10권3호
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• Current Applied Physics
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• 제18권12호
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• pp.1465-1472
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• 2018

The magnetic and optical properties of Ce-doped ZnO systems have been widely demonstrated, but the effects of different strains of Ce-doped ZnO systems remain unclear. To solve these problems, this study identified the effects of biaxial strain on the electronic structure, absorption spectrum, and magnetic properties of Ce-doped ZnO systems by using a generalized gradient approximation + U (GGA + U) method with plane wave pseudopotential. Under unstrained conditions, the formation energy decreased, the system became stable, and the doping process became easy with the increase in the distances between two Ce atoms. The band gap of the systems with different strains became narrower than that of undoped ZnO without strain, and the absorption spectra showed a red shift. The band gap narrowed, and the red shift became weak with the increase of compressive strain. By contrast, the band gap widened, and the red shift became significant with the increase of tensile strain. The red shift was significant when the tensile strain was 3%. The systems with -1%, 0%, and 1% strains were ferromagnetic. For the first time, the magnetic moment of the system with -1% strain was found to be the largest, and the system showed the greatest beneficial value for diluted magnetic semiconductors. The systems with -3%, -2%, 2%, and 3% strains were non-magnetic, and they had no value for diluted magnetic semiconductors. The ferromagnetism of the system with -1% strain was mainly caused by the hybrid coupling of Ce-4f, Ce-5d, and O-2p orbits. This finding was consistent with Zener's Ruderman-Kittel-Kasuya-Yosida theory. The results can serve as a reference for the design and preparation of new diluted magnetic semiconductors and optical functional materials.

• 한국세라믹학회지
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• 제37권5호
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• pp.491-496
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• 2000

Single phae Pb(Mg1/3Nb2/3)O3-based solid solutions, the Mg2+ of which are replaced by 20mol% of Ni2+, Zn2+, Cd2+, and the Pb2+ of which are replaced by 0∼20 mol% of La3+, were synthesized and their ordering structures of B-site cations were investigated by XRD and TEM. The B'-site cations (Mg2+, Ni2+, Zn2+, Cd2+) are disordered while these B'-site cations and the B"-site cations (Nb5+) are nonstoichiometrically 1:1 ordered within the ordered nano-domains dispersed in the Nb5+-rich disordered matrix. The charge imbalance between the B'-rich ordered nano-domains and the B"-rich disordered matrix are compensated by the doping of electron donor such as La3+, which enhances the degree of nonstoichiometric 1:1 ordering. For a given La3+ content, the degree of nonstoichiometric 1:1 ordering increases as the average ionic size difference between the B'-and B"-site cations increases, Ni2+

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.168-168
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• 2012

Al doped ZnO (AZO)는 태양전지, 평판 디스플레이, OELD 등 광전자 소자에 적용되는 투명전도막용 재료인 ITO의 대체 재료로서 최근에 가장 각광받고 있는 물질이다. 하지만, $2.5{\times}10^{-4}{\Omega}{\cdot}cm$의 낮은 비저항과 90% 이상의 투과도를 갖는 ITO의 비해 AZO의 특성은 아직 부족한 상황이다. 수십 년간 많은 연구자들에 의해 다양한 제조 방법과 공정 조건들로 전기적, 광학적 특성을 향상시키기 위한 노력들이 진행되어 왔다. 하지만 실리콘 반도체와는 달리 II-VI족 물질의 정확한 근본적인 원리는 아직 불분명한 상태이다. 지금까지 AZO의 특성 향상의 원인을 결정립 크기, 주상구조의 우선 방위, 결정성, Zn-O 구조내의 산소 결핍 등의 메커니즘으로 설명해 왔다. 하지만, 본 연구에서는 지금까지 제안된 상기 요인의 변화 없이 전기적, 광학적 특성을 향상시키는 것이 짧은 열처리만으로도 가능했다. AZO 박막의 전기적, 광학적 특성에 큰 영향을 미치는 보다 근본적인 원인은 도핑 효율이다. ZnO 내에 도핑된 Al의 양보다 실제로로 활성화된 Al의 비율을 올리는 것이 중요하다. 본 연구에서 구조적, 조성적 변화 없이 도핑효율을 8.9%에서 66.7%까지 증가시켰으며, 이동도는 박막 표면의 및 결정립계 사이의 과잉산소를 줄임으로서 optical phonon scattering 감소를 통하여 증가시킬 수 있고, 이러한 과잉산소의 감소는 deep level emission을 감소시킴으로서 투과도 증가에도 영향을 준다. 본 연구에서 짧은 열처리를 통해 구조적 변화 없이 도핑효율의 증가만으로 $4.8{\times}10^{-4}{\Omega}{\cdot}cm$의 비저항과 90%의 투과도를 갖는 AZO 박막을 제조하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Current Photovoltaic Research
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• 제4권3호
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Advances in environmental research
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• 제3권1호
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• pp.11-28
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• 2014

Advanced oxidation processes using UV and catalysts like $TiO_2$ and ZnO have been recently applied for the photocatalytic degradation of MTBE in water. Attempts have been made to replace the UV radiation by the solar spectrum. This review intends to shed more light on the work that has been done so far in this area of research. The information provided will help in crystallizing the ideas required to shift the trend from UV photocatalysis to sunlight photocatalysis. The careful optimization of the reaction parameters and the type of the dopant employed are greatly responsible for any enhancement in the degradation process. The advantage of shifting from UV photocatalysts to visible light photocatalysts can be observed when catalysts like $TiO_2$ and ZnO are doped with suitable metals. Therefore, it is expected that in the near future, the visible light photocatalysis will be the main technique applied for the remediation of water contaminated with MTBE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.980-983
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• 2003

The preparation of ZnS:Mn,Cl phosphor has been carried out by combustion method. Manganese nitrate was decomposed with an organic fuel at $500^{\circ}C$ to give fine sized crystallites in presence of alkali metal halides at a lower temperature than the conventional synthesis. The phosphors thus obtained were then heated at 900 to $1200^{\circ}C$ in an inert atmosphere, for 3hours to get better luminescent properties. The phosphors were prepared at different temperatures and at different doping concentrations of manganese to determine the optimal conditions for synthesizing the phosphors with superior optical properties. Scanning electron microscopy (SEM) investigations have been carried out to observe the particle morphology and the grain size. Powder X-ray diffraction(XRD) was also performed to characterize the phosphors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.22-22
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• 2010

0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures.