• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.381-386
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• 2011

We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.43-47
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• 2008

[ $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ ] nano-glass has been prepared by sol-gel method. The mean particle size was 60.3 nm with narrow size distribution. The nano-galss has been used as a sintering aid for the densification of the NiZnCu ferrites. The ferrite was sintered with nano-glass sintering aids at $840{\sim}900^{\circ}C$, 2 h and the initial permeability, quality factor, density, and saturation magnetization were also measured. The initial permeability of 0.5 wt% nano-glass added toroidal sample for NiZnCu ferrites sintered at $900^{\circ}C$ was 193.3 at 1 MHz. The initial permeability and saturation magnetization were increased with increasing annealing temperature. As a result, $ZnO-Bi_2O_3-Al_2O_3-B_2O_3-SiO_2$ nano-glass systems were found to be useful as sintering aids for multilayer chip inductors.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.4
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• pp.79-85
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• 2009

This paper describes the degradation properties of ZnO surge arresters impressed by lightning impulse currents. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, the 8/20[${\mu}s$], 2.5[kA] standard lightning impulse currents were injected to the ZnO surge arrester under test. The power frequency AC and DC leakage currents flowing through the ZnO surge arresters with and without the injection of lightning impulse currents were measured. As a result, the leakage currents are increased and the asymmetry of the AC leakage current is pronounced as the number of injection of the impulse current increases. The ZnO grain of the surge arrester without the injection of lightning surges are uniform but the ZnO grain of the ZnO surge arrester with the injection of lightning impulse currents are deformed. Also, it was found that the decrease of the $Bi_2O_3$ due to the lightning impulse current leads to the lack of grain boundary layer and the current concentrated by the lack of grain boundary layer play an important role to degrade nonlinear property of ZnO surge arrester blocks.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2004.12a
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• pp.3-11
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• 2004

The power loss analysis was carried out for Ni-Cu-Zn ferrite samples with different content of NiO and ZnO. The power loss, Pcv decreases monotonically wi increasing temperature and attains to a certain value at around $100\~120$ degrees Celsius. The frequency dependence of Pcv can be explained by $Pcv\~f^n$', and n is independent of the frequency, f up to 1MHz. The Pcv decreases with an increase in ZnO/NiO. The Pcv was separated to hysteresis loss, Ph and residual loss, (Pcv-Ph). The temperature characteristics and compositional dependence of Pcv can be attributed to the Ph, while (Pcv-Ph) is not affected by both temperature and ZnO/NiO. By analyzing temperature and composition dependence of Ph and initial permeability, ${\mu}^i$ following equations could be formularized. $${\mu}_i{\mu}o=I_x\;^2/(K_1+bs_ol_s)\;\;\;\;(1)$$ $Wh=13.5(I_s\;^2/{\mu}_i{\mu}_o)\;\;\;\;(2)$$ Were ${\mu}_o$ is permeability of vacuum, $I_s$ saturation magnetization, $K_1$ anisotropy constant, $S_o$ internal heterogeneous stress, $I_s$, magnetostriction constant, b unknown constant. Wh hysteresis loss per one cycle of excitation (Ph: Wh*f). Steinmetz constant of Ni-Cu-Zn ferrites, $m=1.64\~2.2$ is smaller than the one of Mn-Zn ferrites, which suggests the difference of loss mechanism between these materials.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.965-970
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• 2012

Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.165-172
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• 1997

CRT용 고전압 형광체인 ZnS를 저전압용에 적용하기 위해 ZnS 분말표면에 졸-겔법으로 SnO$_2$코팅조건을 연구하였다. Sn의 코팅량은 Sn/ZnS=0.02~0.07 범위에서 변화시켰으며, 코팅된 ZnS분말의 열처리는 450~90$0^{\circ}C$/2hr 범위에서 수행하였다. Sn/ZnS=0.035일 때 최적의 코팅이 이루어졌으며, 과도한 열처리는 ZnS에서 ZnO로 상전이가 발생하므로 500~$600^{\circ}C$ 정도가 안전한 조건임이 규명되었다. Sn량이 증가할수록 코팅된 ZnS의 형광강도는 감소하였으나 저전압 형광특성은 향상될 수 있는 가능성을 보여주었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.118-124
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• 2007

This paper presents the effects of the injected number and amplitude of impulse current on the service life of ZnO varistors for low voltages. To analyze the effects of lightning impulse currents on the performance of ZnO varistors, the measurements of resistive leakage current and power dissipation at the power frequency ac voltage before and after the injections of the $8/20[{\mu}s]$ impulse currents were made. As a consequence, the duration and amplitude of resistive leakage current flowing through ZnO varistor were increased with increasing the number of injections of the $8/20[{\mu}s]$ impulse currents. It is desirable that the service life of ZnO varistors should be evaluated as a function of the number and amplitude of lightning impulse current.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1471-1474
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• 1998

ZnO Varistor with composition of ZnO, $Bi_2O_3$, $Sb_2O_3$, CoO, NiO, $MnO_2$, $Cr_2O_3$, $Al_2O_3$ was fabricated by sintering methods. The purpose of this paper is to present certified voltage-current test data and a summary of electrical characteristics of the ZnO varistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.204.1-204.1
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• 2015

We studied the electrical properties and gate bias stress (GBS) stability of thin film transistors (TFTs) with multi-stacked InZnO layers. The InZnO TFTs were fabricated via solution process and the In:Zn molar ratio was 1:1. As the number of InZnO layers was increased, the mobility and the subthreshold swing (S.S) were improved, and the threshold voltage of TFT was reduced. The TFT with three-layered InZnO showed high mobility of $21.2cm^2/Vs$ and S.S of 0.54 V/decade compared the single-layered InZnO TFT with $4.6cm^2/Vs$ and 0.71 V/decade. The three-layered InZnO TFTs were relatively unstable under negative bias stress (NBS), but showed good stability under positive bias stress (PBS).

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.